MBR120ESFT1
Surface Mount
Schottky Power Rectifier
Plastic SOD−123 Package
This device uses the Schottky Barrier principle with a large area
metal−to−silicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
20 VOLTS
Features
•
•
•
•
•
•
•
Guardring for Stress Protection
Low Leakage
150°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Package Designed for Optimal Automated Board Assembly
ESD Ratings: Machine Model, C
ESD Ratings: Human Body Model, 3B
Pb−Free Packages are Available
SOD−123FL
CASE 498
PLASTIC
MARKING DIAGRAM
L2EMG
G
Mechanical Characteristics
• Reel Options: MBR120ESFT1 = 3,000 per 7″ reel/8 mm tape
•
•
•
•
•
•
MBR120ESFT3 = 10,000 per 13″ reel/8 mm tape
Device Marking: L2E
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
L2E = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MBR120ESFT1
Package
Shipping †
SOD−123FL 3000/Tape & Reel
MBR120ESFT1G SOD−123FL 3000/Tape & Reel
(Pb−Free)
MBR120ESFT3
SOD−123FL 10000/Tape & Reel
MBR120ESFT3G SOD−123FL 10000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
July, 2005 − Rev. 2
1
Publication Order Number:
MBR120ESFT1/D
MBR120ESFT1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
20
V
IO
1.0
A
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TL = 125°C)
IFRM
2.0
A
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
40
A
Storage Temperature
Tstg
−65 to 150
°C
Operating Junction Temperature
TJ
−65 to 150
°C
dv/dt
10,000
V/ms
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (At Rated VR, TL = 140°C)
Voltage Rate of Change (Rated VR, TJ = 25°C)
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Thermal Resistance − Junction−to−Lead (Note 1)
Thermal Resistance − Junction−to−Lead (Note 2)
Thermal Resistance − Junction−to−Ambient (Note 1)
Thermal Resistance − Junction−to−Ambient (Note 2)
Symbol
Value
Unit
Rtjl
Rtjl
Rtja
Rtja
26
21
325
82
°C/W
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm2).
ELECTRICAL CHARACTERISTICS
VF
Maximum Instantaneous Forward Voltage (Note 3), See Figure 2
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 2.0 A)
IR
Maximum Instantaneous Reverse Current (Note 3), See Figure 4
(VR = 20 V)
(VR = 10 V)
(VR = 5.0 V)
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%.
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2
TJ = 25°C
TJ = 100°C
0.455
0.530
0.595
0.360
0.455
0.540
TJ = 25°C
TJ = 100°C
10
1.0
0.5
1600
500
300
V
mA
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
MBR120ESFT1
10
TJ = 150°C
TJ = 25°C
TJ = 100°C
TJ = −40°C
1.0
0.1
0.2
0.4
0.6
0.8
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
TJ = 150°C
TJ = 100°C
1.0
TJ = 25°C
0.1
0.2
100E−3
IR, REVERSE CURRENT (AMPS)
0.6
0.8
Figure 2. Maximum Forward Voltage
IR, MAXIMUM REVERSE CURRENT (AMPS)
Figure 1. Typical Forward Voltage
100E−3
10E−3
1E−3
TJ = 150°C
100E−6
TJ = 100°C
1E−6
TJ = 25°C
5.0
10
15
TJ = 100°C
10E−6
TJ = 25°C
1E−6
20
10E−9
0
5.0
10
15
20
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
1.6
1.4
PFO, AVERAGE DISSIPATION (WATTS)
VR, REVERSE VOLTAGE (VOLTS)
dc
freq = 20 kHz
SQUARE
WAVE
1.2
1.0
Ipk/Io = p
0.8
Ipk/Io = 5
0.6
Ipk/Io = 10
0.4
Ipk/Io = 20
0.2
0
45
1E−3
VR, REVERSE VOLTAGE (VOLTS)
1.8
25
TJ = 150°C
100E−9
10E−9
0
10E−3
100E−6
10E−6
100E−9
IO, AVERAGE FORWARD CURRENT (AMPS)
0.4
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
65
85
105
125
145
165
0.7
dc
0.6
Ipk/Io = p
SQUARE
WAVE
0.5
Ipk/Io = 5
0.4
Ipk/Io = 10
0.3
Ipk/Io = 20
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
TL, LEAD TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
1.6
MBR120ESFT1
1000
155
TJ, DERATED OPERATING
TEMPERATURE (°C)
C, CAPACITANCE (pF)
153
TJ = 25°C
100
151
RqJA = 25.6°C/W
149
130°C/W
147
145
235°C/W
143
324.9°C/W
141
139
400°C/W
137
10
135
0
2.0
4.0
6.0
8.0
10
12
14
16
18
20
0
2.0
4.0
6.0
8.0
10
12
14
16
18
VR, REVERSE VOLTAGE (VOLTS)
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
Figure 8. Typical Operating Temperature
Derating*
20
r(t), TRANSIENT THERMAL RESISTANCE
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ may be calculated from the equation:
TJ = TJmax − r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
1000
D = 0.5
100
0.2
0.1
0.05
P(pk)
10
0.01
t1
t2
DUTY CYCLE, D = t1/t2
1
SINGLE PULSE
qJA = 321.8 °C/W
Test Type > Min Pad < Die Size 38x38 @ 75% mils
0.1
0.000001 0.00001
0.0001
0.001
0.01
0.1
t1, TIME (sec)
Figure 9. Thermal Response
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4
1
10
100
1000
MBR120ESFT1
PACKAGE DIMENSIONS
SOD−123LF
CASE 498−01
ISSUE A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.
4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT
SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM
FROM THE LEAD TIP.
E
q
D
DIM
A
A1
b
c
D
E
L
HE
q
A1
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
L
b
MIN
0.90
0.00
0.70
0.10
1.50
2.50
0.55
3.40
0°
MILLIMETERS
NOM
MAX
0.95
1.00
0.05
0.10
0.90
1.10
0.15
0.20
1.65
1.80
2.70
2.90
0.75
0.95
3.60
3.80
8°
−
HE
q
c
SOLDERING FOOTPRINT*
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
1.22
0.048
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
MIN
0.035
0.000
0.028
0.004
0.059
0.098
0.022
0.134
0°
INCHES
NOM
0.037
0.002
0.035
0.006
0.065
0.106
0.030
0.142
−
MAX
0.039
0.004
0.043
0.008
0.071
0.114
0.037
0.150
8°
MBR120ESFT1
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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Email: orderlit@onsemi.com
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ON Semiconductor Website: http://onsemi.com
Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
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MBR120ESFT1/D
