M1MA151AT1

M1MA151AT1, M1MA152AT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount applications. http://onsemi.com SC−59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V−100 mA Features SURFACE MOUNT • Fast trr, < 3.0 ns • Low CD, < 2.0 pF • Pb−Free Packages are Available ANODE 3 MAXIMUM RATINGS (TA = 25°C) Rating Symbol Reverse Voltage Value Unit 40 80 Vdc 40 80 Vdc IF 100 mAdc IFM 225 mAdc IFSM (Note 1) 500 mAdc Symbol Max Unit PD 200 mW VR M1MA151AT1 M1MA152AT1 Peak Reverse Voltage 2 1 CATHODE NO CONNECTION VRM M1MA151AT1 M1MA152AT1 Forward Current Peak Forward Current Peak Forward Surge Current THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature TJ 150 °C Storage Temperature Tstg −55 to + 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. t = 1 SEC 1 SC−59 CASE 318D MARKING DIAGRAM Mx M G G Mx = Device Code x = A for 151 B for 152 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 7 1 Publication Order Number: M1MA151AT1/D M1MA151AT1, M1MA152AT1 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Condition Min Max Unit VR = 35 V VR = 75 V − 0.1 mAdc IF = 100 mA − 1.2 Vdc IR = 100 mA 40 80 − Vdc CD VR = 0, f = 1.0 MHz − 2.0 pF trr (Note 2) IF = 10 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR − 3.0 ns Reverse Voltage Leakage Current IR M1MA151AT1 M1MA152AT1 Forward Voltage VF Reverse Breakdown Voltage VR M1MA151AT1 M1MA152AT1 Diode Capacitance Reverse Recovery Time (Figure 1) 2. trr Test Circuit RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr OUTPUT PULSE tp t A trr IF t 10% RL Irr = 0.1 IR 90% VR IF = 10 mA VR = 6 V RL = 100 W tp = 2 ms tr = 0.35 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit ORDERING INFORMATION Device M1MA151AT1 M1MA151AT1G Package Shipping† SC−59 SC−59 (Pb−Free) 3000 /Tape & Reel M1MA152AT1 M1MA152AT1G SC−59 SC−59 (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE H DATE 28 JUN 2012 SCALE 2:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 1 DIM A A1 b c D E e L HE E 2 b e MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 C A MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 XXX MG G SOLDERING FOOTPRINT* 1 0.95 0.037 0.95 0.037 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 GENERIC MARKING DIAGRAM L A1 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 XXX M G = Specific Device Code = Date Code = Pb−Free Package* (*Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42664B SC−59 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. N.C. 3. ANODE STYLE 5: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 6: PIN 1. ANODE 2. CATHODE 3. ANODE/CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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