MBR130T3

MBR130T1, MBR130T3 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Features http://onsemi.com • • • • • • • SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 30 VOLTS Guardring for Stress Protection Low Forward Voltage 125°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Package Designed for Optimal Automated Board Assembly ESD Ratings: Machine Model, C; Human Body Model, 3 Pb−Free Packages are Available SOD−123 CASE 425 STYLE 1 Mechanical Characteristics • Reel Options: MBR130T1 = 3,000 per 7 in reel/8 mm tape • • • • • • MBR130T3 = 10,000 per 13 in reel/8 mm tape Device Marking: S3 Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds MARKING DIAGRAM 1 S3MG G S3 = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device MBR130T1 MBR130T1G MBR130T3 MBR130T3G Package SOD−123 SOD−123 (Pb−Free) SOD−123 SOD−123 (Pb−Free) Shipping † 3000/Tape & Reel 3000/Tape & Reel 10,000/Tape & Reel 10,000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 1 July, 2005 − Rev. 2 Publication Order Number: MBR130T1/D MBR130T1, MBR130T3 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TL = 65°C Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) Storage Temperature Range Operating Junction Temperature Voltage Rate of Change (Rated VR) Symbol VRRM VRWM VR IF(AV) 1.0 IFSM Tstg TJ dv/dt 5.5 −65 to +125 −65 to +125 1000 A °C °C V/ms Value 30 Unit V A THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Note 1) Symbol RθJA Value 230 Unit °C/W Thermal Resistance, Junction to Lead (Note 1) RθJL 108 °C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−4 or FR−5 = 3.5 × 1.5 inches using a 1 inch Cu pad. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 2) (IF = 0.1 A, TJ = 25°C) (IF = 0.7 A, TJ = 25°C) (IF = 1.0 A, TJ = 25°C) Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (VR = 5 V, TC = 25°C) 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2%. Symbol VF − − 0.47 IR 60 10 0.35 0.45 − mA Typ Max Unit V http://onsemi.com 2 MBR130T1, MBR130T3 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 1 TJ = 125°C 1 TJ = 125°C 75°C 0.2 0.25 0.3 0.35 25°C 0.4 0.45 0.5 0.55 0.6 0.65 75°C 0.2 0.25 0.3 25°C 0.4 0.45 0.5 0.55 0.6 0.65 0.1 0.1 0.35 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Maximum Forward Voltage 0.01 IR, REVERSE CURRENT (AMPS) TJ = 125°C C, CAPACITANCE (pF) 0.001 75°C 200 180 160 140 120 100 80 60 40 20 0 5 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) 30 0 0 Figure 2. Typical Forward Voltage 0.0001 0.00001 25°C 0.000001 0.0000001 5 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) 35 Figure 3. Typical Reverse Current IF(AV), AVERAGE FORWARD CURRENT (AMPS) 1.8 1.6 dc 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 TL, LEAD TEMPERATURE (°C) 120 SQUARE WAVE RATED VOLTAGE APPLIED 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 Figure 4. Typical Capacitance PF(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS) SQUARE WAVE dc 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating, Lead, RqJL = 1085C/W Figure 6. Forward Power Dissipation http://onsemi.com 3 MBR130T1, MBR130T3 PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE E D A A1 HE 2.36 0.093 4.19 0.165 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan : ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 4 ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ 2 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A A1 b c D E HE L MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 −−− −−− 0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 −−− −−− 0.25 MIN 0.037 0.000 0.020 −−− 0.055 0.100 0.140 0.010 INCHES NOM 0.046 0.002 0.024 −−− 0.063 0.106 0.145 −−− MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 −−− E L C STYLE 1: PIN 1. CATHODE 2. ANODE b SOLDERING FOOTPRINT* 0.91 0.036 1.22 0.048 SCALE 10:1 mm inches MBR130T1/D