LC06511D01MXTAG

LC06511D01MXTAG

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    XFDFN6

  • 描述:

  • 数据手册
  • 价格&库存
LC06511D01MXTAG 数据手册
Battery Protection IC, OTP Function, 1-Cell Lithium-Ion Battery LC06511DMX, LC06511FMX, LC06514DMX www.onsemi.com Overview LC06511DMX/LC06511FMX/LC06514DMX is a protection IC for 1 cell lithium−ion or lithium−polymer battery with built−in OTP. It provides highly accurate adjustable over−charge, over−discharge, over−current protection with adjustable detection delay by OTP. Current is detected by high precision external chip resistor. Which realizes accurate current detection over temperature. 1 X2DFN6 1.4x1.4, 0.5P CASE 716AF Function • Highly Accurate Detection Voltage/Current at Ta = 25°C, • • • • • • • • • • • • • VCC = 3.8 V Over Charge Detection Voltage ♦ 4.1 V to 4.55 V (5 mV Step) Over Charge Release Hysteresis ♦ 0 V to 0.2 V (0 V, 0.1 V, 0.15 V, 0.2 V) Over Discharge Detection Voltage ♦ 2.0 V to 3.3 V (50 mV Step) Over Discharge Release Hysteresis2 ♦ 0 V, 0.2 V, 0.3 V, 0.4 V Discharge Over Current Detection Voltage1 ♦ 3 mV to 70 mV (1 mV Step) Discharge Over Current Detection Voltage2 ♦ 3 mV to 70 mV (1 mV Step) Short Current Detection Voltage ♦ 50 mV to 150 mV (10 mV Step): LC06511DMX, LC06514DMX ♦ 30 mV to 70 mV (5 mV Step): LC06511FMX Charge Over Current Detection Voltage ♦ −70 mV to −3 mV (−1 mV Step) Over−discharge Detection Delay Time ♦ 32 ms, 64 ms, 128 ms, 256 ms Discharge Over−current Detection Delay Time1 ♦ 8 ms, 16 ms, 2048 ms, 3482 ms 0 V Battery Charging ♦ “Permit” (LC06511DMX, LC06511FMX) ♦ “Inhibit” (LC06514DMX) Auto Wake−up Function Battery Charging “Permit” This is a Pb−Free Device MARKING DIAGRAM XXMG G XX = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† LC06511D01MXTAG X2DFN6 (Pb−Free) 4000 / Tape & Reel LC06511D02MXTAG X2DFN6 (Pb−Free) 4000 / Tape & Reel LC06511D04MXTAG X2DFN6 (Pb−Free) 4000 / Tape & Reel LC06511F03MXTAG X2DFN6 (Pb−Free) 4000 / Tape & Reel LC06514D01MXTAG X2DFN6 (Pb−Free) 4000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Typical Applications • Smart Phone • Tablet • Wearable Device © Semiconductor Components Industries, LLC, 2018 September, 2020 − Rev. 8 1 Publication Order Number: LC06511DMX/D LC06511DMX, LC06511FMX, LC06514DMX Table 1. ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply voltage VCC −0.3 to 12.0 V CS terminal Input voltage VCS −0.3 to 7 V VM terminal Input voltage VVM VCC−24.0 to VCC+0.3 V CO terminal voltage VCO VCC−24.0 to VCC+0.3 V DO terminal voltage VDO VCC−0.3 to VCC+0.3 V Storage temperature Tstg −55 to +125 _C Operating ambient temperature Topr −40 to +85 _C Junction temperature Tj 125 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. EXAMPLE OF APPLICATION CIRCUIT Battery+ PAC+ R1 Controller IC VCC Over current detection C1 OTP VSS CS DO VM CO R2 R3 Battery− PAC− Sense Resistor External FETs Figure 1. Example of Application Circuit Table 2. Components Min Recommended Value Max Unit R1 0.1 0.33 1 kW Battery+ is filtered to