M1MA152WKT1

M1MA151WKT1, M1MA152WKT1, SM1MA151WKT1G Common Cathode Silicon Dual Switching Diodes These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount applications. http://onsemi.com SC−59 PACKAGE SINGLE SILICON SWITCHING DIODES 40 V/80 V 100 mA SURFACE MOUNT Features • • • • • Fast trr, < 3.0 ns Low CD, < 2.0 pF AEC−Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements Pb−Free Packages are Available* SC−59 CASE 318D STYLE 3 3 CATHODE MAXIMUM RATINGS (TA = 25°C) Rating Symbol Value Unit 40 80 Vdc 40 80 Vdc 100 150 mAdc 225 340 mAdc 500 750 mAdc Symbol Max Unit Power Dissipation PD 200 mW Junction Temperature TJ 150 °C M1MA151WKT1 °C M1MA151WKT1G SC−59 3,000/Tape & Reel (Pb−Free) SM1MA151WKT1G SC−59 3,000/Tape & Reel (Pb−Free) Reverse Voltage M1MA151WKT1, SM1MA151WKT1G M1MA152WKT1 VR Peak Reverse Voltage M1MA151WKT1, SM1MA151WKT1G M1MA152WKT1 VRM Forward Current Single Dual IF Peak Forward Current Single Dual Peak Forward Surge Current Single Dual IFM IFSM (Note 1) 1 THERMAL CHARACTERISTICS Rating Storage Temperature Tstg −55 to + 150 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. t = 1 sec *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 July, 2012 − Rev. 11 1 ANODE 2 MARKING DIAGRAM Mx M G G Mx = Device Code x =T for 151 U for 152 M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device M1MA152WKT1 M1MA152WKT1G Package Shipping† SC−59 3,000/Tape & Reel SC−59 3,000/Tape & Reel SC−59 3,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: M1MA151WKT1/D M1MA151WKT1, M1MA152WKT1, SM1MA151WKT1G ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Symbol Reverse Voltage Leakage Current M1MA151WKT1, SM1MA151WKT1G M1MA152WKT1 IR Condition Min Max Unit VR = 35 V VR = 75 V − − 0.1 0.1 mAdc IF = 100 mA − 1.2 Vdc IR = 100 mA 40 80 − − Vdc Forward Voltage VF Reverse Breakdown Voltage M1MA151WKT1, SM1MA151WKT1G M1MA152WKT1 VR Diode Capacitance CD VR = 0, f = 1.0 MHz − 2.0 pF trr (Note 2) IF = 10 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR − 3.0 ns Reverse Recovery Time (Figure 1) 2. trr Test Circuit RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE tr OUTPUT PULSE tp trr IF t t A 10% RL Irr = 0.1 IR 90% VR tp = 2 ms tr = 0.35 ns Figure 1. Reverse Recovery Time Equivalent Test Circuit http://onsemi.com 2 IF = 10 mA VR = 6 V RL = 100 W M1MA151WKT1, M1MA152WKT1, SM1MA151WKT1G 100 IR, REVERSE CURRENT (mA) 100 10 1 0.1 155°C 0 0.2 TA = −55°C 25°C 0.4 0.6 0.8 1 1.2 1 0.1 TA = 25°C 0.01 0.001 TA = −55°C 0.0001 0.00001 1.4 TA = 150°C 10 0 10 20 30 40 50 60 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 2. Forward Voltage Figure 3. Reverse Leakage 0.64 Cd, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1000 0.62 0.6 0.58 0.56 0.54 0.52 0.5 0 1 2 3 4 5 6 VR, REVERSE VOLTAGE (V) Figure 4. Diode Capacitance http://onsemi.com 3 7 8 70 80 M1MA151WKT1, M1MA152WKT1, SM1MA151WKT1G PACKAGE DIMENSIONS SC*59 CASE 318D*04 ISSUE H D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3 HE 1 DIM A A1 b c D E e L HE E 2 b e L A1 MILLIMETERS NOM MAX 1.15 1.30 0.06 0.10 0.43 0.50 0.14 0.18 2.90 3.10 1.50 1.70 1.90 2.10 0.40 0.60 2.80 3.00 MIN 0.039 0.001 0.014 0.003 0.106 0.051 0.067 0.008 0.099 INCHES NOM 0.045 0.002 0.017 0.005 0.114 0.059 0.075 0.016 0.110 MAX 0.051 0.004 0.020 0.007 0.122 0.067 0.083 0.024 0.118 STYLE 3: PIN 1. ANODE 2. ANODE 3. CATHODE C A MIN 1.00 0.01 0.35 0.09 2.70 1.30 1.70 0.20 2.50 SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.4 0.094 1.0 0.039 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb *Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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