MB1S

DATA SHEET www.onsemi.com Bridge Rectifiers, 0.5 A MB1S-MB8S Description SOIC4 W CASE 751EP The MB family of bridge rectifiers is a 0.5 A rectifier family that achieves high surge current absorption within a very small foot print. Within its small 35 mm2 form factor, the MB family shines in its surge capability. In order to absorb high surge currents, the design supports a 35 A IFSM rating and a 5.0 A2Sec I2T rating. Devices in the family are also rated to breakdown voltages of up to 1000 V. These features make the MB family ideal for small power supplies that need a little extra surge capability. For higher IFAV current ratings, lower profile packaging, or lower VF values, explore the onsemi MDB family of bridge rectifiers. For improved VF and efficiency values in the MB package or even higher surge capability, ask about onsemi’s pending MBxSV family. Features • • • • • MARKING DIAGRAM − $Y&Z&3 MB*S $Y &Z &3 MB*S * Low−Leakage Surge Overload Rating: 35 A peak Ideal for Printed Circuit Board UL Certified: UL #E258596 This Device is Pb−Free and RoHS Compliant + = Logo = Assembly Plant Code = 3−Digit Data Code (Year & Week) = Specific Device Code = 1/2/4/6/8 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2007 August, 2021 − Rev. 5 1 Publication Order Number: MB8S/D MB1S−MB8S ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted) Parameter Symbol MB1S MB2S MB4S MB6S MB8S Unit VRRM Maximum Repetitive Reverse Voltage 100 200 400 600 800 V VRMS Maximum RMS Bridge Input Voltage 70 140 280 420 560 V DC Reverse Voltage (Rated VR) 100 200 400 600 800 V VR IF(AV) Average Rectified Forward Current at TA = 50°C 0.5 A IFSM Non−Repetitive Peak Forward Surge Current: 8.3 ms Single Half−Sine−Wave 35 A TSTG Storage Temperature Range −55 to +150 °C Operating Junction Temperature Range −55 to +150 _C TJ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Value Unit Power Dissipation 1.4 W RθJA Thermal Resistance, Junction to Ambient, per Leg (Note 1) 85 °C/W RθJL Thermal Resistance, Junction to Lead, per Leg (Note 1) 20 °C/W Value Unit PD Parameter 1. Device mounted on PCB with 0.5 × 0.5 inch (13 × 13 mm) lead length. ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted) Symbol Parameter Conditions VF Forward Voltage, per Bridge IF = 0.5 A 1.0 V IR Reverse Current, per Leg at Rated VR TA = 25°C 5.0 mA TA = 125°C 0.5 mA I2t I2t t < 8.3 ms 5.0 A2s CT Total Capacitance, per Leg VR = 4.0 V, f = 1.0 MHz 13 pF Rating for Fusing Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Part Number Top Mark Package Shipping† MB1S MB1S 3,000 / Tape & Reel MB2S MB2S SOIC4 W (Pb−Free) MB4S MB4S MB6S MB6S MB8S MB8S †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 MB1S−MB8S TYPICAL PERFORMANCE CHARACTERISTICS 100 0.7 Aluminum Substrate 0.6 Instantaneous Reverse Leakage Current (mA) Average Forward Rectified Current (A) 0.8 0.5 Glass Epoxy P.C.B 0.4 0.3 0.2 0.1 0 Resistive or Inductive Load 0 20 40 60 80 1 0.1 Tj = 25°C 0.01 100 120 140 160 Ambient Temperature (5C) 20 F = 50 Hz F = 60 Hz 15 10 5 0 1 Cycle 10 1 Instantaneous Forward Current (A) Figure 3. Maximum Non−Repetitive Peak Forward Surge Current Per Leg Tj = 25°C 1 0.1 Tj = 25°C Pulse Width = 300 ms 1% Duty Cycles 0.6 0.8 1.0 1.2 60 80 100 1.4 Tj = 25°C f = 1 MHz Vslg = 50 mVp−p 20 15 10 5 1 10 Reverse Voltage (V) 100 200 Figure 4. Typical Junction Capacitance Per Leg 10 0.4 25 0 0.1 100 Number of Cycles 0.01 0.2 40 30 Junction Capacitance (pF) Peak Forward Surge Current (A) 25 20 Figure 2. Typical Reverse Leakage Characteristics Per Leg Tj = 40°C Single Half Sine−Wave (JEDEC Method) 30 0 Percent of Rated Peak Reverse Voltage (%) Figure 1. Derating Curve for Output Rectified Current 35 Tj = 125°C 10 1.6 Instantaneous Forward Voltage (V) Figure 5. Typical Forward Voltage Characteristics Per Leg www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC4 W CASE 751EP ISSUE O 0.13 DATE 30 SEP 2016 C B A 0.13 C A B 0.10 C DOCUMENT NUMBER: DESCRIPTION: 98AON13753G SOIC4 W Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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