VCC by R1 and C1 Description R2 0.1 1 2 kW Protection from reverse connection of charger C1 0.01 0.1 1.0 mF Battery+ is filtered to VCC by R1 and C1 R3 1 20 mW Sence resistor for over−current detection www.onsemi.com 2 LC06511DMX, LC06511FMX, LC06514DMX Table 3. ELECTRICAL CHARACTERISTICS (R1 = 0.33 kW, R2 = 1 kW, VCC = 3.8 V (Note 1)) Parameter Symbol Conditions Min. Typ. Max. Unit Test Circuit mV B mV B mV I mV B mV B mV D mV F mV F mV F V A mV F V A 1.4 V A 1.15 1.4 V A 3 6 mA J 0.95 mA J Detection Voltage Over−charge Detection Voltage Over−charge Release Voltage Vov Vovr1 Vovr2 Over−discharge Detection Voltage Vuv Over−discharge Release Voltage1 Vuvr1 Over−discharge Release Voltage2 Vuvr2 Discharge Over−current Detection Voltage (Primary Protection) Vdoc1 Discharge Over−current Detection Voltage2 (Secondary Protection) Vdoc2 Discharge Over−current Detection Voltage (Short circuit) Vshrt Dicharge Over−current (Short Circuit) Release Voltage Vdocr Charge Over−current Detection Voltage Vcoc Charge Over−current Release Voltage Vcocr R1 = 0.33 kΩ R1 = 0.33 kΩ VM < Vcocr & CS = 0 V R1=0.33 kΩ VM > Vcocr & CS = 0 V R1 = 0.33 kΩ R1 = 0.33 kΩ VM = 0 V R1 = 0.33 kΩ VM = OPEN R2 = 1 kΩ VCC = 3.8 V R2 = 1 kΩ VCC = 3.8 V R2 = 1 kΩ VCC = 3.8 V R2 = 1 kΩ VCC = 3.8 V  CS = 0 V R2 = 1 kΩ VCC = 3.8 V R2 = 1 kΩ VCC = 3.8 V CS = 0 V Ta = 25°C Vov_set −10 Vov_set Vov_set +10 Ta = −20 to 60°C Vov_set −15 Vov_set Vov_set +15 Ta = 25°C Vovr_set −30 Vovr_set Vovr_set +30 Ta = −20 to 60°C Vovr_set −55 Vovr_set Vovr_set +40 Ta = 25°C Vov_set −15 Vov_set Vov_set +10 Ta = −20 to 60°C Vov_set −20 Vov_set Vov_set +15 Ta = 25°C Vuv_set −35 Vuv_set Vuv_set +35 Ta = −20 to 60°C Vuv_set −55 Vuv_set Vuv_set +55 Ta = 25°C Vuv_set – 35 Vuv_set Vuv_set + 50 Ta = −20 to 60°C Vuv_set – 55 Vuv_set Vuv_set + 80 Ta = 25°C Vuvr_set −100 Vuvr_set Vuvr_set +100 Ta = −20 to 60°C Vuvr_set −110 Vuvr_set Vuvr_set +110 Ta = 25°C Vdoc1_set−1.0 Vdoc1_set Vdoc1_set+1.0 Ta = −20 to 60°C Vdoc1_set−1.8 Vdoc1_set Vdoc1_set+1.8 Ta = 25°C Vdoc2_set−1.0 Vdoc2_set Vdoc2_set+1.0 Ta = −20 to 60°C Vdoc2_set−1.8 Vdoc2_set Vdoc2_set+1.8 Ta = 25°C Vshrt_set−10 Vshrt_set Vshrt_set+10 Ta = −20 to 60°C Vshrt_set−12 Vshrt_set Vshrt_set+12 Ta = 25°C VCC−1.1 VCC−0.65 VCC−0.2 Ta = −20 to 60°C VCC−1.2 VCC−0.65 VCC−0.1 Ta = 25°C Vcoc_set−1.0 Vcoc_set Vcoc_set+1.0 Ta = −20 to 60°C Vcoc_set−1.8 Vcoc_set Vcoc_set+1.8 Ta = 25°C 0.08 0.2 0.32 Ta = −20 to 60°C 0.05 0.2 0.35 Input Voltage 0 V Battery Charge Permission Charger Voltage (LC06511DMX/LC06511FMX) Vchg VCC − VM VCC = VSS =0V Ta = 25_C 0 V Battery Charging Inhibition Battery Voltage (LC06514DMX) Vinh VM = −4 V Ta = 25_C Operating Current Icc At normal state Ta = 25_C VCC = 3.8 V Stand−by Current Istb At stand−by State Ta = 25_C VCC = 2.0 V 0.9 Current Consumption Auto wake−up = enable www.onsemi.com 3 LC06511DMX, LC06511FMX, LC06514DMX Table 3. ELECTRICAL CHARACTERISTICS (R1 = 0.33 kW, R2 = 1 kW, VCC = 3.8 V (Note 1)) Parameter Symbol Conditions Min. Typ. Max. Unit Test Circuit Resistance