MBR10100MFST3G

MBR10100MFS, NRVB10100MFS SWITCHMODE Power Rectifiers Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After • • • • • • Board Mounting Guardring for Stress Protection Low Forward Voltage Drop 175°C Operating Junction Temperature Wettable Flacks Option Available NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free Devices http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 100 VOLTS 5,6 1,2,3 MARKING DIAGRAM Mechanical Characteristics: • • • • • Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 Average Rectified Forward Current (Rated VR, TC = 165°C) IF(AV) 10 Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 163°C) IFRM 20 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature TJ −55 to +175 °C Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) EAS 75 mJ A 1 A SO−8 FLAT LEAD CASE 488AA STYLE 2 B10100 A Y W ZZ A C B10100 AYWZZ C Not Used = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability V ORDERING INFORMATION A Device ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Package Shipping† MBR10100MFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel MBR10100MFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel NRVB10100MFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NRVB10100MFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA. © Semiconductor Components Industries, LLC, 2013 October, 2013 − Rev. 0 1 Publication Order Number: MBR10100MFS/D MBR10100MFS, NRVB10100MFS THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) Symbol Typ Max Unit RθJC − 1.8 °C/W 0.64 0.80 0.88 0.95 4 0.003 13 0.100 ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) (iF = 10 Amps, TJ = 125°C) (iF = 10 Amps, TJ = 25°C) vF Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR V mA 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. TYPICAL CHARACTERISTICS 100 TA = 175°C 150°C 1 125°C 25°C 0.1 0 IR, INSTANTANEOUS REVERSE CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 10 −40°C 0.4 0.2 10 TA = 175°C 150°C 125°C 1 25°C 0.1 0.6 0.8 1.0 0 0.2 −40°C 0.4 0.8 0.6 1.0 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E+00 IR, INSTANTANEOUS REVERSE CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 1.E+00 1.E−01 1.E−01 TA = 175°C 1.E−02 TA = 175°C 1.E−02 1.E−03 1.E−03 TA = 125°C 1.E−04 TA = 150°C TA = 125°C 1.E−04 1.E−05 TA = 150°C 1.E−05 TA = 25°C 1.E−06 TA = 25°C 1.E−06 1.E−07 1.E−07 1.E−08 1.E−08 1.E−09 1.E−09 TA = −40°C 1.E−10 1.E−11 TA = −40°C 1.E−10 1.E−11 0 10 20 30 40 50 60 70 80 90 100 0 10 20 30 40 50 60 70 80 90 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics http://onsemi.com 2 MBR10100MFS, NRVB10100MFS TYPICAL CHARACTERISTICS 18 TJ = 25°C 100 10 RqJC = 1.8°C/W dc 16 IF(AV), AVERAGE FORWARD CURRENT (A) C, JUNCTION CAPACITANCE (pF) 1,000 14 12 Square Wave 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 90 100 60 80 100 120 140 160 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating TO−220AB 180 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 8 IPK/IAV = 20 TJ = 175°C 7 IPK/IAV = 10 6 IPK/IAV = 5 5 4 3 Square Wave 2 dc 1 0 0 1 2 3 4 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation 100 R(t) (°C/W) 10 1 50% Duty Cycle 20% 10% 5% 2% 1% 0.1 Assumes 25°C ambient and soldered to a 600 mm2 − oz copper pad on PCB Single Pulse 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.1 0.01 PULSE TIME (sec) Figure 8. Thermal Response http://onsemi.com 3 1 10 100 1,000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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