MBD701_09

MBD701_09

  • 厂商:

    ONSEMI(安森美)

  • 封装:

  • 描述:

    MBD701_09 - Silicon Hot-Carrier Diodes Schottky Barrier Diodes - ON Semiconductor

  • 详情介绍
  • 数据手册
  • 价格&库存
MBD701_09 数据手册
MBD701, MMBD701LT1 Preferred Device Silicon Hot-Carrier Diodes Schottky Barrier Diodes These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package. Features http://onsemi.com MARKING DIAGRAMS TO−92 2−Lead CASE 182 STYLE 1 1 2 2 CATHODE 1 ANODE • • • • • Extremely Low Minority Carrier Lifetime − 15 ps (Typ) Very Low Capacitance − 1.0 pF @ VR = 20 V High Reverse Voltage − to 70 V Low Reverse Leakage − 200 nA (Max) Pb−Free Packages are Available MBD 701 AYWW G G MAXIMUM RATINGS Rating Reverse Voltage Forward Power Dissipation MBD701 @ TA = 25°C MMBD701LT Derate above 25°C MBD701 MMBD701LT TJ Tstg Symbol VR PF Value 70 280 200 2.8 2.0 −55 to +125 −55 to +150 Unit V mW mW/°C °C °C 1 2 3 SOT−23 (TO−236) CASE 318 STYLE 8 5H M G G 1 3 CATHODE 1 ANODE Operating Junction Temperature Range Storage Temperature Range Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A = Assembly Location Y = Year WW = Work Week 5H = Device Code (SOT−23) M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mAdc) Total Capacitance (VR = 20 V, f = 1.0 MHz) Figure 1 Reverse Leakage (VR = 35 V) Figure 3 Forward Voltage (IF = 1.0 mAdc) Figure 4 Forward Voltage (IF = 10 mAdc) Figure 4 Symbol V(BR)R CT IR VF VF Min 70 − − − − Typ − 0.5 9.0 0.42 0.7 Max − 1.0 200 0.5 1.0 Unit V pF nAdc Vdc Vdc MBD701 ORDERING INFORMATION Device MBD701G MMBD701LT1 MMBD701LT1G MMBD701LT3 MMBD701LT3G Package TO−92 TO−92 (Pb−Free) SOT−23 Shipping† 1,000 Units / Box 1,000 Units / Box 3,000 / Tape & Reel SOT−23 3,000 / Tape & Reel (Pb−Free) SOT−23 10,000/T ape & Reel SOT−23 10,000/T ape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2009 March, 2009 − Rev. 5 1 Publication Order Number: MBD701/D MBD701, MMBD701LT1 TYPICAL ELECTRICAL CHARACTERISTICS 2.0 t , MINORITY CARRIER LIFETIME (ps) f = 1.0 MHz C T, TOTAL CAPACITANCE (pF) 1.6 500 400 KRAKAUER METHOD 300 1.2 0.8 200 0.4 100 0 0 5.0 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) 40 45 50 0 0 10 20 30 40 50 60 70 IF, FORWARD CURRENT (mA) 80 90 100 Figure 1. Total Capacitance Figure 2. Minority Carrier Lifetime 10 IF, FORWARD CURRENT (mA) TA = 100°C 100 IR, REVERSE LEAKAGE (m A) 1.0 10 TA = 85°C TA = - 40°C TA = 75°C 0.1 1.0 TA = 25°C 0.01 TA = 25°C 0.001 0.1 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 50 0 0.2 0.4 0.8 1.2 VF, FORWARD VOLTAGE (VOLTS) 1.6 2.0 Figure 3. Reverse Leakage Figure 4. Forward Voltage IF(PEAK) CAPACITIVE CONDUCTION IR(PEAK) FORWARD CONDUCTION STORAGE CONDUCTION SINUSOIDAL GENERATOR BALLAST NETWORK (PADS) PADS DUT SAMPLING OSCILLOSCOPE (50 W INPUT) Figure 5. Krakauer Method of Measuring Lifetime http://onsemi.com 2 MBD701, MMBD701LT1 PACKAGE DIMENSIONS TO−92 (TO−226AC) CASE 182−06 ISSUE L A B SEATING PLANE R L K D J NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND ZONE R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.050 BSC 0.100 BSC 0.014 0.016 0.500 --0.250 --0.080 0.105 --0.050 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.21 4.32 5.33 3.18 4.19 0.407 0.533 1.27 BSC 2.54 BSC 0.36 0.41 12.70 --6.35 --2.03 2.66 --1.27 2.93 --3.43 --- P D XX G H V C N SECTION X−X DIM A B C D G H J K L N P R V 1 2 N http://onsemi.com 3 ÉÉ ÉÉ STYLE 1: PIN 1. ANODE 2. CATHODE MBD701, MMBD701LT1 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D SEE VIEW C 3 E 1 2 HE c e b q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A A1 L L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your loca Sales Representative http://onsemi.com 4 MBD701/D
MBD701_09
物料型号: - MBD701:通孔安装的二极管,TO-92封装。 - MMBD701LT1:表面贴装的二极管,SOT-23封装。

器件简介: 这些二极管主要设计用于高效率的UHF和VHF检波器应用,也适用于许多其他快速切换的RF和数字应用。它们以低成本的塑料封装提供,满足高产量的消费和工业/商业需求,并提供表面贴装封装选项。

引脚分配: - MBD701:2脚为阴极,1脚为阳极。 - MMBD701LT1:1脚为阳极,2脚为阴极,3脚为空焊盘。

参数特性: - 极低的少数载流子寿命:15ps(典型值) - 极低的电容:1.0pF @ VR=20V - 高反向电压:达到70V - 低反向漏电流:最大200nA - 无铅封装可供选择

功能详解: 这些二极管具有快速开关特性,使其适合用于高频检波和数字应用。它们的低电容有助于减少高频信号路径中的信号损失。

应用信息: 这些二极管适用于需要快速开关的应用,如RF检波器、数字电路等。

封装信息: - MBD701:TO-92封装,每盒1000个单位。 - MMBD701LT1:SOT-23封装,每卷3000个单位。 - MMBD701LT1G:SOT-23无铅封装,每卷3000个单位。
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