MBR130LSFT1

MBR130LSFT1G Schottky Power Rectifier, Surface Mount 1.0 A, 30 V, SOD-123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC −DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS SOD−123FL CASE 498 Features • • • • • • Guardring for Stress Protection Low Forward Voltage 125°C Operating Junction Temperature Epoxy Meets UL 94 V−0 Package Designed for Optimal Automated Board Assembly ESD Ratings: Machine Model, C Human Body Model, 3B • NRVB Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant • Reel Options: MBR130LSFT1G = 3,000 per 7 in reel/8 mm tape Device Marking: L3L Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements © Semiconductor Components Industries, LLC, 2014 July, 2014 − Rev. 4 L3LMG G L3L = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Mechanical Characteristics • • • • • • • MARKING DIAGRAM 1 MBR130LSFT1G Package Shipping† SOD−123FL 3000/Tape & Reel (Pb−Free) NRVB130LSFT1G SOD−123FL 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MBR130LSFT1/D MBR130LSFT1G MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 30 V IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TL = 110°C) IFRM 2.0 A Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 40 A Storage Temperature Tstg −55 to 150 °C Operating Junction Temperature TJ −55 to 125 °C dv/dt 10,000 V/ms Rtjl Rtjl Rtja Rtja 26 21 325 82 °C/W Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 117°C) Voltage Rate of Change (Rated VR, TJ = 25°C) THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Lead (Note 2) Thermal Resistance, Junction−to−Ambient (Note 1) Thermal Resistance, Junction−to−Ambient (Note 2) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2). ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 3) (IF = 0.1 A) (IF = 0.7 A) (IF = 1.0 A) IR Maximum Instantaneous Reverse Current (Note 3) (VR = 30 V) TJ = 25°C TJ = 100°C 0.29 0.36 0.38 0.18 0.27 0.30 TJ = 25°C TJ = 100°C 1.0 25 V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 MBR130LSFT1G TYPICAL CHARACTERISTICS TJ = 125°C TJ = 100°C TJ = 25°C 0.1 0.10 TJ = −55°C 0.20 0.30 0.60 0.50 0.40 0.70 1 T = 125°C J TJ = 100°C 0.1 0.10 0.80 0.30 0.20 0.50 0.40 0.70 0.60 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage TJ = 125°C 10E−3 TJ = 25°C 10E−6 1E−6 TJ = −55°C 100E−9 TJ = 125°C 10E−3 TJ = 100°C 1E−3 TJ = 25°C 100E−6 10E−9 1E−9 1E+0 100E−3 TJ = 100°C 1E−3 100E−6 0 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 TJ = −55°C 10E−6 0 10 20 VR, REVERSE VOLTAGE (VOLTS) 1.8 freq = 20 kHz dc 1.6 1.4 SQUARE WAVE 1.2 1.0 Ipk/IO = p 0.8 Ipk/IO = 5 0.6 Ipk/IO = 10 0.4 Ipk/IO = 20 0.2 0 25 45 65 85 105 30 Figure 4. Maximum Reverse Current 125 145 TL, LEAD TEMPERATURE (°C) PFO, AVERAGE POWER DISSIPATION (WATTS) Figure 3. Typical Reverse Current IO, AVERAGE FORWARD CURRENT (AMPS) TJ = −55°C TJ = 25°C VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100E−3 IR, REVERSE CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 1 10 IR, MAXIMUM REVERSE CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 0.6 0.5 Ipk/IO = p 0.4 dc SQUARE WAVE Ipk/IO = 5 Ipk/IO = 10 0.3 Ipk/IO = 20 0.2 0.1 0 0 Figure 5. Current Derating 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 6. Forward Power Dissipation http://onsemi.com 3 1.8 MBR130LSFT1G C, CAPACITANCE (pF) 1000 TJ, DERATED OPERATING TEMPERATURE (°C) TYPICAL CHARACTERISTICS TJ = 25 °C 100 10 0 5 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) 30 125 RqJA = 25.6 °C/W 120 115 110 105 RqJA = 130 °C/W 100 95 90 RqJA = 235 °C/W 85 80 75 70 65 RqJA = 324.9 °C/W RqJA = 400 °C/W 0 r(t), TRANSIENT THERMAL RESISTANCE Figure 7. Capacitance 2 4 6 8 10 12 14 16 VR, DC REVERSE VOLTAGE (VOLTS) 18 20 Figure 8. Typical Operating Temperature Derating 1000 D = 0.5 100 0.2 0.1 0.05 P(pk) 10 0.01 t1 t2 1 DUTY CYCLE, D = t1/t2 SINGLE PULSE qJA = 321.8 °C/W Test Type > Min Pad < Die Size 38x38 @ 75% mils 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 t1, TIME (sec) Figure 9. Thermal Response http://onsemi.com 4 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123FL CASE 498 ISSUE D DATE 10 MAY 2013 SCALE 4:1 E D q 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. 2 POLARITY INDICATOR OPTIONAL AS NEEDED A END VIEW TOP VIEW q HE SIDE VIEW 2X b INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 − MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8° (Note: Microdot may be in either location) 4.20 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0° XXX = Specific Device Code M = Date Code G = Pb−Free Package RECOMMENDED SOLDERING FOOTPRINT* 1.22 MILLIMETERS NOM MAX 0.95 0.98 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8° − XXXMG G L BOTTOM VIEW 2X MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0° GENERIC MARKING DIAGRAM* c 2X A1 DIM A A1 b c D E L HE q *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2X ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 1.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON11184D SOD−123FL Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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