MBR140SFT1G

MBR140SF, NRVB140SF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package also provides an easy to work with alternative to leadless 34 package style. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 40 VOLTS SOD−123FL CASE 498 Features • • • • • • • • Guardring for Stress Protection Low Forward Voltage 125°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Package Designed for Optimal Automated Board Assembly ESD Rating: ♦ Human Body Model = 3B ♦ Machine Model = C NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics • • • • • • MARKING DIAGRAM L4FMG G L4F M G (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† MBR140SFT1G SOD−123FL (Pb−Free) 3,000 / Tape & Reel ** NRVB140SFT1G SOD−123FL (Pb−Free) 3,000 / Tape & Reel ** MBR140SFT3G SOD−123FL (Pb−Free) 10,000 / Tape & Reel *** NRVB140SFT3G SOD−123FL (Pb−Free) 10,000 / Tape & Reel *** Device Device Marking: L4F Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds = Specific Device Code = Date Code = Pb−Free Package) ** 8 mm Tape, 7” Reel *** 8 mm Tape, 13” Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 August, 2014 − Rev. 6 1 Publication Order Number: MBR140SFT1/D MBR140SF, NRVB140SF MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TL = 112°C) Symbol Value Unit VRRM VRWM VR 40 V IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TL = 95°C) IFRM A Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM Storage Temperature Tstg −55 to 150 °C Operating Junction Temperature TJ −55 to 125 °C dv/dt 10,000 V/ms 2.0 A 30 Voltage Rate of Change (Rated VR, TJ = 25°C) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Lead (Note 2) Thermal Resistance, Junction−to−Ambient (Note 1) Thermal Resistance, Junction−to−Ambient (Note 2) Symbol Value Unit Rtjl Rtjl Rtja Rtja 26 21 325 82 °C/W 1. Mounted with minimum recommended pad size, PC Board FR4. 2. Mounted with 1 in. copper pad (Cu area 700 mm2). ELECTRICAL CHARACTERISTICS Characteristic Symbol VF Maximum Instantaneous Forward Voltage (Note 3), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 3.0 A) IR Maximum Instantaneous Reverse Current (Note 3), See Figure 4 (VR = 40 V) (VR = 20 V) Value Unit TJ = 25°C TJ = 85°C 0.36 0.55 0.85 0.30 0.515 0.88 TJ = 25°C TJ = 85°C 0.5 0.15 25 18 V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBR140SF, NRVB140SF 100 10 TJ = 125°C 1.0 TJ = 85°C TJ = 25°C TJ = −40°C 0.1 0.1 0.3 0.5 0.7 0.9 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 1.0 TJ = 125°C TJ = 85°C 0.1 0.1 IR, MAXIMUM REVERSE CURRENT (AMPS) IR, REVERSE CURRENT (AMPS) TJ = 125°C 0.7 0.9 1.0E+0 100E−3 TJ = 85°C 100E−6 TJ = 25°C 10E−6 TJ = 85°C 10E−3 1.0E−3 TJ = 25°C 100E−6 1.0E−6 0 10 20 40 30 10E−6 0 10 VR, REVERSE VOLTAGE (VOLTS) freq = 20 kHz dc 1.6 1.4 SQUARE WAVE 1.2 1 Ipk/Io = p 0.8 Ipk/Io = 5 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 25 35 45 55 65 75 85 95 30 40 Figure 4. Maximum Reverse Current PFO, AVERAGE POWER DISSIPATION (WATTS) 1.8 20 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current IO, AVERAGE FORWARD CURRENT (AMPS) 0.5 Figure 2. Maximum Forward Voltage 100E−3 1.0E−3 0.3 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 10E−3 TJ = 25°C 105 115 125 TL, LEAD TEMPERATURE (°C) 1.0 0.9 0.8 Ipk/Io = 10 0.7 Ipk/Io = p SQUARE Ipk/Io = 5 WAVE Ipk/Io = 20 0.6 0.5 0.4 0.3 0.2 0.1 0 0 Figure 5. Current Derating 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 6. Forward Power Dissipation http://onsemi.com 3 dc 1.6 MBR140SF, NRVB140SF 1000 125 TJ, DERATED OPERATING TEMPERATURE (°C) C, CAPACITANCE (pF) RqJA = 25.6°C/W TJ = 25°C 100 115 130°C/W 105 324.9°C/W 95 85 235°C/W 75 65 55 10 0 5 10 15 20 30 25 35 0 40 5 10 15 20 25 30 35 VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* 40 r(t), TRANSIENT THERMAL RESISTANCE * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. 1000 D = 0.5 100 0.2 0.1 0.05 P(pk) 10 0.01 t1 t2 1 DUTY CYCLE, D = t1/t2 SINGLE PULSE qJA = 321.8 °C/W Test Type > Min Pad < Die Size 38x38 @ 75% mils 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 t1, TIME (sec) Figure 9. Thermal Response http://onsemi.com 4 1 10 100 1000 MBR140SF, NRVB140SF PACKAGE DIMENSIONS SOD−123FL CASE 498 ISSUE D q E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. D 1 2 DIM A A1 b c D E L HE q A1 POLARITY INDICATOR OPTIONAL AS NEEDED A END VIEW TOP VIEW q HE MILLIMETERS NOM MAX 0.95 0.98 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8° − MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0° INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 − MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8° c RECOMMENDED SOLDERING FOOTPRINT* SIDE VIEW 2X 2X MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0° L b 2X BOTTOM VIEW 1.22 ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 4.20 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 2X 1.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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