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LB11961-W-AH

LB11961-W-AH

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    HSSOP14

  • 描述:

    IC MOTOR DRIVER

  • 数据手册
  • 价格&库存
LB11961-W-AH 数据手册
LB11961 Single-Phase Full-Wave Fan Motor Driver Overview The LB11961 is a single-phase bipolar drive motor driver that easily implements direct PWM motor drive systems with excellent efficiency. The LB11961 is optimal for fan motor drive in personal computer power supply systems and CPU cooling fan systems. www.onsemi.com Features • Single-phase full-wave drive (16V, 1.0A transistors are built in) • Built-in variable speed function controlled by a thermistor input The LB11961 can implement quiet, low-vibration variable speed control using externally clocked high side transistor direct PWM drive. • Built-in regenerative diode (Di); only requires a minimal number of external components. • Built-in HB • Minimum speed setting pin (allows full-speed mode operation at startup) • Operates in full-speed mode when the thermistor is removed. • Built-in lock protection and automatic recovery circuits • FG (speed detection) and RD (lock detection) outputs • Built-in thermal shutdown circuit HSSOP14 (225mil) XXXXXXXXXX YMDDD Applications • Personal computer power supply systems • CPU cooling fan systems XXXXX = Specific Device Code Y = Year M = Month DDD = Additional Traceability Data Specifications Absolute Maximum Ratings at Ta = 25C (Note1) Parameter VCC maximum output voltage Symbol Conditions Ratings Unit VCC max 18 V OUT pin maximum output current IOUT max 1.0 A OUT pin output voltage VOUT max 18 V HB maximum output current IHB max 10 mA VTH input pin voltage VTH max 6 V RD/FG output pin output voltage VRD/FG 18 V 10 mA max RD/FG output current IRD/FG Allowable power dissipation Pd max When mounted on a circuit board (Note2) ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. W 1.1 Operating temperature Topr -30 to +90 C Storage temperature Tstg -55 to +150 C 1. Stresses exceeding those listed in the Maximum Rating table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Specified circuit board : 114.3  76.1  1.6mm3, glass epoxy. © Semiconductor Components Industries, LLC, 2016 November 2016- Rev. 1 1 Publication Order Number: LB11961/D LB11961 Recommended Operating Conditions at Ta = 25C (Note3) Parameter Symbol Conditions Ratings Unit VCC supply voltage VCC 4.5 to 16 V VTH input level voltage range VTH 0 to 9 V Hall sensor input common-mode VICM 0.2 to 3 V input voltage range 3. Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Electrical Characteristics Unless otherwise specified Ta  25C, VCC = 12V (Note4) Ratings Parameter Symbol Conditions Unit min Circuit current 6VREG voltage ICC1 Drive mode ICC2 Lock protection mode V6VREG HB voltage VHB CPWM high-level voltage I6VREG = 5mA IHB = 5mA VCRH typ max 12 18 24 mA 8 11 16 mA V 5.8 6 6.2 1.10 1.25 1.40 V 3.45 3.6 3.75 V 1.95 2.05 2.15 18 25 32 CPWM low-level voltage VCRL CPWM oscillator frequency FPWM CT pin high-level voltage VCTH 3.45 3.6 3.75 V CT pin low-level voltage VCTL 1.55 1.7 1.85 V C = 100pF V kHz ICT charge current ICT1 1.5 2 2.5 A ICT discharge current ICT2 0.15 0.2 0.25 A ICT charge/discharge current RCT 8.5 10 11.5 ratio OUT output low saturation VOL IO = 200mA 0.2 0.3 V VOH IO = 200mA 0.9 1.1 V Zero peak value (including offset and 10 20 mV 0.2 0.3 V 30 A voltage OUT output high saturation voltage Hall sensor input sensitivity VHN hysteresis) RD/FG output pin low-level VRDL/FGL IRD/FG = 5mA IRDL/FGL VRD/FG = 7V voltage RD/FG output pin leakage current 4. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Pd max – Ta Allowable power dissipation, Pd max – W 1.2 Specified circuit board : 114.3×76.1×1.6mm3 glass epoxy board 1.1 1.0 0.8 0.6 0.53 0.4 0.2 0 – 30 – 10 10 30 50 70 90 110 Ambient temperature, Ta – °C www.onsemi.com 2 LB11961 Package Dimensions unit : mm HSSOP14 (225mil) CASE 944AA ISSUE A SOLDERING FOOTPRINT* 5.80 1.0 (Unit: mm) 0.32 0.65 NOTES: 1. The measurements are not to guarantee but for reference only. 2. Land pattern design in Fin area to be altered in response to customer’s individual application. www.onsemi.com 3 LB11961 Truth Table VTH IN- IN+ Low High Low (open) Low High High Low Low High - High Low - Low High High CPWM CT High Low Low - High OUT1 OUT2 FG High Low Low Low High Off Off Low Low Low Off Off High Off Low Off High Off RD Mode During rotation  drive (PWM off) On During rotation  regeneration (PWM on) Off Lock protection CPWM – High is the state where CPWM > VTH, and CPWM– Low is the state where CPWM < VTH. Open : The LB11961 operates in full-speed mode when the thermistor is removed. Pin Assignment F-GND (P-GND) F-GND (P-GND) OUT2 1 14 OUT1 VCC 2 13 S-GND RMI 3 12 CT