MBR140ESFT1G

DATA SHEET www.onsemi.com Surface Mount Schottky Power Rectifier Plastic SOD−123 Package MBR140ESF, NRVB140ESF SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 40 VOLTS This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. Features • • • • • • • • Guardring for Stress Protection Low Reverse Leakage 175°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Package Designed for Optimal Automated Board Assembly ESD Rating: ♦ Human Body Model = 3B ♦ Machine Model = M4 NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant* Mechanical Characteristics • • • • • • Device Marking: E4F Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds SOD−123FL CASE 498 MARKING DIAGRAM E4FMG G E4F M G = Specific Device Code = Date Code = Pb−Free Package) (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† MBR140ESFT1G SOD−123FL (Pb−Free) 3,000 / Tape & Reel ** MBR140ESFT3G SOD−123FL (Pb−Free) 10,000 / Tape & Reel *** NRVB140ESFT1G SOD−123FL (Pb−Free) 3,000 / Tape & Reel ** NRVB140ESFT3G SOD−123FL (Pb−Free) 10,000 / Tape & Reel *** †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ** 8 mm Tape, 7” Reel *** 8 mm Tape, 13” Reel *For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 October, 2021 − Rev. 4 1 Publication Order Number: MBR140ESF/D MBR140ESF, NRVB140ESF MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 40 V IO 1.0 A Peak Repetitive Forward Current IFRM 2.0 A Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM Storage Temperature Tstg −55 to 175 °C Operating Junction Temperature TJ −55 to 175 °C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current 30 A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Lead (Note 2) Thermal Resistance, Junction−to−Ambient (Note 1) Thermal Resistance, Junction−to−Ambient (Note 2) Symbol Value Unit Rtjl Rtjl Rtja Rtja 26 21 325 82 °C/W Symbol Value Unit VF TJ = 25°C V 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2). ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) (IF = 1.0 A) 0.56 IR Maximum Instantaneous Reverse Current (Note 3) (VR = 40 V) TJ = 25°C 30 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%. www.onsemi.com 2 mA MBR140ESF, NRVB140ESF TYPICAL CHARACTERISTICS IF, INSTANTANEOUS FORWARD CURRENT (A) 10.0 1.0 TA = 125°C TA = 150°C TA = 85°C IR, INSTANTANEOUS REVERSE CURRENT (A) 0.10 0.0 TA = 25°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 TA = 150°C 1.0 TA = 125°C TA = 85°C TA = 25°C 0.10 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.0 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics IR, INSTANTANEOUS REVERSE CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 10.0 1.E−01 TA = 150°C 1.E−03 1.E−02 TA = 125°C 1.E−04 TA = 125°C 1.E−03 TA = 85°C 1.E−05 TA = 85°C 1.E−04 TA = 25°C 1.E−06 1.E−07 TA = 150°C 0 TA = 25°C 1.E−05 5 10 15 20 25 30 35 VR, INSTANTANEOUS REVERSE VOLTAGE (V) 40 1.E−06 0 2.00 TJ = 25°C 100 40 Figure 4. Maximum Reverse Characteristics RqJA = 82°C/W 1.80 IF(AV), AVERAGE FORWARD CURRENT (A) C, JUNCTION CAPACITANCE (pF) Figure 3. Typical Reverse Characteristics 5 10 15 20 25 30 35 VR, INSTANTANEOUS REVERSE VOLTAGE (V) dc 1.60 1.40 1.20 SQUARE WAVE 1.00 0.80 0.60 0.40 0.20 10 1 0.00 10 VR, REVERSE VOLTAGE (V) 0 Figure 5. Typical Junction Capacitance 20 40 60 80 100 120 TC, CASE TEMPERATURE (°C) Figure 6. Current Derating, Case www.onsemi.com 3 140 MBR140ESF, NRVB140ESF TYPICAL CHARACTERISTICS PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 10 9 TA = 150°C IPK/IAV = 20 8 7 6 5 SQUARE WAVE 4 IPK/IAV = 10 3 2 IPK/IAV = 5 1 0 0.00 dc 0.20 0.40 0.60 0.80 1.00 1.20 1.40 IF(AV), AVERAGE FORWARD CURRENT (A) r(t), TRANSIENT THERMAL RESISTANCE Figure 7. Forward Power Dissipation 1000 D = 0.5 100 0.2 0.1 0.05 10 P(pk) 0.01 t1 t2 1 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.1 0.000001 0.00001 0.0001 Test Type > Min Pad < Die Size 38x38 @ 75% mils 0.001 0.01 0.1 t1, TIME (sec) Figure 8. Thermal Response www.onsemi.com 4 1 qJA = 321.8 °C/W 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123FL CASE 498 ISSUE D DATE 10 MAY 2013 SCALE 4:1 E D q 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. 2 POLARITY INDICATOR OPTIONAL AS NEEDED A END VIEW TOP VIEW q HE SIDE VIEW 2X b INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 − MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8° (Note: Microdot may be in either location) 4.20 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0° XXX = Specific Device Code M = Date Code G = Pb−Free Package RECOMMENDED SOLDERING FOOTPRINT* 1.22 MILLIMETERS NOM MAX 0.95 0.98 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8° − XXXMG G L BOTTOM VIEW 2X MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0° GENERIC MARKING DIAGRAM* c 2X A1 DIM A A1 b c D E L HE q *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2X ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 1.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON11184D SOD−123FL Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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