MBR0530T3G

MBR0530, NRVB0530 Schottky Power Rectifier, Surface Mount 0.5 A, 30 V, SOD-123 Package The MBR0530 uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. These state−of−the−art devices have the following features: Features • • • • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIER 0.5 AMPERES 30 VOLTS Guardring for Stress Protection Low Forward Voltage 125°C Operating Junction Temperature Epoxy Meets UL 94, V−0 @ 0.125 in Package Designed for Optimal Automated Board Assembly NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant* SOD−123 CASE 425 STYLE 1 MARKING DIAGRAM Mechanical Characteristics • • • • • Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 1 B3 M G B3 MG G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MBR0530T1G SOD−123 (Pb−Free) 3,000 / Tape & Reel ** NRVB0530T1G SOD−123 (Pb−Free) 3,000 / Tape & Reel ** MBR0530T3G SOD−123 (Pb−Free) 10.000 / Tape & Reel *** NRVB0530T3G SOD−123 (Pb−Free) 10.000 / Tape & Reel *** Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 December, 2014 − Rev. 8 1 ** 8 mm Tape, 7” Reel *** 8 mm Tape, 13” Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MBR0530T1/D MBR0530, NRVB0530 MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 30 V Average Rectified Forward Current (Rated VR, TL = 100°C) IF(AV) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Range Tstg −65 to +150 Operating Junction Temperature TJ −65 to +125 °C dv/dt 1000 V/ms A 0.5 A 5.5 Voltage Rate of Change (Rated VR) ESD Rating: Machine Model = C Human Body Model = 3B °C V > 400 > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance − Junction−to−Ambient (Note 1) RqJA 206 °C/W Thermal Resistance − Junction−to−Lead RqJL 150 °C/W Symbol Value Unit 1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 0.1 Amps, TJ = 25°C) (iF = 0.5 Amps, TJ = 25°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (VR = 15 V, TC = 25°C) IR V 0.375 0.43 mA 130 20 104 1 TJ = 125°C 75°C 25°C I R, REVERSE CURRENT (A) μ iF, INSTANTANEOUS FORWARD CURRENT (AMPS) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%. -40°C 0.1 TJ = 125°C 1000 100 75°C 10 25°C 1 0.01 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0 5 10 15 20 25 30 vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current http://onsemi.com 2 35 40 MBR0530, NRVB0530 180 C, CAPACITANCE (pF) 160 TYPICAL CAPACITANCE AT 0 V = 170 pF 140 120 100 80 60 40 20 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Capacitance AVERAGE FORWARD CURRENT (AMP) 1 0.875 DC 0.75 0.625 SQUARE WAVE 0.5 =p 0.375 =5 0.25 = 10 0.125 Ipk/Iav = 20 0 60 67 74 81 88 95 102 109 116 123 130 LEAD TEMPERATURE (°C) P F(AV), AVERAGE POWER DISSIPATION (WATT) Figure 4. Current Derating (Lead) 0.35 0.315 TJ = 125°C SQUARE WAVE 0.28 DC =p 0.245 =5 = 10 0.21 Ipk/Iav = 20 0.175 0.14 0.105 0.07 0.035 0 0 0.1 0.2 0.3 0.4 0.5 0.6 IF(AV), AVERAGE FORWARD CURRENT (AMP) Figure 5. Power Dissipation http://onsemi.com 3 0.7 0.8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE G DATE 07 OCT 2009 SCALE 5:1 D A ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ A1 1 HE DIM A A1 b c D E HE L q E 2 q L b C ÉÉÉ ÉÉÉ ÉÉÉ 2.36 0.093 4.19 0.165 ÉÉÉ ÉÉÉ ÉÉÉ MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 ----0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 ----0.25 --10 ° 0° MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 0° INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 ----- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --10 ° GENERIC MARKING DIAGRAM* 1 SOLDERING FOOTPRINT* 0.91 0.036 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. XXXMG G XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1.22 0.048 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. STYLE 1: PIN 1. CATHODE 2. ANODE SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42927B SOD−123 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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