VTH 4 11 6VREG CPWM 5 10 IN- FG 6 9 HB RD 7 8 IN+ LB11961 TOP VIEW F-GND (P-GND) : The motor system ground and the heat sink. Since the heat generated Since the heat generated by the chip is dissipated through F-GND, the thermal resistance is lowered by increasing the area of the copper foil and solder surface in the printed circuit pattern. S-GND : Control system ground www.onsemi.com 4 LB11961 Block Diagram FG RD Thermal protection circuit VCC Constant voltage 6VREG Delay circuit Control circuit 1.3V HB Hall OUT2 M IN Delay circuit OUT1 IN Amplifier with hysteresis Charge/discharge circuit S-GND CT VTH Oscillator circuit CPWM www.onsemi.com 5 P-GND LB11961 Application Circuit Example *2 CM VCC HB *7 IN H FG *3 IN 6VREG RD *6 *5 RMI *8 OUT1 VTH OUT2 CPWM CP = 100pF *4 CT F-GND *1 CT = 0.47F to 1F S-GND F-GND *1. Power supply and ground lines P-GND is connected to the motor power supply system and S-GND is connected to the control circuit power supply system. These two systems should be formed from separate lines and the control system external components should be connected to S-GND. *2. Regeneration power supply stabilization capacitor The capacitor CM provides power supply stabilization for both PWM drive and kickback absorption. A capacitor with a value of over 0.1µF is used for CM. A large capacitor must be used when the coil inductance is large or when the coil resistance is low. Since this IC adopts a technique in which switching is performed by the high side transistor and regeneration is handled by the low side transistor, the pattern connecting CM to VM and P-GND must be as wide and as short as possible. *3. Hall sensor input Lines that are as short as possible must be used to prevent noise from entering the system. The Hall sensor input circuit consists of a comparator with hysteresis (20mV). We recommend that the Hall sensor input level be at least three times this hysteresis, i.e. at least 60mVp-p. *4. PWM oscillator frequency setting capacitor If a value of 100pF is used for CP, the oscillator frequency will be f = 25kHz, and this will be the basic frequency of the PWM signal. *5. RD output This is an open collector output. It outputs a low level when the motor is turning and a high level when it is stopped. This pin must be left open if unused. www.onsemi.com 6 LB11961 *6. FG output This is an open collector output, and a rotation count detection function can be implemented using this FG output, which corresponds to the phase switching. This pin must be left open if unused. *7. HB pin This pin provides a Hall effect sensor bias constant-voltage output of 1.25V. *8. RMI pin Connect this pin to VTH if unused. Even if unused, the IC is set internally to operate at a 10% drive duty at the voltage corresponding to the lowest speed. (The capacitor is used to set up full-speed mode at startup.) Control Timing Chart (VCC  28%) THERMISTOR REMOVED Internal lowest speed setting voltage f = 25kHz (CP=100pF) High on duty 3.6V (VCC  30%) RMI voltage CPWM 2.0V (VCC  16%) Low on duty 0V Set minimum speed Full speed mode PWM control variable speed mode Low temperature High temperature 12V VCC 0V FG 1. Set minimum speed mode A VTH voltage level is generated when the thermistor detects the set temperature. At low temperatures, the fan motor turns at the lowest speed, which is set with the RMI pin. The LB11961 compares the CPWM oscillator voltage with the RMI pin voltage and sets the duty for the lowest drive state. 2. High speed  low speed mode The PWM signal is controlled by comparing the CPWM oscillation voltage that cycles between 1.2V and 3. 8V and the VTH voltage. When the VTH voltage is lower, the high and low side transistors are turned on, and when the VTH voltage is higher, the high side transistor is turned off and the coil current is regenerated through the low side transistor. Thus the output on duty increases as the VTH voltage becomes lower, the coil current increases, and the motor speed increases. Rotation speed feedback is provided by the FG output. 3. Full-speed mode The LB11961 switches to full-speed mode above a certain temperature. 4. Thermistor removed mode If the thermistor is removed, the VTH input voltage will rise. However, the output will go to full drive at 100% and the motor will run at full speed. www.onsemi.com 7 LB11961 ORDERING INFORMATION Device LB11961-MPB-H Package Wire Bond Shipping(Qty/Packing) HSSOP14(225mil) Au-wire 70 / Fan-fold Au-wire 2000 / Tape & Reel Cu-wire 2000 / Tape & Reel (Pb-Free / Halogen Free) LB11961-TLM-H HSSOP14(225mil) (Pb-Free / Halogen Free) LB11961-W-AH HSSOP14(225mil) (Pb-Free / Halogen Free) † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. www.onsemi.com 8
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