MBR120VLSFT3

MBR120VLSF, NRVB120VLSF Schottky Power Rectifier, Surface Mount 1.0 A, 20 V, SOD-123 Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC −DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS SOD−123FL CASE 498 Features • • • • • • • • Guardring for Stress Protection Optimized for Very Low Forward Voltage 125°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Package Designed for Optimal Automated Board Assembly ESD Ratings: Machine Model, C; Human Body Model, 3B NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics • Reel Options: MBR120VLSFT1G = 3,000 per 7″ reel/8 mm tape • • • • • • • MBR120VLSFT3G = 10,000 per 13″ reel/8 mm tape Device Marking: L2V Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements © Semiconductor Components Industries, LLC, 2014 October, 2014 − Rev. 4 1 MARKING DIAGRAM L2VMG G L2V M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† SOD−123FL (Pb−Free) 3000 / Tape & Reel NRVB120VLSFT1G SOD−123FL (Pb−Free) 3000 / Tape & Reel MBR120VLSFT3G 10000 / Tape & Reel Device MBR120VLSFT1G SOD−123FL (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MBR120VLSFT1/D MBR120VLSF, NRVB120VLSF MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 20 V Average Rectified Forward Current (Rated VR) TL = 119°C IF(AV) 1.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 45 A Storage Temperature Range Tstg −65 to +125 °C Operating Junction Temperature TJ −65 to +125 °C dv/dt 1000 V/ms Voltage Rate of Change (Rated VR) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Lead (Note 1) Thermal Resistance − Junction−to−Lead (Note 2) Thermal Resistance − Junction−to−Ambient (Note 1) Thermal Resistance − Junction−to−Ambient (Note 2) 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2). Symbol Value Unit Rtjl Rtjl Rtja Rtja 26 21 325 82 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 3) (IF = 0.1 A) (IF = 0.5 A) (IF = 1.0 A) VF Maximum Instantaneous Reverse Current (Note 3) (Rated DC Voltage) IR TJ = 255C TJ = 855C 0.275 0.315 0.340 0.205 0.270 0.300 0.60 15 Unit V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBR120VLSF, NRVB120VLSF 10 TJ = 125°C TJ = 85°C TJ = 25°C 1 TJ = −55°C 0.1 0 0.1 0.2 0.4 0.3 0.5 0.6 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 TJ = 125°C 1 TJ = 85°C TJ = 25°C 0.1 0.4 0.5 IR, MAXIMUM REVERSE CURRENT (AMPS) Figure 2. Maximum Forward Voltage 100E−3 100E−3 IR, REVERSE CURRENT (AMPS) 0.3 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage TJ = 125°C 10E−3 TJ = 85°C 1E−3 TJ = 25°C 100E−6 0 5 10 20 15 10E−3 TJ = 85°C 1E−3 TJ = 25°C 10E−6 0 5 10 15 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current freq = 20 kHz dc 1.6 1.4 PFO, AVERAGE POWER DISSIPATION (WATTS) VR, REVERSE VOLTAGE (VOLTS) 1.8 SQUARE WAVE 1.2 1.0 Ipk/Io = p 0.8 Ipk/Io = 5 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 25 TJ = 125°C 100E−6 10E−6 IO, AVERAGE FORWARD CURRENT (AMPS) 0.2 0.1 45 65 85 105 125 TL, LEAD TEMPERATURE (°C) 0.5 dc SQUARE WAVE Ipk/Io = p 0.4 Ipk/Io = 5 0.3 Ipk/Io = 10 0.2 Ipk/Io = 20 0.1 0 0 Figure 5. Current Derating 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 6. Forward Power Dissipation http://onsemi.com 3 1.6 MBR120VLSF, NRVB120VLSF 500 125 120 TJ, DERATED OPERATING TEMPERATURE (°C) C, CAPACITANCE (pF) TJ = 25°C 400 300 200 100 0 0 2 4 6 8 10 12 14 16 18 115 RqJA = 25.6°C/W 110 105 130°C/W 100 95 90 235°C/W 85 80 324.9°C/W 75 70 65 400°C/W 0 20 2.0 4.0 6.0 8.0 10 12 14 16 18 VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* 20 r(t), TRANSIENT THERMAL RESISTANCE * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. 1000 D = 0.5 100 0.2 0.1 0.05 P(pk) 10 0.01 t1 t2 1 DUTY CYCLE, D = t1/t2 SINGLE PULSE qJA = 321.8 °C/W Test Type > Min Pad < Die Size 38x38 @ 75% mils 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 t1, TIME (sec) Figure 9. Thermal Response http://onsemi.com 4 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123FL CASE 498 ISSUE D DATE 10 MAY 2013 SCALE 4:1 E D q 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. 2 POLARITY INDICATOR OPTIONAL AS NEEDED A END VIEW TOP VIEW q HE SIDE VIEW 2X b INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 − MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8° (Note: Microdot may be in either location) 4.20 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0° XXX = Specific Device Code M = Date Code G = Pb−Free Package RECOMMENDED SOLDERING FOOTPRINT* 1.22 MILLIMETERS NOM MAX 0.95 0.98 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8° − XXXMG G L BOTTOM VIEW 2X MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0° GENERIC MARKING DIAGRAM* c 2X A1 DIM A A1 b c D E L HE q *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2X ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 1.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON11184D SOD−123FL Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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