LB1948MCGEVB

LB1948MC Motor Driver, Forward/Reverse, Low Saturation Voltage Drive, 12V Overview The LB1948MC is a two-channel low saturation voltage forward/reverse motor driver IC. It is optimal for motor drive in 12V system products and can drive either two DC motors, one DC motor using parallel connection, or a two-phase bipolar stepping motor with 1-2 phase excitation mode drive. Features • Supports 12V power supply systems • Low saturation voltage: VO(sat) = 0.5V (typical) at IO = 400mA • Zero current drawn in standby mode • Braking function • Supports parallel connection: IO max = 1.6A, VO(sat) = 0.6V (typical) at IO = 800mA • Built-in spark killer diode • Built-in thermal shutdown circuit • Miniature package: MFP10SK (6.4mm  5.0mm) www.onsemi.com MFP10SK (225mil) GENERIC MARKING DIAGRAM* Typical Applications • Refrigerator • Thermal printers • POS terminal • Hot-water supplies • Time Recorder XXXXXXXX YMDDD XXXX Y M DDD = Specific Device Code = Year = Month = Additional Traceability Data ORDERING INFORMATION Ordering Code: LB1948MC-AH (MSL3) LB1948MC-BH (MSL1) Package MFP10SK (Pb-Free / Halogen Free) Shipping (Qty / packing) 1000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF © Semiconductor Components Industries, LLC, 2016 August 2016- Rev. 1 1 Publication Order Number: LB1948MC/D LB1948MC Specifications Absolute Maximum Ratings at Ta = 25C (Note 1) Parameter Symbol Conditions Ratings Unit Maximum supply voltage VCC max -0.3 to +20 V Output voltage VOUT -0.3 to +20 V Input voltage VIN Ground pin source current IGND Per channel -0.3 to +18 800 mA Allowable power dissipation Pd max Mounted on a specified board (Note 2) 870 mW Operating temperature Topr -20 to +85 V C Storage temperature Tstg -40 to +150 C 1. Stresses exceeding those listed in the Maximum Rating table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2. Specified board: 114.3mm x 76.1mm x 1.6mm, glass epoxy board Recommendation Operating Condition at Ta = 25C (Note 3) Parameter Supply voltage Symbol Conditions Ratings VCC Unit 2.5 to 16 V Input high-level voltage VIH 1.8 to 10 V Input low-level voltage VIL -0.3 to +0.7 V 3. Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Electrical Characteristics at Ta  25C, VCC = 12V (Note 4) Ratings Parameter Symbol Conditions Unit min Current drain Output saturation voltage Input current typ max ICC0 IN1, 2, 3, 4 = 0V (Standby mode) 0.1 10 A ICC1 (Note 5) (Forward or reverse mode) 15 21 mA mA ICC2 (Note 6) (Brake mode) 30 40 VO(sat)1 IOUT = 200mA (High Side and Low Side) 0.25 0.35 VO(sat)2 IOUT = 400mA (High Side and Low Side) 0.50 0.75 V IIN VIN = 5V 85 110 A 30 A 1.7 V V Spark Killer Diode Reverse current IS(leak) Forward voltage VSF IOUT = 400mA 4. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. IN1/IN2/IN3/IN4=H/L/L/L or L/H/L/L or L/L/H/L or L/L/L/H. 6. IN1/IN2/IN3/IN4=H/H/L/L or L/L/H/H. www.onsemi.com 2 LB1948MC Package Dimensions unit : mm MFP10SK (225 mil) CASE 751DA ISSUE A SOLDERING FOOTPRINT* 5.60 1.0 (Unit: mm) 0.47 1.0 NOTE: The measurements are not to guarantee but for reference only. www.onsemi.com 3 LB1948MC Pdmax-Ta diagram Pd max -- Ta Allowable power dissipation, Pd max -- W 1.0 Specified board: 114.3×76.1×1.6mm3 glass epoxy board. 0.87 0.8 0.6 0.45 0.4 0.2 0 -20 0 20 40 60 80 85 Ambient temperature, Ta -- C Pin Assignment VCC 1 10 OUT1 IN1 2 9 OUT2 IN2 3 LB1948MC 8 OUT3 IN3 4 7 OUT4 IN4 5 6 GND Top view www.onsemi.com 4 100 LB1948MC Truth Table Input Output Notes IN1 IN2 IN3 IN4 OUT1 OUT2 OUT3 OUT4 L L L L OFF OFF OFF OFF L L OFF OFF H L H L Standby mode Standby mode Forward 1CH L H L H H H L L L Reverse Brake L OFF OFF Standby mode H L H L L H L H Reverse H H L L Brake Forward 2CH Block Diagram 10μF VCC 60kΩ OUT1 80kΩ IN1 M IN3 60kΩ 80kΩ 60kΩ 80kΩ IN4 Thermal shutdown circuit 60kΩ 80kΩ IN2 Control block OUT2 OUT3 M OUT4 GND www.onsemi.com 