M1MA141KT1G,
M1MA142KT1G
Single Silicon Switching
Diode
This Silicon Epitaxial Planar Diode is designed for use in ultra high
speed switching applications. This device is housed in the SC--70
package which is designed for low power surface mount applications.
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CATHODE
3
Features
Fast trr, < 3.0 ns
Low CD, < 2.0 pF
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
ANODE NO CONNECTION
1
2
MAXIMUM RATINGS (TA = 25C)
Rating
Reverse Voltage
Symbol
M1MA141KT1
M1MA142KT1
Peak Reverse Voltage
M1MA141KT1
M1MA142KT1
Forward Current
Peak Forward Current
Peak Forward Surge Current
VR
VRM
Value
Unit
Vdc
40
80
Vdc
40
80
IF
100
mAdc
IFM
225
mAdc
IFSM
(Note 1)
500
mAdc
3
1
2
MARKING DIAGRAM
Mx M G
G
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Power Dissipation
Rating
PD
150
mW
Junction Temperature
TJ
150
C
Storage Temperature
Tstg
-- 55 ~ + 150
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 sec
SC--70 (SOT--323)
CASE 419
STYLE 2
Mx = Device Code
x = H for 141
I for 142
M = Date Code*
G
= Pb--Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Package
Shipping†
M1MA141KT1G
SC--70
(Pb--Free)
3000/Tape & Reel
M1MA142KT1G
SC--70
(Pb--Free)
3000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010
October, 2010 -- Rev. 7
1
Publication Order Number:
M1MA141KT1/D
M1MA141KT1G, M1MA142KT1G
ELECTRICAL CHARACTERISTICS (TA = 25C)
Condition
Characteristic
Reverse Voltage Leakage Current
M1MA141KT1
M1MA142KT1
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time (Figure 1)
M1MA141KT1
M1MA142KT1
Symbol
Min
Max
Unit
IR
--
0.1
mAdc
IF = 100 mA
VF
--
1.2
Vdc
IR = 100 mA
VR
--
Vdc
VR = 0, f = 1.0 MHz
CD
--
2.0
pF
IF = 10 mA, VR = 6.0 V,
RL = 100 Ω, Irr = 0.1 IR
trr
(Note 2)
--
3.0
ns
VR = 35 V
VR = 75 V
2. trr Test Circuit
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2
40
80
M1MA141KT1G, M1MA142KT1G
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
tr
OUTPUT PULSE
tp
trr
t
t
10%
RL
A
IF
Irr = 0.1 IR
90%
VR
IF = 10 mA
VR = 6 V
RL = 100 Ω
tp = 2 ms
tr = 0.35 ns
Figure 1. Recovery Time Equivalent Test Circuit
10
IR , REVERSE CURRENT (A)
TA = 85C
10
TA = -- 40C
1.0
0.1
TA = 25C
0.2
0.4
0.6
0.8
1.0
VF, FORWARD VOLTAGE (VOLTS)
TA = 125C
1.0
TA = 85C
0.1
TA = 55C
0.01
0.001
1.2
TA = 150C
TA = 25C
10
0
Figure 2. Forward Voltage
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Reverse Current
0.68
CD, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
100
0.64
0.6
0.56
0.52
0
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Diode Capacitance
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3
8
50
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419
ISSUE R
DATE 11 OCT 2022
SCALE 4:1
GENERIC
MARKING DIAGRAM
XX MG
G
1
XX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1:
CANCELLED
STYLE 6:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
DOCUMENT NUMBER:
DESCRIPTION:
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 7:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. ANODE-CATHODE
98ASB42819B
SC−70 (SOT−323)
STYLE 11:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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