MBR10H100CT

MBR10H100CT Switch-mode Power Rectifier 100 V, 10 A Features and Benefits • • • • • • • http://onsemi.com Low Forward Voltage: 0.61 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 10 A Total (5.0 A Per Diode Leg) Guard−Ring for Stress Protection Pb−Free Package is Available SCHOTTKY BARRIER RECTIFIER 10 AMPERES 100 VOLTS 1 2, 4 Applications 3 • Power Supply − Output Rectification • Power Management • Instrumentation MARKING DIAGRAM 4 Mechanical Characteristics: • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube MAXIMUM RATINGS TO−220AB CASE 221A PLASTIC 1 2 AYWW B10H100G AKA 3 A Y WW B10H100 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Polarity Designator Please See the Table on the Following Page ORDERING INFORMATION Device MBR10H100CT MBR10H100CTG Package Shipping TO−220 50 Units/Rail TO−220 (Pb−Free) 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2008 May, 2008 − Rev. 2 1 Publication Order Number: MBR10H100CT/D MBR10H100CT MAXIMUM RATINGS (Per Diode Leg) Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 100 V Average Rectified Forward Current (Rated VR) TC = 168°C IF(AV) 5.0 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 165°C IFRM 10 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 180 A TJ +175 °C Storage Temperature Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms WAVAL 100 mJ > 400 > 8000 V 2.0 60 °C/W Operating Junction Temperature (Note 1) Controlled Avalanche Energy (see test conditions in Figures 10 and 11) ESD Ratings: Machine Model = C Human Body Model = 3B THERMAL CHARACTERISTICS Maximum Thermal Resistance − Junction−to−Case − Junction−to−Ambient RqJC RqJA ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 2) (IF = 5.0 A, TC = 25°C) (IF = 5.0 A, TC = 125°C) (IF = 10 A, TC = 25°C) (IF = 10 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 125°C) (Rated DC Voltage, TC = 25°C) iR V 0.73 0.61 0.85 0.71 mA 4.5 0.0035 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBR10H100CT 100 TJ = 150°C 10 TJ = 125°C TJ = 25°C 1 0.1 0 0.2 0.4 0.6 1.0 0.8 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100 TJ = 150°C 10 TJ = 125°C TJ = 25°C 1 0.1 0 0.2 1.0 0.8 1.2 1.4 1.0E−01 IR, REVERSE CURRENT (AMPS) 1.0E−01 1.0E−02 TJ = 150°C 1.0E−02 TJ = 150°C 1.0E−03 1.0E−03 TJ = 125°C 1.0E−04 TJ = 125°C 1.0E−04 1.0E−05 1.0E−05 1.0E−06 TJ = 25°C 1.0E−06 TJ = 25°C 1.0E−07 1.0E−07 1.0E−08 0 20 40 60 80 100 20 40 60 80 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 10 dc SQUARE WAVE 5 110 1.0E−08 0 PFO, AVERAGE POWER DISSIPATION (WATTS) IF, AVERAGE FORWARD CURRENT (AMPS) 0.6 Figure 2. Maximum Forward Voltage IR, MAXIMUM REVERSE CURRENT (AMPS) Figure 1. Typical Forward Voltage 0 100 0.4 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 120 130 140 150 160 170 180 16 14 12 10 8 SQUARE 6 DC 4 2 0 0 5 10 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 100 15 MBR10H100CT 1000 C, CAPACITANCE (pF) TJ = 25°C 100 10 0 20 40 60 80 100 VR, REVERSE VOLTAGE (VOLTS) R(t), TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance 100 D = 0.5 10 0.2 0.1 1 0.05 P(pk) 0.01 t1 0.1 t2 SINGLE PULSE 0.01 0.000001 0.00001 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.1 0.01 1 10 100 1000 t1, TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 8. Thermal Response Junction−to−Ambient 10 1 D = 0.5 0.2 0.1 0.05 0.1 P(pk) 0.01 t1 t2 SINGLE PULSE 0.01 0.000001 0.00001 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) Figure 9. Thermal Response Junction−to−Case http://onsemi.com 4 10 100 1000 MBR10H100CT +VDD IL 10 mH COIL BVDUT VD MERCURY SWITCH ID ID IL DUT S1 VDD t0 Figure 10. Test Circuit t1 t2 t Figure 11. Current−Voltage Waveforms elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The unclamped inductive switching circuit shown in Figure 10 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive EQUATION (1): ǒ BV 2 DUT W [ 1 LI LPK AVAL 2 V BV DUT DD EQUATION (2): 2 W [ 1 LI LPK AVAL 2 SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. http://onsemi.com 5 Ǔ onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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