MBR3045STG

MBR3045ST, MBRB3045CT-1 Switch‐mode Power Rectifier Features and Benefits • Dual Diode Construction − Terminals 1 and 3 May Be Connected for • • • • http://onsemi.com Parallel Operation at Full Rating 45 V Blocking Voltage Low Forward Voltage Drop 175°C Operating Junction Temperature These are Pb-Free Devices SCHOTTKY BARRIER RECTIFIER 30 AMPERES 45 VOLTS Applications • Power Supply − Output Rectification • Power Management • Instrumentation 3 2, 4 1 Mechanical Characteristics • Case: Epoxy, Molded • Weight (Approximately): 1.9 Grams (TO−220) • • • MARKING DIAGRAMS 1.5 Grams (TO−262) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Epoxy Meets UL 94 V−0 @ 0.125 in 4 TO−220 CASE 221A STYLE 6 AYWW B3045G AKA I2PAK (TO−262) CASE 418D STYLE 3 AYWW B3045CTG AKA MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 45 V IF(AV) 30 15 A Peak Repetitive Forward Current, per Diode (Square Wave, VR = 45 V, 20 kHz) IFRM 30 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Current, per Diode (2.0 ms, 1.0 kHz) IRRM 2.0 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C Peak Surge Junction Temperature (Forward Current Applied) TJ(pk) 175 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Current (TC = 130°C) Per Device Per Diode September, 2014 − Rev. 9 2 3 4 12 3 A Y WW AKA G = Assembly Location = Year = Work Week = Polarity Designator = Pb−Free Device ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. © Semiconductor Components Industries, LLC, 2014 1 1 See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Publication Order Number: MBR3045ST/D MBR3045ST, MBRB3045CT−1 THERMAL CHARACTERISTICS (Per Diode) Characteristic Symbol Value Unit RθJC 1.5 °C/W Symbol Value Unit Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (Per Diode) Characteristic Instantaneous Forward Voltage (Note 2) (iF = 15 Amp, TC = 25°C) (iF = 15 Amp, TC = 125°C) (iF = 30 Amp, TC = 25°C) (iF = 30 Amp, TC = 125°C) vF Instantaneous Reverse Current (Note 2) (VR = 45 Volts, TC = 25°C) (VR = 45 Volts, TC = 125°C) IR V 0.62 0.57 0.76 0.72 mA 0.2 40 i F, INSTANTANEOUS FORWARD CURRENT (AMPS) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2 Pulse Test: Pulse Width = 300 μs, Duty Cycle ≤ 2.0% 1000 i F, MAXIMUM FORWARD CURRENT (AMPS) 1000 150°C 100 TJ = 125°C 10 1.0 25°C 0.1 150°C 100 TJ = 125°C 10 1.0 25°C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 0.2 0.4 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.8 0.6 TJ = 150°C 125°C 100°C 75°C 25°C 0 10 1.2 1.4 1.6 Figure 2. Maximum Reverse Current 200 100 40 20 10 4.0 2.0 1.0 0.4 0.2 0.1 0.04 0.02 0.01 0.004 0.002 1.0 vF, MAXIMUM FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage IR , REVERSE CURRENT (mA) 0 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current http://onsemi.com 2 50 1.8 I F(AV) , AVERAGE FORWARD CURRENT (AMPS) 24 dc 20 SQUARE WAVE 16 RATED VOLTAGE APPLIED RqJC = 1.1°C/W 12 8.0 4.0 0 110 120 130 140 150 24 RqJA = 16°C/W (With TO-220 Heat Sink) RqJA = 60°C/W (No Heat Sink) 20 dc 16 RATED VR APPLIED 12 SQUARE WAVE 8.0 dc 4.0 SQUARE WAVE 0 170 160 0 20 40 60 80 100 120 140 160 180 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 4. Current Derating, Case Figure 5. Current Derating, Ambient 10000 32 SQUARE WAVE I (RESISTIVELOAD) PK + p I AV 28 TJ = 25°C f = 1 MHz C, CAPACITANCE (pF) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) MBR3045ST, MBRB3045CT−1 24 I (CAPACITATIVELOAD) PK + 5.0 I 20 dc AV 16 10 12 20 1000 100 8.0 TJ = 125°C 4.0 0 10 0 4.0 8.0 12 16 20 24 28 32 36 40 0 IF, AVERAGE FORWARD CURRENT (AMPS) 10 20 30 VR, REVERSE VOLTAGE (V) Figure 7. Capacitance Figure 6. Forward Power Dissipation ORDERING INFORMATION Device Package Shipping MBR3045STG TO−220 (Pb−Free) 50 Units/Rail MBRB3045CT−1G TO−262 (Pb−Free) 50 Units/Rail http://onsemi.com 3 40 50 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS I2PAK (TO−262) CASE 418D−01 ISSUE D DATE 16 OCT 2007 C E V −B− SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 A W 1 2 DIM A B C D E F G H J K S V W 3 F −T− SEATING PLANE K S D 3 PL 0.13 (0.005) M T B STYLE 1: PIN 1. 2. 3. 4. DESCRIPTION: MILLIMETERS MIN MAX 8.51 9.65 9.65 10.31 4.06 4.70 0.66 0.89 1.14 1.40 3.10 REF 2.54 BSC 2.39 2.79 0.33 0.64 12.70 14.27 9.90 REF 1.14 1.78 13.25 14.00 J G DOCUMENT NUMBER: INCHES MIN MAX 0.335 0.380 0.380 0.406 0.160 0.185 0.026 0.035 0.045 0.055 0.122 REF 0.100 BSC 0.094 0.110 0.013 0.025 0.500 0.562 0.390 REF 0.045 0.070 0.522 0.551 BASE COLLECTOR EMITTER COLLECTOR 98ASB16716C I2PAK (TO−262) H M STYLE 2: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 3: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 4: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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