Internal Resistance (VCC−VM) Rvmu VCC = 2.0 V VM = 0 V Ta = 25_C 150 300 600 kΩ E Internal Resistance (VSS−VM) Rvmd VCC = 3.8 V VM = 0.1 V Ta = 25_C 5 10 20 kΩ E CO Output Resistance (High) Rcoh VCC = 3.8 V CO = 3.3 V CS = 0 V Ta = 25_C 6 12 24 kΩ H CO Output Resistance (Low) Rcol VCC = 4.5 V CO = 0.5 V CS = 0 V Ta = 25_C 0.5 0.7 2.0 kΩ H DO Output Resistance (High) Rdoh VCC = 3.8 V DO = 3.3 V CS = 0 V Ta = 25_C 0.5 1.0 2.0 kΩ G DO Output Resistance (Low) Rdol VCC = 2.0 V CS = 0 V DO = 0.5 V Ta = 25_C 0.2 0.3 0.8 kΩ G Over−charge Detection Delay Time Tov VCC = 3 V to 4.6 V VM = CS = 0V Ta = 25_C 819 1024 1229 ms B Ta = −20 to 60_C 717 1024 1331 Over−charge Release Delay Time Tovr VCC = 4.6 V to 3 V VM = CS = 0V Ta = 25_C 12.8 16 19.2 ms B Ta = −20 to 60_C 11.2 16 20.8 Over−discharge Detection Delay Time Tuv VCC=3.5 V to 1.8 V VM = CS = 0V Ta = 25_C Tuv_set*0.8 Tuv_set Tuv_set*1.2 ms B Ta = −20 to 60_C Tuv_set*0.65 Tuv_set Tuv_set*1.35 Over−discharge Release Delay Time Tuvr VCC = 1.8 V to 3.5 V VM = CS = 0V Ta = 25_C 0.84 1.05 1.26 ms B Ta = −20 to 60_C 0.68 1.05 1.42 Discharge Over−current Detection Delay Time 1 Tdoc1 ms F Discharge Over−current Detection Delay Time 2 Tdoc2 ms F Discharge Over−current Release Delay Time Tdocr ms A Short−current Detection Delay Time Tshrt ms F Charge Over−current Detection Delay Time Tcoc ms F Charge Over−current Release Delay Time Tcocr ms F Detection and Release Delay Time CS = 0 V to Vdoc1MAX VM = 0 V VM = 0 V to Vdoc2MAX VM = 0 V VM = 3.8 V to 2.65 V CS = 0 V CS = 0 V to VshrtMAX VM = 0 CS = 0 V to VcocMIN VM = 0 VM = 0 V to VcocrMAX CS = 0 V Ta = 25_C Tdoc1_set*0.8 Tdoc1_set Tdoc1_set*1.2 Ta = −20 to 60_C Tdoc1_set*0.7 Tdoc1_set Tdoc1_set*1.3 Ta = 25_C 12.8 16 19.2 Ta = −20 to 60_C 11.2 16 20.8 Ta = 25_C 3.2 4 4.8 Ta = −20 to 60_C 2.8 4 5.2 Ta = 25_C 175 250 325 Ta = −20 to 60_C 150 250 350 Ta = 25_C 12.8 16 19.2 Ta = −20 to 60_C 11.2 16 20.8 Ta = 25_C 3.2 4 4.8 Ta = −20 to 60_C 2.8 4 5.2 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. The specifications in high temperature and low temperature are guaranteed by design. www.onsemi.com 4 LC06511DMX, LC06511FMX, LC06514DMX TEST CIRCUITS A R1 R2 F R1 VCC VM DO R2 VCC DO VM V CS V CS CO V B R1 R2 G VCC VM R1 DO R2 V CS CO DO VM A CO VSS C R2 VCC CS VSS R1 CO VSS VSS H R1 VCC VM CS DO R2 VCC DO VM CS CO VSS CO A VSS D I R1 R1 VCC VM CS DO R2 V VCC VM CS CO DO CO VSS VSS E J R1 R2 A VM CS V R1 VCC DO A R2 VCC VM CS CO VSS VSS Figure 2. Test Circuits www.onsemi.com 5 DO CO LC06511DMX, LC06511FMX, LC06514DMX Table 4. ADJUSTABLE PARAMETERS Parameter Unit Range Typical Value Setting Guide Vov mV 4100 ~ 4550 5 mV step Vovr mV Vov−Vovr_Hy Vovr_Hy: 0,100,150,200 (4 steps) Vuv mV 2000 ~ 3300 50 mV step Vuvr2 mV Vuv+Vuvr2_Hy Vdoc1 mV 3 ~ 70 1 mV step Vdoc2 mV 3 ~ 70 1 mV step Vshrt mV 50 ~ 150 10 mV step (LC06511DMX/LC06514DMX) 30 ~ 70 5 mV step (LC06511FMX) −70 ~ −3 1 mV step Vcoc mV Parameter Unit Tuv ms 32, 64, 128, 256 Tdoc1 ms 8, 16, 2048, 3482 Vuvr2_Hy: 0, 200, 300, 400 (4 