MBR2080CTG

MBR2080CTG, MBR2090CTG, MBR20100CTG Switch-mode Power Rectifiers This series uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: Features • • • • • • • • • • 20 A Total (10 A Per Diode Leg) Guard−Ring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Low Power Loss/High Efficiency High Surge Capacity Low Stored Charge Majority Carrier Conduction Shipped 50 units per plastic tube These Devices are Pb−Free and are RoHS Compliant* www.onsemi.com SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 80−100 VOLTS 1 2, 4 3 4 Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.9 grams (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • 1 Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 2 3 TO−220 CASE 221A STYLE 6 MARKING DIAGRAM AY WW B20x0G AKA A Y WW B20x0 x G AKA = Assembly Location = Year = Work Week = Device Code = 8, 9 or 10 = Pb−Free Device = Polarity Designator ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 1 1 See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: MBR20100CT/D MBR2080CTG, MBR2090CTG, MBR20100CTG MAXIMUM RATINGS (Per Diode Leg) MBR Symbol 2080CT 2090CT 20100CT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 80 90 100 V Average Rectified Forward Current (Rated VR) TC = 133°C IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 133°C IFRM 20 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 0.5 A Operating Junction Temperature (Note 1) TJ *65 to +175 °C Storage Temperature Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Rating Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Maximum Thermal Resistance Junction−to−Case Junction−to−Ambient Symbol Value Unit RqJC RqJA 2.0 60 °C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 10 Amps, TC = 125°C) (iF = 10 Amps, TC = 25°C) (iF = 20 Amps, TC = 125°C) (iF = 20 Amps, TC = 25°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TC = 125°C) (Rated dc Voltage, TC = 25°C) iR V 0.75 0.85 0.85 0.95 mA 6.0 0.1 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. ORDERING INFORMATION Device Package Shipping MBR2080CTG TO−220 (Pb−Free) 50 Units / Rail MBR2090CTG TO−220 (Pb−Free) 50 Units / Rail MBR20100CTG TO−220 (Pb−Free) 50 Units / Rail www.onsemi.com 2 10 50 TJ = 150°C 20 IR , REVERSE CURRENT (mA) 150°C 10 100°C 125°C 5.0 3.0 TJ = 25°C 1.0 1.0 125°C 0.1 100°C 0.01 0.001 25°C 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.8 0.7 0.0001 1.0 0.9 40 60 100 80 VR, REVERSE VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Per Diode Figure 2. Typical Reverse Current Per Diode I F(AV) , AVERAGE FORWARD CURRENT (AMPS) 20 RATED VOLTAGE APPLIED RqJC = 2°C/W dc 15 SQUARE WAVE 10 5.0 0 80 20 0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 100 120 140 160 20 (HEATSINK) RqJA = 16°C/W (NO HEATSINK) RqJA = 60°C/W 15 10 dc 5.0 SQUARE WAVE 0 180 0 20 60 40 IPK/IAV = 5.0 TA = 25°C IPK/IAV = p 16 IPK/IAV = 10 14 12 dc IPK/IAV = 20 8.0 SQUARE WAVE 6.0 4.0 2.0 0 0 2.0 100 120 140 160 180 Figure 4. Typical Current Derating, Ambient, Per Leg 20 10 80 TA, AMBIENT TEMPERATURE (°C) Figure 3. Typical Current Derating, Case, Per Leg 18 RATED VOLTAGE APPLIED dc TC, CASE TEMPERATURE (°C) AVERAGE POWER (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) MBR2080CTG, MBR2090CTG, MBR20100CTG 4.0 6.0 8.0 10 12 14 16 18 AVERAGE CURRENT (AMPS) Figure 5. Average Power Dissipation and Average Current www.onsemi.com 3 20 onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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