MBR1100

MBR1100 Axial Lead Rectifier These rectifiers employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. SCHOTTKY BARRIER RECTIFIER 1.0 AMPERE, 100 VOLTS Features • • • • • • • • • www.onsemi.com Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard−Ring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature High Surge Capacity These Devices are Pb−Free and are RoHS Compliant DO−41 AXIAL LEAD CASE 59 STYLE 1 Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: • MARKING DIAGRAM 260°C Max. for 10 Seconds Polarity: Cathode Indicated by Polarity Band A MBR1100 YYWW G G MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 100 V Average Rectified Forward Current (VR(equiv) ≤ 0.2 VR (dc), RqJA = 50°C/W, P.C. Board Mounting, [see Note 3], TA = 120°C) IO 1.0 A Peak Repetitive Forward Current (VR(equiv) ≤ 0.2 VR (dc), RqJA = 50°C/W, P.C. Board Mounting, [see Note 3], TA = 110°C) IFRM 2.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Operating and Storage Junction Temperature Range (Note 1) Voltage Rate of Change (Rated VR) ORDERING INFORMATION 50 A TJ, Tstg −65 to +175 °C dv/dt 10 V/ns Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. © Semiconductor Components Industries, LLC, 2016 February, 2016 − Rev. 7 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 1 Package Shipping† MBR1100G Axial Lead (Pb−Free) 1000 Units/Bag MBR1100RLG Axial Lead (Pb−Free) 5000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MBR1100/D MBR1100 THERMAL CHARACTERISTICS (See Note 4) Characteristic Symbol Max Unit RqJA See Note 3 °C/W Symbol Max Unit Thermal Resistance, Junction−to−Ambient ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 1 A, TL = 25°C) (iF = 1 A, TL = 100°C) VF Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2) (TL = 25°C) (TL = 100°C) iR mA 0.5 5.0 Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 20 1K 400 200 100 40 20 10 10 TJ = 150°C 5.0 IR , REVERSE CURRENT ( mA) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 2. V 0.79 0.69 100°C 2.0 25°C 1.0 0.5 0.2 0.1 0.05 TJ = 150°C 125°C 100°C 4.0 2.0 1.0 0.4 0.2 0.1 0.04 0.02 0.01 0.02 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 0 10 20 30 40 50 60 70 90 80 vF, INSTANTANEOUS VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current { 100 4.0 3.0 dc 2.0 SQUARE WAVE 1.0 0 0 20 40 60 80 100 120 140 160 180 200 PF(AV) , AVERAGE POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) { The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 4.0 3.0 SQUARE WAVE dc 2.0 1.0 0 0 1.0 2.0 3.0 4.0 TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 3. Current Derating (Mounting Method 3 per Note 3) Figure 4. Power Dissipation www.onsemi.com 2 5.0 MBR1100 NOTE 4 — THERMAL CIRCUIT MODEL: (For heat conduction through the leads) 150 C, CAPACITANCE (pF) 100 90 80 70 60 50 RqS(A) RqL(A) RqJ(A) TA(A) TJ = 25°C fTEST = 1 MHz RqL(K) RqJ(K) RqS(K) TA(K) PD TL(A) TC(A) TJ TC(K) TL(K) 40 30 Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heat sink. Terms in the model signify: 20 15 0 10 30 20 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Typical Capacitance TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RqS = Thermal Resistance, Heat Sink to Ambient RqL = Thermal Resistance, Lead to Heat Sink RqJ = Thermal Resistance, Junction to Case PD = Power Dissipation NOTE 3 — MOUNTING DATA: Data shown for thermal resistance junction−to−ambient (RqJA) for the mounting shown is to be used as a typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. (Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RqL = 100°C/W/in typically and 120°C/W/in maximum. RqJ = 36°C/W typically and 46°C/W maximum. Typical Values for RqJA in Still Air Lead Length, L (in) Mounting Method 1/8 1/4 1/2 3/4 1 52 65 72 85 °C/W 2 67 80 87 100 °C/W 3 — L Mounting Method 2 L Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 5) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. Mounting Method 3 ÉÉ ÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉ ÉÉ ÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉ L NOTE 5 — HIGH FREQUENCY OPERATION: °C/W 50 Mounting Method 1 P.C. Board with 1−1/2″ x 1−1/2″ copper surface. RqJA P.C. Board with 1−1/2″ x 1−1/2″ copper surface. L = 3/8″ BOARD GROUND PLANE L www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS AXIAL LEAD CASE 59−10 ISSUE U DATE 15 FEB 2005 B K STYLE 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY 4. POLARITY DENOTED BY CATHODE BAND. 5. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. D STYLE 2 F A SCALE 1:1 POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) F K DIM A B D F K INCHES MIN MAX 0.161 0.205 0.079 0.106 0.028 0.034 −−− 0.050 1.000 −−− MILLIMETERS MIN MAX 4.10 5.20 2.00 2.70 0.71 0.86 −−− 1.27 25.40 −−− GENERIC MARKING DIAGRAM* STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE STYLE 2: NO POLARITY A xxx xxx YYWW STYLE 1 xxx A YY WW A xxx xxx YYWW STYLE 2 = Specific Device Code = Assembly Location = Year = Work Week *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98ASB42045B AXIAL LEAD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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