steps) Typical Value Setting Guide Table 5. SELECTION GUIDE Device Vov (mV) Vovr (mV) Vuv (mV) Vuvr2 (mV) Vdoc1 (mV) Vdoc2 (mV) Vshrt (mV) Vcoc (mV) Tuv (ms) Tdoc1 (ms) Specific Device Code LC06511D01MXTAG 4475 4275 2600 2800 40 − 150 −30 32 16 LE LC06511D02MXTAG 4225 4125 2500 2700 18 25 60 −12 32 16 LG LC06511D04MXTAG 4430 4230 2800 3000 24 − 50 −12 32 8 LJ LC06511F03MXTAG 4500 4350 2100 2300 10.5 15 40 −18 64 3482 LK LC06514D01MXTAG 4550 4400 2600 2800 35 40 120 −40 32 3482 LF www.onsemi.com 6 LC06511DMX, LC06511FMX, LC06514DMX Table 6. PIN FUNCTION Pin No. Symbol Pin Function 1 VM Charger negative voltage input terminal 2 CO Charge FET control terminal 3 DO Discharge FET control terminal 4 VSS VSS terminal 5 VCC VCC terminal 6 CS Over−current detection input terminal BLOCK DIAGRAM VCC 5 OSC Power Control Level Shifter Control Circuit Rvmu 1 Over−discharge Detector Short current Detector Rvmd 1.2V Discharge Over−current Detector 1 Over− charge Detector Disharge Over−current Detector 2 Comp for Vdocr Charge Over−current Detector OTP 4 Comp for Vcocr 3 6 VSS CS Figure 3. Block Diagram www.onsemi.com 7 DO 2 CO VM LC06511DMX, LC06511FMX, LC06514DMX DESCRIPTION OF OPERATION • The battery voltage is detected between VCC pin and VSS pin and the battery current is detected between VSS pin and CS pin. • • • • • • • • 1. Normal state “VCC voltage” is between “over−discharge detection voltage (Vuv)”, “over−charge detection voltage (Vov)”, and “CS voltage” is between “charge over−current detection voltage (Vcoc)”, “discharge over−current detection voltage (Vdoc)”, and “VM voltage” is lower than “dicharge over−current (short) release voltage (Vdocr)”. This is the normal state. Both CO and DO are high level output. Charge and discharge is allowed. • 2. Over−charging state “VCC voltage” is higher than or equal to “over−charge detection voltage (Vov)” for longer than “over−charge detection delay time (Tov)”. This is the over−charging state, CO is low level output. Charge is prohibited. Release from over−charging state 1 “VM voltage” is lower than “charge over−current (short) release voltage (Vcocr)”. Then “VCC voltage” is lower than “over−charge release voltage (Vovr)” for longer than “over−charging release delay time (Tovr)”. Release from over−charging state 2 “VM voltage” is higher than “charge over−current (short) release voltage (Vcocr)”. Then “VCC voltage” is lower than “over−charge detection voltage (Vov) for longer than “over−charge release delay time (Tovr)”. • over−current detection voltage (Vdoc1)” for longer than “discharge over−current detection delay time (Tdoc1)”. DO is low level output. Discharge is prohibited. Discharge over−current detection 2 CS terminal is higher than or equal to “discharge over−current detection voltage2 (Vdoc2)” for longer than “discharge over−current detection delay time 2 (Tdoc2)”. DO is low level output. Discharge is prohibited. Discharge over−current detection (Short circuit) CS terminal is higher than or equal to “discharge over−current