MBR10100

MBR1080G, MBR1090G, MBR10100G, NRVB10100G SWITCHMODE Power Rectifiers http://onsemi.com Features           Guard−Ring for Stress Protection Low Forward Voltage 175C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Low Power Loss/High Efficiency High Surge Capacity Low Stored Charge Majority Carrier Conduction AEC−Q101 Qualified and PPAP Capable NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements All Packages are Pb−Free* SCHOTTKY BARRIER RECTIFIERS 10 AMPERES, 80 to 100 VOLTS TO−220AC CASE 221B Mechanical Characteristics 3  Case: Epoxy, Molded  Weight: 1.9 Grams (Approximately)  Finish: All External Surfaces Corrosion Resistant and Terminal 1, 4 MARKING DIAGRAM Leads are Readily Solderable  Lead Temperature for Soldering Purposes:  260C Max. for 10 Seconds ESD Rating:  Human Body Model = 3B  Machine Model = C AY WWG B10x0 KA A Y WW G B10x0 x KA = Assembly Location = Year = Work Week = Pb−Free Package = Device Code = 8, 9 or 10 = Diode Polarity ORDERING INFORMATION Device Package Shipping MBR1080G TO−220 (Pb−Free) 50 Units/Rail MBR1090G TO−220 (Pb−Free) 50 Units/Rail MBR10100G TO−220 (Pb−Free) 50 Units/Rail NRVB10100G TO−220 (Pb−Free) 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 1 1 Publication Order Number: MBR1080/D MBR1080G, MBR1090G, MBR10100G, NRVB10100G MAXIMUM RATINGS Rating Symbol MBR/NRVB 1080 1090 10100 80 90 100 Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR V Average Rectified Forward Current (Rated VR) TC = 133C IF(AV) Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 133C IFRM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A Operating Junction Temperature (Note 1) TJ *65 to +175 C Storage Temperature Tstg *65 to +175 C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms 10 A A 20 A 150 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction−to−Case RqJC 2.0 C/W Maximum Thermal Resistance, Junction−to−Ambient RqJA 60 C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 10 Amps, TC = 125C) (iF = 10 Amps, TC = 25C) (iF = 20 Amps, TC = 125C) (iF = 20 Amps, TC = 25C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 125C) (Rated dc Voltage, TC = 25C) iR 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle  2.0%. http://onsemi.com 2 0.7 0.8 0.85 0.95 6.0 0.10 V mA 10 50 TJ = 150C 20 IR , REVERSE CURRENT (mA) 150C 10 100C 125C 5.0 3.0 TJ = 25C 1.0 1.0 125C 0.1 100C 0.01 0.001 25C 0.5 0.0001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.8 0.7 1.0 0.9 20 40 60 Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current I F(AV) , AVERAGE FORWARD CURRENT (AMPS) RATED VOLTAGE APPLIED RqJC = 2C/W dc 15 SQUARE WAVE 10 5.0 0 100 120 140 TC, CASE TEMPERATURE (C) 160 20 (HEATSINK) RqJA = 16C/W (NO HEATSINK) RqJA = 60C/W 15 dc 5.0 180 SQUARE WAVE 0 0 20 40 60 8.0 IPK/IAV = p 7.0 6.0 IPK/IAV = 5.0 5.0 IPK/IAV = 10 dc IPK/IAV = 20 3.0 SQUARE WAVE 2.0 1.0 0 1.0 100 120 140 160 Figure 4. Typical Current Derating, Ambient TA = 25C 0 80 TA, AMBIENT TEMPERATURE (C) 10 4.0 RATED VOLTAGE APPLIED dc 10 Figure 3. Typical Current Derating, Case 9.0 100 80 VR, REVERSE VOLTAGE (VOLTS) 20 80 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) MBR1080G, MBR1090G, MBR10100G, NRVB10100G 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 IF(AV), AVERAGE CURRENT (AMPS) Figure 5. Forward Power Dissipation http://onsemi.com 3 10 180 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220, 2−LEAD CASE 221B−04 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B Q SCALE 1:1 F S T DIM A B C D F G H J K L Q R S T U 4 A 1 U 3 H K L R D J G STYLE 1: PIN 1. 2. 3. 4. DOCUMENT NUMBER: DESCRIPTION: 98ASB42149B TO−220, 2−LEAD CATHODE N/A ANODE CATHODE DATE 12 APR 2013 STYLE 2: PIN 1. 2. 3. 4. INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.039 0.142 0.161 0.190 0.210 0.110 0.130 0.014 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 1.00 3.61 4.09 4.83 5.33 2.79 3.30 0.36 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27 ANODE N/A CATHODE ANODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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