M1MA151KT1G

M1MA151KT1, M1MA152KT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount applications. Features • Fast trr, < 3.0 ns • Low CD, < 2.0 pF • Available in 8 mm Tape and Reel • http://onsemi.com SC−59 PACKAGE SINGLE SILICON SWITCHING DIODES 40/80 V−100 mA SURFACE MOUNT Use M1MA151/2KT1 to order the 7 inch/3000 unit reel. Use M1MA151/2KT3 to order the 13 inch/10,000 unit reel. Pb−Free Packages are Available 3 CATHODE MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage M1MA151KT1 Symbol Value Unit VR 40 Vdc M1MA152KT1 Peak Reverse Voltage M1MA151KT1 Peak Forward Current Peak Forward Surge Current VRM 40 Vdc IF 100 mAdc IFM 225 mAdc IFSM (Note 1) 500 mAdc 80 SC−59 CASE 318D MARKING DIAGRAM THERMAL CHARACTERISTICS Rating 2 NO CONNECTION 80 M1MA152KT1 Forward Current 1 ANODE Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 °C Storage Temperature Tstg −55 to + 150 °C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. t = 1 SEC Mx M G 1 Mx x = Device Code = H for 151 I for 152 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2012 July, 2012 − Rev. 8 1 Publication Order Number: M1MA151KT1/D M1MA151KT1, M1MA152KT1 ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Reverse Voltage Leakage Current Symbol Condition Min Max Unit IR VR = 35 V − 0.1 mAdc VR = 75 V − 0.1 VF IF = 100 mA − 1.2 Vdc VR IR = 100 mA 40 − Vdc 80 − M1MA151KT1 M1MA152KT1 Forward Voltage Reverse Breakdown Voltage M1MA151KT1 M1MA152KT1 Diode Capacitance Reverse Recovery Time (Figure 1) CD VR = 0, f = 1.0 MHz − 2.0 pF trr (Note 2) IF = 10 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR − 3.0 ns 2. trr Test Circuit RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr OUTPUT PULSE tp trr IF t t A 10% RL Irr = 0.1 IR 90% VR IF = 10 mA VR = 6 V RL = 100 W tp = 2 ms tr = 0.35 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit ORDERING INFORMATION Device M1MA151KT1 M1MA151KT1G M1MA152KT1 M1MA152KT1G Package Shipping† SC−59 3000 Units / Tape & Reel SC−59 (Pb−Free) 3000 Units / Tape & Reel SC−59 3000 Units / Tape & Reel SC−59 (Pb−Free) 3000 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−59 CASE 318D−04 ISSUE H DATE 28 JUN 2012 SCALE 2:1 D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 1 DIM A A1 b c D E e L HE E 2 b e MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 C A MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 XXX MG G SOLDERING FOOTPRINT* 1 0.95 0.037 0.95 0.037 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 GENERIC MARKING DIAGRAM L A1 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 XXX M G = Specific Device Code = Date Code = Pb−Free Package* (*Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42664B SC−59 STYLE 1: PIN 1. BASE 2. EMITTER 3. COLLECTOR STYLE 2: PIN 1. ANODE 2. N.C. 3. CATHODE STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE STYLE 4: PIN 1. CATHODE 2. N.C. 3. ANODE STYLE 5: PIN 1. CATHODE 2. CATHODE 3. ANODE STYLE 6: PIN 1. ANODE 2. CATHODE 3. ANODE/CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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