detection voltage (Short circuit) (Vshrt)” for longer than “short−current detection delay time (Tshrt)”. DO is low level output. Dischaege is prohibited. During discharging over−current state, VM pin is pulled down to Vss by internal resistor (Rvmd). Release from discharging over−current state “CS voltage” goes lower than “discharge over−current detection voltage (Vdoc1)” and VM voltage goes lower than “discharge over−current (short) release voltage (Vdocr)” for longer than “discharge over−current release delay time (Tdocr)”. 5. Charging over−current state • “CS voltage” goes lower than or equal to “charge • 3. Over−discharging state “VCC voltage” is lower than “over−discharge detection voltage (Vuv)” for longer than “over−discharge delay time (Tuv)”. This is the over−discharging state, DO is low level output. Discharge is prohibited. During over−discharging state, VM pin is pulled up to Vcc by internal resistor (Rvmu) and circuits are shut down. The low power consumption is kept. Release from Over−discharging state 1 Charger is connected, then “VCC voltage” goes higher than “over−discharge release voltage1 (Vuvr1)” for longer than “over−charge release delay time (Tuvr)”. Release from over−discharging state (with auto wake−up feature) 2 “VCC voltage” is higher than “over−discharge release voltage2 (Vuvr1)” without charger for longer than “over−charge release delay time (Tovr)”. • • 4. Discharging over−current state • Discharge over−current detection 1 over−current detection voltage (Vcoc) for longer than “charge over−current detection delay time (Tcoc)”. This is the charging over−current state, CO is low level output. Charge is prohibited. Release from charging over−current state “CS voltage” goes higher than “charge over−current detection voltage (Vcoc)” and “VM voltage” goes higher than “charge over−current release voltage (Vcocr)” for longer than “charge over−current release delay time (Tcocr)”. 6. 0 V battery charging (LC06511DMX/LC06511FMX) When the Battery voltage is lower than or equal to “0V battery charge permission voltage (Vchg)”, charge is allowed if charger voltage is higher than or equal “0V battery charge permission voltage (Vchg)”. CO is fixed by the “VCC voltage”. 7. 0 V Battery Protection Function (LC06514DMX) This function protects the battery when a short circuit in the battery (0 V battery) is detected, at which point charging will be prohibited. When the voltage of a battery is below “0 V battery charging inhibition battery voltage (Vinh)”, CO is low level output. Charge is prohibited. CS terminal is higher than or equal to “discharge www.onsemi.com 8 LC06511DMX, LC06511FMX, LC06514DMX TIMING CHARTS Over Charge Voltage and Charge Over Current Charger Load Charger connection connection connection Load connection Charger connection Load connection VCC Vov Vovr t CS Vshrt Vdoc2 Vdoc1 VSS Vcoc t VM VCC Vcocr VSS t CO VCC Tov Tovr Tov Tcoc Tcocr Tovr VM t Icharge t 0 Idischarge Figure 4. Over Charge Voltage and Charge Over Current www.onsemi.com 