MA3075WALT1G,
SZMA3075WALT1G
Zener ESD Protection Diode
SOT−23 Dual Common Anode Zeners for
ESD Protection
www.onsemi.com
These dual monolithic silicon zener diodes are designed for
applications requiring transient overvoltage protection capability. They
are intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment and other applications. Their dual junction common
anode design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
1
3
2
PIN 1. CATHODE
2. CATHODE
3. ANODE
Features
• SOT−23 Package Allows Two Separate Unidirectional
•
•
•
•
•
•
Configurations
Low Leakage < 1 mA @ 5.0 V
Breakdown Voltage: 7.2−7.9 V @ 5 mA
Low Capacitance (80 pF typical @ 0 V, 1 MHz)
ESD Protection Meeting: 16 kV Human Body Model
ESD Protection Meeting: 30 kV Air and Contact Discharge
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
SOT−23
CASE 318
STYLE 12
MARKING DIAGRAM
7W5 M G
G
Mechanical Characteristics:
•
•
•
•
1
Void Free, Transfer−Molded, Thermosetting Plastic Case
Corrosion Resistant Finish, Easily Solderable
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
7W5
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation @ 100 ms (Note 1)
Ppk
15
W
Steady State Power Dissipation
Derate above 25°C (Note 2)
°PD°
225
1.8
°mW°
mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA
556
°C/W
Maximum Junction Temperature
RqJA
417
°C/W
Operating Junction and Storage
Temperature Range
TJ, Tstg
− 55 to +150
°C
ESD Discharge
MIL STD 883C − Method 3015−6
IEC61000−4−2, Air Discharge
IEC61000−4−2, Contact Discharge
VPP
kV
16
30
30
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Non−repetitive 100 ms pulse width
2. Mounted on FR−5 Board = 1.0 X 0.75 X 0.062 in.
© Semiconductor Components Industries, LLC, 2001
October, 2017 − Rev. 4
1
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
MA3075WALT1G
SOT−23
(Pb−Free)
3000 /
Tape & Reel
SZMA3075WALT1G
SOT−23
(Pb−Free)
3000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MA3075WALT1/D
MA3075WALT1G, SZMA3075WALT1G
I
ELECTRICAL CHARACTERISTICS
Parameter
Forward Voltage
Symbol
Conditions
VF
IF = 10 mA
Voltage*2
VZ
IZ = 5 mA
Operating Resistance
RZK
IZ = 0.5 mA
RZ
IZ = 5 mA
Zener
Reverse Current
Min
7.2
Typ
Max
Unit
0.8
0.9
V
7.5
6
7.9
V
120
W
15
W
IR1
VR = 5 V
1
mA
IR2
VR = 6.5 V
60
mA
Temperature Coefficient
of Zener Voltage*3
SZ
IZ = 5 mA
5.3
mV/°C
Terminal Capacitance
Ct
VR = 0 V
2.5
4.0
80
IF
VC VBR VRWM
IPP
pF
Product parametric performance is indicated in the Electrical Characteristics for the
listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
100
250
200
150
100
50
0
0
25
50
75
100
125
TEMPERATURE (°C)
150
PULSE WIDTH (tp) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
70
60
HALF VALUE IRSM/2 @ 20 ms
50
40
30
tp
20
10
0
175
0
20
40
t, TIME (ms)
60
80
Figure 2. 8 X 20 ms Pulse Waveform
1000
100
IF, FORWARD CURRENT (mA)
PPK, PEAK POWER (W)
PEAK VALUE IRSM @ 8 ms
80
Figure 1. Steady State Power Derating Curve
100
10
1
Uni−Directional
tr
90
% OF PEAK PULSE CURRENT
PD, POWER DISSIPATION (mW)
300
V
IR VF
IT
10
100
tp, PULSE WIDTH (ms)
−40°C
25°C
1
0.1
0.01
1000
TA = 85°C
10
0
Figure 3. Pulse Rating Curve
0.2
0.8
0.4
0.6
VF, FORWARD VOLTAGE (V)
1
Figure 4. Forward Current versus
Forward Voltage
www.onsemi.com
2
1.2
MA3075WALT1G, SZMA3075WALT1G
1000
1
IR, LEAKAGE CURRENT (nA)
VF, FORWARD VOLTAGE (V)
1.2
IF = 100 mA
0.8
3 mA
0.6
10 mA
0.4
0.2
0
−60
−40
−20
0
40
60
20
TA, AMBIENT TEMPERATURE (°C)
80
100
−40°C
10
25°C
1
0.1
0.01
100
TA = 85°C
0
Figure 5. Forward Voltage versus Temperature
100
VR = 6 V
IZ, ZENER CURRENT (mA)
IR, LEAKAGE CURRENT (nA)
7
8
Figure 6. Leakage Current versus
Reverse Voltage
1000
100
VR = 5 V
10
1
TA = −40°C
85°C
10
25°C
1
0.1
0.01
VR = 1 V
0.1
−60
−40
−20
0
20
40
60
TA, AMBIENT TEMPERATURE (°C)
80
0.001
100
5.5
Figure 7. Leakage Current versus Temperature
7
7.5
6.5
VZ, ZENER VOLTAGE (V)
8
8.5
RZ, OPERATING RESISTANCE (W)
100
80
f = 1 MHz
TA = 25°C
70
60
50
40
30
20
10
0
6
Figure 8. Zener Current versus
Zener Voltage
90
Cd, CAPACITANCE (pF)
4
5
6
2
3
VR, REVERSE VOLTAGE (V)
1
0
1
2
3
4
5
6
VR, REVERSE VOLTAGE (V)
7
10
1
0.1
8
0.1
Figure 9. Capacitance
10
1
IZ, ZENER CURRENT (mA)
Figure 10. Operating Resistance versus
Zener Current
www.onsemi.com
3
100
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
SCALE 4:1
GENERIC
MARKING DIAGRAM*
XXXMG
G
1
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318
ISSUE AT
DATE 01 MAR 2023
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. CATHODE
PIN 1. NO CONNECTION PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. ANODE
3. CATHODE−ANODE
3. GATE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
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