MB2S

Features Description • Low-Leakage The MB family of bridge rectifiers is a 0.5 A rectifier family that achieves high surge current absorption within a • Surge Overload Rating: 35 A peak very small foot print. Within its small 35 mm2 form factor, the MB family shines in its surge capability. In order to absorb high surge currents, the design supports a 35 A • Ideal for Printed Circuit Board • UL Certified: UL #E258596 4 SOIC-4 IFSM rating and a 5.0 A2Sec I2T rating. Devices in the family are also rated to breakdown voltages of up to 1000 V. These features make the MB family ideal for small power supplies that need a little extra surge capability. For higher IFAV current ratings, lower profile packaging, or lower VF values, explore the ON Semiconductor MDB family of bridge rectifiers. For improved VF and efficiency values in the MB package or even higher surge capability, ask about ON Semiconductor’s pending MBxSV family. 3 ~ + ~ + + ~ ~2 1 Polarity symbols molded or mark on body Ordering Informations Part Number Marking MB1S MB1S MB2S MB2S MB4S MB4S MB6S MB6S MB8S MB8S © 2007 Semiconductor Components Industries, LLC. October-2017, Rev. 2 1 Package Packing Method SOIC-4 Tape and Reel Publication Order Number: MB8S/D MB1S - MB8S — 0.5 A Bridge Rectifiers MB1S - MB8S 0.5 A Bridge Rectifiers Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Value Parameter MB1S MB2S MB4S MB6S MB8S Unit VRRM Maximum Repetitive Reverse Voltage 100 200 400 600 800 V VRMS Maximum RMS Bridge Input Voltage 70 140 280 420 560 V DC Reverse Voltage (Rated VR) 100 200 400 600 800 V VR IF(AV) Average Rectified Forward Current at TA = 50°C 0.5 A IFSM Non-Repetitive Peak Forward Surge Current: 8.3 ms Single Half-Sine-Wave 35 A TSTG Storage Temperature Range -55 to +150 °C Operating Junction Temperature Range -55 to +150 °C Value Unit 1.4 W 85 °C/W 20 °C/W Value Unit IF = 0.5 A 1.0 V TA = 25°C 5.0 μA TA = 125°C 0.5 mA TJ Thermal Characteristics Symbol PD RθJA RθJL Parameter Power Dissipation Thermal Resistance, Junction to Ambient, per Thermal Resistance, Junction to Lead, per Leg(1) Leg(1) Note: 1. Device mounted on PCB with 0.5 x 0.5 inch (13 x 13 mm) lead length. Electrical Characteristics Values are at TA = 25°C unless otherwise specified. Symbol Parameter VF Forward Voltage, per Bridge IR Reverse Current, per Leg at Rated VR 2 2 Conditions I t I t Rating for Fusing t < 8.3 ms 5.0 A2s CT Total Capacitance, per Leg VR = 4.0 V, f = 1.0 MHz 13 pF www.onsemi.com 2 MB1S - MB8S — 0.5 A Bridge Rectifiers Absolute Maximum Ratings Forward Current, IF [A] 10 1 0.1 0.01 0.4 35 0.8 1 1.2 Forward Voltage, VF [V] 1.4 10 30 T C = 100 º C 25 20 15 10 5 0 0.6 Figure 2. Forward Voltage Characteristics Reverse Current, IR [mA] Peak Forward Surge Current, IFSM [A] Figure 1. Derating Curve for Output Rectified Current TA = 25º C μs Pulse Width = 300μ 2% Duty Cycle 1 2 5 10 20 Number of Cycles at 60Hz 50 100 Figure 3. Non-Repetitive Surge Current 1 0.1 TA = 25 º C 0.01 0 20 40 60 80 100 120 140 Percent of Rated Peak Reverse Voltage [%] Figure 4. Reverse Current vs. Reverse Voltage www.onsemi.com 3 MB1S - MB8S — 0.5 A Bridge Rectifiers Typical Performance Characteristics ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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