MAC3030−8
Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave AC control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full−wave silicon gate controlled solid−state devices are
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied main terminal voltage with positive
or negative gate triggering.
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TRIACS
8.0 AMPERES RMS
250 VOLTS
Features
• Blocking Voltage to 250 Volts
• All Diffused and Glass Passivated Junctions for Greater Parameter
Uniformity and Stability
MT2
• Small, Rugged, Thermowatt Construction for Low Thermal
•
•
MT1
G
Resistance, High Heat Dissipation and Durability
Gate Triggering Guaranteed in Four Modes (Quadrants)
Pb−Free Packages are Available*
MARKING
DIAGRAM
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to +125°C, Sine Wave 50 to
60 Hz, Gate Open)
VDRM,
VRRM
250
V
On−State RMS Current (TC = +70°C)
Full Cycle Sine Wave 50 to 60 Hz
IT(RMS)
8.0
A
Peak Non−Repetitive Surge Current
(One Full Cycle, Sine Wave 60 Hz,
TC = +25°C)
Preceded and followed by rated current
ITSM
80
A
Circuit Fusing Considerations, (t = 8.3 ms)
I2t
26
A2s
PGM
20
W
PG(AV)
0.35
W
IGM
2.0
A
Rating
Peak Gate Power
(TC = +70°C, Pulse Width = 10 ms)
Average Gate Power
(TC = +70°C, t = 8.3 ms)
Peak Gate Current
(TC = +70°C, Pulse Width = 10 ms)
MAC30308G
AYWW
1
2
TO−220AB
CASE 221A−07
STYLE 4
3
MAC3030−8 = Standard Device Code
MAC30308G = Pb−Free Device Code
A
= Assembly Location
Y
= Year
WW = Work Week
PIN ASSIGNMENT
Operating Junction Temperature Range
TJ
−40 to +125
°C
1
Storage Temperature Range
Tstg
−40 to +150
°C
2
Main Terminal 2
3
Gate
4
Main Terminal 2
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 0
1
Main Terminal 1
Package
Shipping
MAC3030−8
TO−220AB
500 Units/Box
MAC3030−8G
TO−220AB
(Pb−Free)
500 Units/Box
Publication Order Number:
MAC3030−8/D
MAC3030−8
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
Value
Unit
RqJC
RqJA
2.0
62.5
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
−
10
2.0
mA
mA
−
1.2
1.65
V
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = +125°C
IDRM,
IRRM
ON CHARACTERISTICS
Peak On-State Voltage
(ITM = "11 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%)
VTM
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
IGT
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
VGT
Gate Non−Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 V, RL = 100 W, TJ = +125°C) All Four Quadrants
mA
−
−
−
−
12
12
20
35
50
50
50
75
V
−
−
−
−
0.9
0.9
1.1
1.4
2.0
2.0
2.0
2.5
VGD
0.2
−
−
V
Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open,
Initiating Current = "200 mA, TC = +25°C)
IH
−
6.0
50
mA
Turn-On Time
(Rated VDRM, ITM = 11 A)
(IGT = 120 mA, Rise Time = 0.1 ms, Pulse Width = 2 ms)
tgt
−
1.5
−
ms
dv/dt(c)
−
5.0
−
V/ms
dv/dt
−
100
−
V/ms
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(VD = Rated VDRM, ITM = 14 A, Commutating di/dt = 5.0 A/ms,
Gate Unenergized, TC = 70°C)
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise,
Gate Open, TC = +70°C)
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2
MAC3030−8
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
VTM
on state
IH
IRRM at VRRM
off state
IH
Quadrant 3
MainTerminal 2 −
VTM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
Quadrant I
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
IGT −
+ IGT
(−) MT2
Quadrant III
Quadrant 1
MainTerminal 2 +
(−) MT2
Quadrant IV
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
+ Voltage
IDRM at VDRM
14.0
P (AV) , AVERAGE POWER DISSIPATION
130
CONDUCTION ANGLE = 360°
10.0
110
100
90
80
70
8.0
6.0
4.0
2.0
0
2.0 3.0
4.0
5.0 6.0 7.0
8.0
IT(RMS), RMS ON-STATE CURRENT (AMPS)
1.0
9.0
10.0
0
1.0
2.0 3.0
4.0
5.0 6.0 7.0
8.0
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 1. Current Derating
100
10.0
100
50
20
10
5.0
2.0
9.0
Figure 2. Power Dissipation
ITSM , PEAK SURGE CURRENT (AMP)
0
TJ = 25°C
TJ = 125°C
80
60
CYCLE
40
TC = 70°C
f = 60 Hz
Surge is preceded and followed by rated current
20
0
1.0
1.0
2.0
0.5
3.0
5.0
7.0
10
NUMBER OF CYCLES
Figure 4. Maximum Non−Repetitive Surge Current
0.2
VGT , GATE TRIGGER VOLTAGE (NORMALIZED)
60
CONDUCTION ANGLE = 360°
12.0
120
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (° C)
MAC3030−8
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 3. Maximum On−State Characteristics
2.0
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1.6
1.2
0.8
0.4
0
−60
−40
0
40
−20
20
TC, CASE TEMPERATURE (°C)
60
Figure 5. Typical Gate Trigger Voltage
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4
80
2.8
2.0
IH , HOLDING CURRENT (NORMALIZED)
I GT, GATE TRIGGER CURRENT (NORMALIZED)
MAC3030−8
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
1.6
1.2
0.8
0.4
0
−60
−40
−20
0
20
40
60
2.4
1.6
1.2
0.8
0.4
0
−60
80
OFF-STATE VOLTAGE = 12 Vdc
ALL MODES
2.0
−40
TC, CASE TEMPERATURE (°C)
0
20
40
60
80
TC, CASE TEMPERATURE (°C)
Figure 6. Typical Gate Trigger Current
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
−20
Figure 7. Typical Holding Current
1.0
0.5
0.2
ZqJC(t) = r(t) • RqJC
0.1
0.05
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
20
50
100
t, TIME (ms)
Figure 8. Thermal Response
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5
200
500
1.0 k
2.0 k
5.0 k
10 k
MAC3030−8
PACKAGE DIMENSIONS
TO−220AB
CASE 221A−07
ISSUE AA
−T−
B
F
T
SEATING
PLANE
C
S
4
Q
A
1 2 3
U
H
K
Z
R
L
V
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
−−−
−−−
0.080
STYLE 4:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
−−−
−−−
2.04
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MAC3030−8/D