M74VHC1GT32DTT1G

MC74VHC1GT32 2-Input OR Gate/CMOS Logic Level Shifter Features • • • • • • • • • • High Speed: tPD = 3.5 ns (Typ) at VCC = 5 V Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°C TTL−Compatible Inputs: VIL = 0.8 V; VIH = 2 V CMOS−Compatible Outputs: VOH > 0.8 VCC; VOL < 0.1 VCC @Load Power Down Protection Provided on Inputs and Outputs Balanced Propagation Delays Pin and Function Compatible with Other Standard Logic Families Chip Complexity: FETs = 65; Equivalent Gates = 15 NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant IN B 5 1 www.onsemi.com MARKING DIAGRAMS 5 5 1 SC−88A / SC70−5 / SOT−353 DF SUFFIX CASE 419A M The MC74VHC1GT32 is an advanced high speed CMOS 2−input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The device input is compatible with TTL−type input thresholds and the output has a full 5 V CMOS level output swing. The input protection circuitry on this device allows overvoltage tolerance on the input, allowing the device to be used as a logic−level translator from 3 V CMOS logic to 5 V CMOS Logic or from 1.8 V CMOS logic to 3 V CMOS Logic while operating at the high−voltage power supply. The MC74VHC1GT32 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1GT32 to be used to interface 5 V circuits to 3 V circuits. The output structures also provide protection when VCC = 0 V. These input and output structures help prevent device destruction caused by supply voltage − input/output voltage mismatch, battery backup, hot insertion, etc. VN M G G 1 5 5 VN M G G 1 TSOP−5 / SOT23−5 / SC59−5 DT SUFFIX CASE 483 VN M G 1 = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. PIN ASSIGNMENT 1 IN B 2 IN A 3 GND 4 OUT Y 5 VCC VCC FUNCTION TABLE IN A GND 2 Inputs 4 3 OUT Y Figure 1. Pinout (Top View) IN A IN B ≥1 Output A B Y L L H H L H L H L H H H OUT Y ORDERING INFORMATION Figure 2. Logic Symbol © Semiconductor Components Industries, LLC, 2013 May, 2018 − Rev. 13 See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. 1 Publication Order Number: MC74VHC1GT32/D MC74VHC1GT32 MAXIMUM RATINGS Symbol Characteristics Value Unit VCC DC Supply Voltage −0.5 to +7.0 V VIN DC Input Voltage −0.5 to +7.0 V −0.5 to 7.0 −0.5 to VCC + 0.5 V −20 mA +20 mA +25 mA VOUT DC Output Voltage IIK Input Diode Current IOK Output Diode Current IOUT DC Output Current, per Pin ICC DC Supply Current, VCC and GND PD Power dissipation in still air qJA Thermal resistance TL VCC = 0 High or Low State VOUT < GND; VOUT > VCC +50 mA SC−88A, TSOP−5 200 mW SC−88A, TSOP−5 333 °C/W Lead temperature, 1 mm from case for 10 s 260 °C TJ Junction temperature under bias +150 °C Tstg Storage temperature −65 to +150 °C > 2000 > 200 N/A V ±500 mA VESD ESD Withstand Voltage ILatchup Latchup Performance Human Body Model (Note 1) Machine Model (Note 2) Charged Device Model (Note 3) Above VCC and Below GND at 125°C (Note 4) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Tested to EIA/JESD22−A114−A 2. Tested to EIA/JESD22−A115−A 3. Tested to JESD22−C101−A 4. