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MBR1045MFST1G

MBR1045MFST1G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    DFN5_5X6MM

  • 描述:

    DIODE SCHOTTKY 45V 10A 5DFN

  • 数据手册
  • 价格&库存
MBR1045MFST1G 数据手册
MBR1045MFS, NRVB1045MFS Switch-mode Power Rectifiers These state−of−the−art devices have the following features: http://onsemi.com Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After • • • • • • Board Mounting Guardring for Stress Protection Low Forward Voltage Drop 150°C Operating Junction Temperature Wettable Flacks Option Available NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 45 VOLTS 5,6 1,2,3 MARKING DIAGRAM A 1 Mechanical Characteristics: • • • • • Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements SO−8 FLAT LEAD CASE 488AA STYLE 2 B1045 A Y W ZZ A A C B1045 AYWZZ C Not Used = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability Applications • Excellent Alternative to DPAK in Space−Constrained Automotive • • Applications Output Rectification in Compact Portable Consumer Applications Freewheeling Diode used with Inductive Loads ORDERING INFORMATION Device Package Shipping† MBR1045MFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel MBR1045MFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel NRVB1045MFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NRVB1045MFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 August, 2014 − Rev. 1 1 Publication Order Number: MBR1045MFS/D MBR1045MFS, NRVB1045MFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 45 Average Rectified Forward Current (Rated VR, TC = 142°C) IF(AV) 10 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 140°C) IFRM 20 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature TJ −55 to +150 °C EAS 150 mJ Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) V ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) Symbol Typ Max Unit RθJC − 1.7 °C/W 0.430 0.504 0.550 0.595 0.52 0.62 0.65 0.75 47 0.076 170 0.500 ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) (iF = 10 A, TJ = 125°C) (iF = 10 A, TJ = 25°C) (iF = 20 A, TJ = 125°C) (iF = 20 A, TJ = 25°C) vF Reverse Current (Note 1) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR Diode Capacitance CD V mA 300 pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 MBR1045MFS, NRVB1045MFS IF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 125°C 10 TA = 150°C TA = 25°C 1 TA = −40°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 100 10 TA = 125°C TA = 150°C TA = 25°C 1 TA = −40°C 0.1 0 0.3 0.4 0.5 0.6 0.7 0.8 Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E−01 0.9 1.E+00 TA = 150°C TA = 150°C 1.E−01 1.E−02 TA = 125°C 1.E−03 1.E−02 TA = 125°C 1.E−03 1.E−04 TA = 25°C 1.E−05 1.E−06 1.E−04 TA = −40°C TA = 25°C 1.E−05 1.E−07 TA = −40°C 1.E−06 1.E−08 1.E−07 1.E−09 1.E−10 0 10 20 30 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) 1.E−08 0 10000 TJ = 25°C 1000 100 0 10 20 30 VR, REVERSE VOLTAGE (V) 5 10 15 20 25 30 35 40 VR, INSTANTANEOUS REVERSE VOLTAGE (V) 45 Figure 4. Maximum Reverse Characteristics IF(AV), AVERAGE FORWARD CURRENT (A) Figure 3. Typical Reverse Characteristics C, JUNCTION CAPACITANCE (pF) 0.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.E+00 10 0.1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) IR, INSTANTANEOUS REVERSE CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) TYPICAL CHARACTERISTICS 40 20 RqJC = 1.7°C/W dc 15 SQUARE WAVE 10 5 0 0 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) 140 160 Figure 6. Current Derating TO−220AB Figure 5. Typical Junction Characteristics http://onsemi.com 3 MBR1045MFS, NRVB1045MFS TYPICAL CHARACTERISTICS PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 8 TJ = 150°C IPK/IAV = 20 7 IPK/IAV = 10 6 IPK/IAV = 5 5 4 3 2 Square Wave 1 dc 0 0 1 2 3 4 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation 100 R(t), (°C/W) 10 50% Duty Cycle 20% 10% 5% 2% Assumes 25°C ambient and soldered to a 600 mm2 − oz copper pad on PCB 1 1% 0.1 0.01 0.001 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (S) Figure 8. R(t) vs. Duty http://onsemi.com 4 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
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