9 LC06511DMX, LC06511FMX, LC06514DMX Over Discharge Detection and Release (with/without Charger) Load connection Load connection Charger connection VCC Vuvr2 Vuvr1 Vuv t CS Vshrt Vdoc2 Vdoc1 VSS Vcoc t VM VCC VSS t DO VCC Tuv Tuvr Tuv VSS Tuvr t Icharge t 0 Idischarge Figure 5. Over Discharge Detection and Release (with/without Charger) www.onsemi.com 10 LC06511DMX, LC06511FMX, LC06514DMX Discharge Over Current and Short Current Detection and Release VCC Load connection Charger connection Load connection Charger connection Short circuit Charger connection t CS Vshrt Vdoc2 Vdoc1 VSS Vcoc t VM VCC VSS t DO VCC Tdoc1 Tdoc2 Tshrt Tdocr Tdocr Tdocr VSS t Icharge t 0 Idischarge Figure 6. Discharge Over Current and Short Current Detection and Release www.onsemi.com 11 LC06511DMX, LC06511FMX, LC06514DMX CHARACTERISTICS OF LC06511D01MX (TYPICAL DATA) (1) Current Consumption and Protection Detection Voltage Icc Vov 7 4490 6 4485 Vov [mV] Icc [uA] 5 4 3 2 4475 4470 4465 1 0 4480 −20 0 20 40 4460 60 −20 0 Temp [5C] Vuv VDOC1 [mV] Vuv [mV] 40 60 40 60 41.0 2620 2610 2600 2590 2580 40.5 40.0 39.5 39.0 2570 −20 0 20 40 38.5 60 −20 0 Temp [5C] 20 Temp [5C] Vshrt Vcoc 165 −28.5 160 −29.0 155 −29.5 Vcoc [mV] Vshrt [mV] 60 41.5 2630 150 145 140 135 40 VDOC1 2640 2560 20 Temp [5C] −30.0 −30.5 −31.0 −20 0 20 40 −31.5 60 −20 Temp [5C] 0 20 Temp [5C] Figure 7. Current Consumption and Protection Detection Voltage www.onsemi.com 12 LC06511DMX, LC06511FMX, LC06514DMX (2) Protection Detection Delay Time 1500 1400 1300 1200 1100 1000 900 800 700 600 Tuv 40 38 36 Tuv [ms] Tov [ms] Tov 34 32 30 28 26 −20 0 20 40 24 60 −20 0 Temp [5C] Tdoc1 Tshrt [us] Tdoc1 [ms] 40 60 300 18 17 16 15 14 250 200 150 13 −20 0 20 40 100 60 −20 0 Temp [5C] −20 0 20 20 Temp [5C] Tcoc Tcoc [ms] 60 350 19 20 19 18 17 16 15 14 13 12 11 10 40 Tshrt 20 12 20 Temp [5C] 40 60 Temp [5C] Figure 8. Protection Detection Delay Time www.onsemi.com 13 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS X2DFN6 1.4x1.4, 0.5P CASE 716AF ISSUE A 1 SCALE 4:1 DATE 11 MAY 2018 A B D A1 ÉÉ ÉÉ PIN ONE REFERENCE A3 E PLATED SURFACE TOP VIEW DETAIL B DETAIL B A 0.10 C 0.05 C NOTE 4 D2 DETAIL A 6X 1 K SEATING PLANE C SIDE VIEW 6 4 e BOTTOM VIEW E2 6X MILLIMETERS MIN NOM MAX 0.30 0.35 0.40 −−− −−− 0.05 0.127 REF 0.15 0.20 0.25 1.30 1.40 1.50 0.86 0.96 1.06 1.40 1.30 1.50 0.10 0.20 0.30 0.50 BSC 0.25 REF 0.30 0.35 0.40 XXMG G XX = Specific Device Code M = Month Code G = Pb−Free Package b 0.10 M C A B (Note: Microdot may be in either location) NOTE 3 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. RECOMMENDED SOLDERING FOOTPRINT* 6X 1.16 DIM A A1 A3 b D D2 E E2 e K L GENERIC MARKING DIAGRAM* L 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.10 AND 0.20 mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 0.50 1.70 0.20 1 0.50 PITCH 6X 0.20 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON79890G X2DFN6 1.4x1.4, 0.5P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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