MBR10L60CT

MBR10L60CT, MBRF10L60CT SWITCHMODE™ Power Rectifier 60 V, 10 A Features and Benefits http://onsemi.com • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capability 10 A Total (5 A Per Diode Leg) Guard−Ring for Stress Protection These are Pb−Free Devices SCHOTTKY BARRIER RECTIFIER 10 AMPERES, 60 VOLTS 1 2, 4 3 Applications • Power Supply − Output Rectification • Power Management • Instrumentation Mechanical Characteristics: 4 MARKING DIAGRAMS • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight (Approximately): 1.9 Grams Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds TO−220AB CASE 221A PLASTIC 1 2 AYWW B10L60G AKA 3 MAXIMUM RATINGS Please See the Table on the Following Page TO−220 FULLPAK] CASE 221D STYLE 3 1 2 AYWW B10L60G AKA 3 A Y WW B10L60 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Device = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2008 December, 2008 − Rev. 0 1 Publication Order Number: MBR10L60CT/D MBR10L60CT, MBRF10L60CT MAXIMUM RATINGS (Per Diode Leg) Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 140°C (Per Leg) (Per Device) Symbol VRRM VRWM VR IF(AV) IFSM TJ Tstg Machine Model = C Human Body Model = 3B Value 60 Unit V 5 10 200 −55 to +150 −65 to +175 > 400 > 8000 A A °C °C V Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature (Note 1) Storage Temperature ESD Ratings: Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Rating Maximum Thermal Resistance MBR10L60CT MBRF10L60CT Junction−to−Case Junction−to−Ambient Junction−to−Case Junction−to−Ambient Symbol RqJC RqJA RqJC RqJA Value 2.8 70 5.7 75 Unit °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Rating Maximum Instantaneous Forward Voltage (Note 2) (IF = 5 A, TC = 25°C) (IF = 5 A, TC = 125°C) (IF = 10 A, TC = 25°C) (IF = 10 A, TC = 125°C) Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. Symbol vF Typ 0.49 0.43 0.60 0.53 77 33 Max 0.57 0.49 0.66 0.61 220 60 Unit V iR mA mA DEVICE ORDERING INFORMATION Device Order Number MBR10L60CTG MBRF10L60CTG Package Type TO−220AB (Pb−Free) TO−220FP (Pb−Free) Shipping 50 Units / Rail 50 Units / Rail http://onsemi.com 2 MBR10L60CT, MBRF10L60CT 100 IF, AVERAGE FORWARD CURRENT (A) 100 IF, AVERAGE FORWARD CURRENT (A) 125°C 10 10 125°C 150°C 1 1 150°C 85°C 85°C TJ = 25°C 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) TJ = 25°C 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage 1.0E+00 IR, REVERSE CURRENT (A) 1.0E−01 1.0E−02 1.0E−03 1.0E−04 1.0E−05 1.0E−06 0 TJ = 25°C 1.0E+00 IR, REVERSE CURRENT (A) 1.0E−01 1.0E−02 1.0E−03 1.0E−04 1.0E−05 1.0E−06 0 Figure 2. Maximum Forward Voltage 150°C 125°C 85°C 150°C 125°C 85°C TJ = 25°C 10 20 30 40 50 60 10 Figure 3. Typical Reverse Current 10 IF, AVERAGE FORWARD CURRENT (A) 9 8 7 6 5 4 3 2 1 SQUARE WAVE dc 6 IF, AVERAGE FORWARD CURRENT (A) 5 4 3 2 1 0 VR, REVERSE VOLTAGE (V) Figure 4. Maximum Reverse Current 20 30 40 VR, REVERSE VOLTAGE (V) 50 60 RqJC = 2.8°C/W RqJA = 70°C/W dc SQUARE WAVE 0 110 115 120 125 130 135 140 145 150 155 160 TC, CASE TEMPERATURE (°C) 0 20 40 60 80 100 120 140 160 TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Case per Leg MBR10L60CT Figure 6. Current Derating, Ambient per Leg MBR10L60CT http://onsemi.com 3 MBR10L60CT, MBRF10L60CT 10 IF, AVERAGE FORWARD CURRENT (A) 9 8 7 6 5 4 3 2 1 0 80 90 100 110 120 130 140 TC, CASE TEMPERATURE (°C) 150 160 SQUARE WAVE dc IF, AVERAGE FORWARD CURRENT (A) RqJC = 5.7°C/W 6 RqJA = 75°C/W 5 4 3 2 1 0 dc SQUARE WAVE 0 20 40 60 80 100 120 TA, AMBIENT TEMPERATURE (°C) 140 160 Figure 7. Current Derating, Case per Leg MBRF10L60CT PFO, AVERAGE POWER DISSIPATION (W) 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 10 0 dc SQUARE WAVE TJ = 150°C 10000 Figure 8. Current Derating, Ambient per Leg MBRF10L60CT TJ = 25°C C, CAPACITANCE (pF) 1000 100 10 20 30 40 50 60 IO, AVERAGE FORWARD CURRENT (A) VR, REVERSE VOLTAGE (V) Figure 9. Forward Power Dissipation Figure 10. Capacitance R(t), TRANSIENT THERMAL RESISTANCE 10 1 D= 0.5 0.2 0.1 0.05 P(pk) t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 0.01 0.1 0.01 0.000001 0.00001 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 10 100 1000 Figure 11. Thermal Response Junction−to−Case for MBR10L60CT http://onsemi.com 4 MBR10L60CT, MBRF10L60CT R(t), TRANSIENT THERMAL RESISTANCE 100 10 1 0.1 SINGLE PULSE 0.01 0.001 0.000001 D= 0.5 0.2 0.1 0.05 0.01 0.02 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) 1 10 100 1000 Figure 12. Thermal Response Junction−to−Ambient for MBR10L60CT R(t), TRANSIENT THERMAL RESISTANCE 10 D= 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 1 0.1 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 PULSE TIME (sec) 0.1 1 10 100 1000 Figure 13. Thermal Response Junction−to−Case for MBRF10L60CT R(t), TRANSIENT THERMAL RESISTANCE 100 10 1 0.1 0.05 0.02 0.01 D= 0.5 0.2 0.1 SINGLE PULSE 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 14. Thermal Response Junction−to−Ambient for MBRF10L60CT http://onsemi.com 5 MBR10L60CT, MBRF10L60CT PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B 4 SEATING PLANE F T C S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 Q 123 A U K H Z L V G D N R J STYLE 6: PIN 1. 2. 3. 4. http://onsemi.com 6 MBR10L60CT, MBRF10L60CT PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE J −T− F Q A 123 SEATING PLANE −B− C S U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 H K −Y− G N L D 3 PL M J R DIM A B C D F G H J K L N Q R S U 0.25 (0.010) B M Y STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE FULLPAK and SWITCHMODE are trademarks of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone : 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 MBR10L60CT/D