5 LB1948MC Design Documentation (1) Voltage magnitude relationship There are no restrictions on the magnitude relationships between the voltages applied to VCC and IN1 to IN4. (2) Parallel connection The LB1948MC can be used as a single-channel H-bridge power supply by connecting IN1 to IN3, IN2 to IN4, OUT1 to OUT3, and OUT2 to OUT4 as shown in the figure. (IOmax = 1.6A, VO(sat) = 0.6V (typical) at IO = 800mA) 1 VCC OUT1 10 2 IN1 OUT2 9 M 3 IN2 LB1948MC OUT3 8 4 IN3 OUT4 7 5 IN4 GND 6 (3) Observe the following points when designing the printed circuit board pattern layout.  Make the VCC and ground lines as wide and as short as possible to lower the wiring inductance.  Insert bypass capacitors between VCC and ground mounted as close as possible to the IC.  Resistors of about 10K must be inserted between the CPU output ports and the IN1 to IN4 pins if the microcontroller and the LB1948MC are mounted on different printed circuit boards and the ground potentials differ significantly. (4) Penetration electric current At the time of the next mode shift, a penetration electric current is generated in VCC-GND. There are not the deterioration of the IC by), the destruction as follows 1Atyp per this penetration electric current (1ch, 1μs; but for the stabilization of the power supply line of the IC is most recent, and, please can enter with a condenser. (i) Forward (Reverse) ↔ Brake (ii) Forward ↔ Reverse (iii) Standby → Brake In addition, the penetration electric current disappears when I put a wait mode of 10μs at the time of the change of the Forward ↔ Reverse. (5) Supplementary matter of the penetration electric current According to (4), a penetration electric current cannot influence IC life. LB1948MC Thermal shutdown reference chart 14 VCC = 12V 100 C 12 Output voltage, VO -- V Thermal Shutdown Temperature (1) Thermal shutdown temperature The thermal shutdown temperature Ttsd is 200  20C with fluctuations. (2) Thermal shutdown operation The operation of the thermal shutdown circuit is shown in the figure below. When the chip temperature Tj is in the direction of increasing (solid line), the output turns off at approximately 200C. When the chip temperature Tj is in the direction of decreasing (dotted line), the output turns on (returns) at approximately 125C. 220 C Return 10 TSD operation 8 6 4 2 220 C 0 100 120 140 160 100 C 180 Chip temperature, Tj -- C www.onsemi.com 6 200 220 LB1948MC Thermal Shutdown Circuit Block Diagram Reference voltage circuit Thermal shutdown circuit Drive circuit Vref Function equivalent circuit Note: The above is an example of thermal shutdown circuits although there are some differences from the actual internal circuit. Thermal Shutdown Operation The thermal shutdown circuit compares the voltage of the heat sensitive element (diode) with the reference voltage and shuts off the drive circuit at a certain temperature to protect the IC chip from overheating. ICC -- VCC 40 IIN -- VIN 400 VIN = 5V VCC = 12V 30 Input current, IIN -- μA Current drain, ICC -- mA (= IN1 / IN2 or IN3 / IN4) H/H 20 H / L, L /H 10 0 300 5 10 15 IN 100 L/L 0 0 20 0 5 Supply voltage, VCC -- V (IN1 e 0.3 nd h ig 0.2 H w Lo 20 VCC = 12V 0.5 0.4 15 ICC -- Ta 40 VCC = 12V Current drain, ICC -- mA Output saturation voltage, VO(sat) -- V 10 Input voltage, VIN -- V VO(sat) -- IO 0.6 4 1~ 200 sid a de si 30 / 2) H /H 20 H / L, L /H 10 0.1 0 0 100 200 300 400 500 600 0 -40 -20 0 20 40 60 80 100 Ambient temperature, Ta -- °C Output current, IO -- mA www.onsemi.com 7 120 140 LB1948MC Output saturation voltage, VO(sat) -- V 0.7 0.6 VO(sat) -- Ta VCC = 12V High side and Low side 00mA 0.5 IO= 4 0.4 300mA 0.3 200mA 0.2 100mA 0.1 0 -40 -20 0 20 40 60 80 100 120 140 Ambient temperature, Ta -- °C ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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