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol Characteristics Min Max Unit VCC DC Supply Voltage 3.0 5.5 V VIN DC Input Voltage 0.0 5.5 V 0.0 0.0 5.5 VCC V −55 +125 °C 0 0 100 20 ns/V VOUT DC Output Voltage TA VCC = 0 High or Low State Operating Temperature Range tr , tf VCC = 3.3 V ± 0.3 V VCC = 5.0 V ± 0.5 V Input Rise and Fall Time 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80 ° C 117.8 TJ = 90 ° C 1,032,200 TJ = 100 ° C 80 FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 110° C Time, Years TJ = 120° C Time, Hours TJ = 130 ° C Junction Temperature °C NORMALIZED FAILURE RATE Device Junction Temperature versus Time to 0.1% Bond Failures 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature www.onsemi.com 2 MC74VHC1GT32 DC ELECTRICAL CHARACTERISTICS VCC Symbol Parameter Test Conditions Min 1.4 2.0 2.0 VIH Minimum High−Level Input Voltage 3.0 4.5 5.5 VIL Maximum Low−Level Input Voltage 3.0 4.5 5.5 VOH Minimum High−Level Output Voltage VIN = VIH or VIL VOL Maximum Low−Level Output Voltage VIN = VIH or VIL TA ≤ 85°C TA = 25°C (V) Typ Max Min 1.4 2.0 2.0 0.53 0.8 0.8 VIN = VIH or VIL IOH = −50 mA 3.0 4.5 2.9 4.4 VIN = VIH or VIL IOH = −4 mA IOH = −8 mA 3.0 4.5 2.58 3.94 VIN = VIH or VIL IOL = 50 mA 3.0 4.5 VIN = VIH or VIL IOL = 4 mA IOL = 8 mA Max 3.0 4.5 −55 ≤ TA ≤ 125°C Min Max 1.4 2.0 2.0 0.53 0.8 0.8 V 0.53 0.8 0.8 2.9 4.4 2.9 4.4 2.48 3.80 2.34 3.66 Unit V V V 0.0 0.0 0.1 0.1 0.1 0.1 0.1 0.1 3.0 4.5 0.36 0.36 0.44 0.44 0.52 0.52 V V IIN Maximum Input Leakage Current VIN = 5.5 V or GND 0 to 5.5 ±0.1 ±1.0 ±1.0 mA ICC Maximum Quiescent Supply Current VIN = VCC or GND 5.5 2.0 20 40 mA ICCT Quiescent Supply Current Input: VIN = 3.4 V 5.5 1.35 1.50 1.65 mA IOPD Output Leakage Current VOUT = 5.5 V 0.0 0.5 5.0 10 mA ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ AC ELECTRICAL CHARACTERISTICS (Cload = 50 pF, Input tr = tf = 3.0ns) TA ≤ 85°C TA = 25°C Symbol tPLH, tPHL CIN Parameter Maximum Propagation Delay, Input A or B to Y Min Test Conditions Typ Max Min Max −55 ≤ TA ≤ 125°C Min Max Unit ns VCC = 3.3 ± 0.3 V CL = 15 pF CL = 50 pF 4.8 6.1 7.9 11.4 9.5 13.0 11.5 15.5 VCC = 5.0 ± 0.5 V CL = 15 pF CL = 50 pF 3.7 4.4 5.5 7.5 6.5 8.5 8.0 10.0 5.5 10 10 10 Maximum Input Capacitance pF Typical @ 25°C, VCC = 5.0 V CPD 11 Power Dissipation Capacitance (Note 5) pF 5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC. www.onsemi.com 3 MC74VHC1GT32 Input A or B 50% 50% VCC GND tPLH tPHL VOH Output Y 50% VCC VOL Figure 4. Switching Waveforms TEST POINT OUTPUT DEVICE UNDER TEST CL * *Includes all probe and jig capacitance Figure 5. Test Circuit ORDERING INFORMATION Package Shipping† SC−88A / SOT−353 / SC−70−5 (Pb−Free) 3000 / Tape & Reel TSOP−5 / SOT−23 / SC−59 (Pb−Free) 3000 / Tape & Reel Device M74VHC1GT32DFT1G NLVVHC1GT32DFT1G* M74VHC1GT32DFT2G NLVVHC1GT32DFT2G* M74VHC1GT32DTT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. www.onsemi.com 4 MC74VHC1GT32 PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE L A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) M B M N J C K H SOLDER FOOTPRINT 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 www.onsemi.com 5 SCALE 20:1 mm Ǔ ǒinches INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 MC74VHC1GT32 PACKAGE DIMENSIONS TSOP−5 CASE 483 ISSUE M NOTE 5 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. D 5X 0.20 C A B 0.10 T M 2X 0.20 T B 5 1 4 2 S 3 K B DETAIL Z G A A TOP VIEW DETAIL Z J C 0.05 H SIDE VIEW C SEATING PLANE MILLIMETERS MIN MAX 2.85 3.15 1.35 1.65 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 DIM A B C D G H J K M S END VIEW SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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