MBR1H100SFT3G

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MBR1H100SFT3G, NRVB1H100SFT3G Schottky Power Rectifier, Surface Mount 1.0 A, 100 V, SOD-123FL Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 100 VOLTS Features • • • • • • • • Guardring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Epoxy Meets UL 94 V−0 Package Designed for Optimal Automated Board Assembly ESD Ratings: Machine Model, C Human Body Model, 3B NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant SOD−123FL CASE 498 MARKING DIAGRAM L1HMG G L1H M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) Mechanical Characteristics • • • • • • • • Reel Options: MBR1H100SFT3G = 10,000 per 13 in reel/8 mm tape Device Marking: L1H Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy, Molded Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements © Semiconductor Components Industries, LLC, 2014 August, 2014 − Rev. 2 1 ORDERING INFORMATION Device Package Shipping† MBR1H100SFT3G SOD−123 (Pb−Free) 10000/Tape & Reel NRVB1H100SFT3G SOD−123 (Pb−Free) 10000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: MBR1H100SF/D MBR1H100SFT3G, NRVB1H100SFT3G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 162°C) Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage and Operating Junction Temperature Range (Note 1) Symbol Value Unit VRRM VRWM VR 100 V IO 1.0 A IFSM 50 A Tstg, TJ −65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) YJCL 23 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 85 °C/W Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 330 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 4) (IF = 1.0 A, TJ = 25°C) (IF = 2.0 A, TJ = 25°C) (IF = 1.0 A, TJ = 125°C) (IF = 2.0 A, TJ = 125°C) VF Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR V 0.76 0.84 0.61 0.68 40 0.5 mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board. 3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 MBR1H100SFT3G, NRVB1H100SFT3G TYPICAL CHARACTERISTICS 100 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 100 150°C 125°C 25°C 10 1 150°C 125°C 25°C 10 1 0.1 0.1 0 0.2 0.4 0.6 1.0 0.8 1.2 1.4 0 0.8 1.0 1.2 1.4 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.6 1 IR, REVERSE CURRENT (mA) 10 150°C 0.1 125°C 0.01 0.001 0.0001 0.00001 10 20 30 40 50 60 70 80 90 0.01 25°C 0.001 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current RqJL = 23°C/W dc 1.5 Square Wave 1.0 0.5 140 125°C 0.00001 0 100 2.0 0 135 0.1 0.0001 25°C 0 150°C 1 145 150 155 160 165 170 175 PFO, AVERAGE POWER DISSIPATION (W) IR, REVERSE CURRENT (mA) 0.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 10 IF(AV), AVERAGE FORWARD CURRENT (A) 0.4 0.2 1.0 TJ = 175°C Square Wave 0.8 dc 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 1.6 MBR1H100SFT3G, NRVB1H100SFT3G TYPICAL CHARACTERISTICS 140 TJ = 25°C C, CAPACITANCE (pF) 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (V) Figure 7. Capacitance 1000 R(t) (C/W) 100 10 50% (DUTY CYCLE) 25% 10% 5.0% 2.0% 1.0% 1.0 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 10 100 1000 PULSE TIME (s) Figure 8. Thermal Response, Junction−to−Ambient (20 mm2 pad) 100 50% (DUTY CYCLE) 25% R(t) (C/W) 10 10% 5.0% 2.0% 1.0 1.0% 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 PULSE TIME (s) Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad) http://onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123FL CASE 498 ISSUE D DATE 10 MAY 2013 SCALE 4:1 E D q 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. 2 POLARITY INDICATOR OPTIONAL AS NEEDED A END VIEW TOP VIEW q HE SIDE VIEW 2X b INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 − MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8° (Note: Microdot may be in either location) 4.20 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0° XXX = Specific Device Code M = Date Code G = Pb−Free Package RECOMMENDED SOLDERING FOOTPRINT* 1.22 MILLIMETERS NOM MAX 0.95 0.98 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8° − XXXMG G L BOTTOM VIEW 2X MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0° GENERIC MARKING DIAGRAM* c 2X A1 DIM A A1 b c D E L HE q *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2X ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 1.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON11184D SOD−123FL Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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