MBR30H30CTG

MBRB30H30CT-1G, NRVBB30H30CT-1G, MBR30H30CTG Switch-mode Power Rectifiers 30 V, 30 A www.onsemi.com SCHOTTKY BARRIER RECTIFIER 30 AMPERES, 30 VOLTS Features and Benefits • • • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 30 A Total (15 A Per Diode Leg) Guard−Ring for Stress Protection NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant 1 2, 4 3 4 MARKING DIAGRAMS I2PAK (TO−262) CASE 418D STYLE 3 Applications • Power Supply − Output Rectification • Power Management • Instrumentation 12 3 4 Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight: 1.5 Grams (I2PAK) (Approximately) • • AYWW B30H30G AKA 1.9 Grams (TO−220) (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds TO−220 CASE 221A STYLE 6 1 2 AYWW B30H30G AKA 3 A Y WW B30H30 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity ORDERING AND MARKING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 6 1 Publication Order Number: MBRB30H30CT−1/D MBRB30H30CT−1G, NRVBB30H30CT−1G, MBR30H30CTG MAXIMUM RATINGS (Per Diode Leg) Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 V Average Rectified Forward Current (Rated VR) TC = 138°C IF(AV) Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) IFRM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM Rating A 15 A 30 A 260 Operating Junction Temperature (Note 1) TJ −55 to +150 °C Storage Temperature Tstg *55 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms WAVAL 250 mJ Controlled Avalanche Energy (see test conditions in Figures 9 and 10) ESD Ratings: Machine Model = C Human Body Model = 3B V > 400 > 8000 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Rating Symbol Value RqJC RqJA 2.0 70 Symbol Value Unit °C/W Maximum Thermal Resistance Junction−to−Case Junction−to−Ambient ELECTRICAL CHARACTERISTICS (Per Diode Leg) Rating Maximum Instantaneous Forward Voltage (Note 2) (IF = 15 A, TC = 25°C) (IF = 15 A, TC = 125°C) (IF = 30 A, TC = 25°C) (IF = 30 A, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR Unit V 0.48 0.40 0.55 0.53 mA 0.8 130 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBRB30H30CT−1G, NRVBB30H30CT−1G, MBR30H30CTG 100 TJ = 125°C 10 TJ = 25°C 1 0.1 0 0.1 0.2 0.4 0.3 0.5 0.6 0.7 0.8 0.9 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100 TJ = 125°C 10 TJ = 25°C 1 0.1 0 0.1 1.0E−01 TJ = 125°C 0.7 0.8 0.9 1.0 TJ = 125°C 1.0E−02 1.0E−03 1.0E−03 TJ = 25°C 1.0E−04 10 5 15 1.0E−04 25 20 30 1.0E−05 0 TJ = 25°C 10 5 15 20 25 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 30 PFO, AVERAGE POWER DISSIPATION (WATTS) IF, AVERAGE FORWARD CURRENT (AMPS) 0.6 1.0E−01 1.0E−02 dc 25 SQUARE WAVE 15 10 5 0 100 0.5 1.0E−00 IR, REVERSE CURRENT (AMPS) 1.0E−00 20 0.4 0.3 Figure 2. Maximum Forward Voltage IR, MAXIMUM REVERSE CURRENT (AMPS) Figure 1. Typical Forward Voltage 1.0E−05 0 0.2 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 110 120 130 140 150 160 16 14 12 SQUARE 10 8 DC 6 4 2 0 0 5 10 15 20 TC, CASE TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation www.onsemi.com 3 30 25 MBRB30H30CT−1G, NRVBB30H30CT−1G, MBR30H30CTG 3000 TJ = 25°C C, CAPACITANCE (pF) 2500 2000 1500 1000 500 0 0 5 10 15 20 30 25 VR, REVERSE VOLTAGE (VOLTS) R(t), TRANSIENT THERMAL RESISTANCE Figure 7. Typical Capacitance 10 1 D = 0.5 0.2 0.1 0.05 P(pk) 0.1 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 t1, TIME (sec) Figure 8. Thermal Response Junction−to−Case www.onsemi.com 4 10 100 1000 MBRB30H30CT−1G, NRVBB30H30CT−1G, MBR30H30CTG +VDD IL 10 mH COIL BVDUT VD ID MERCURY SWITCH ID IL DUT S1 VDD t0 Figure 9. Test Circuit t1 t2 Figure 10. Current−Voltage Waveforms The unclamped inductive switching circuit shown in Figure 9 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). EQUATION (1): ǒ BV 2 DUT W [ 1 LI LPK AVAL 2 BV –V DUT DD Ǔ EQUATION (2): 2 W [ 1 LI LPK AVAL 2 ORDERING INFORMATION Device t Package Shipping MBRB30H30CT−1G TO−262 (Pb−Free) 50 Units / Rail NRVBB30H30CT−1G TO−262 (Pb−Free) 50 Units / Rail MBR30H30CTG TO−220 (Pb−Free) 50 Units / Rail www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS I2PAK (TO−262) CASE 418D−01 ISSUE D DATE 16 OCT 2007 C E V −B− SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 A W 1 2 DIM A B C D E F G H J K S V W 3 F −T− SEATING PLANE K S D 3 PL 0.13 (0.005) M T B STYLE 1: PIN 1. 2. 3. 4. DESCRIPTION: MILLIMETERS MIN MAX 8.51 9.65 9.65 10.31 4.06 4.70 0.66 0.89 1.14 1.40 3.10 REF 2.54 BSC 2.39 2.79 0.33 0.64 12.70 14.27 9.90 REF 1.14 1.78 13.25 14.00 J G DOCUMENT NUMBER: INCHES MIN MAX 0.335 0.380 0.380 0.406 0.160 0.185 0.026 0.035 0.045 0.055 0.122 REF 0.100 BSC 0.094 0.110 0.013 0.025 0.500 0.562 0.390 REF 0.045 0.070 0.522 0.551 BASE COLLECTOR EMITTER COLLECTOR 98ASB16716C I2PAK (TO−262) H M STYLE 2: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 3: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 4: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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