MBR30H80CTG

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Other names and brands may be claimed as the property of others. MBR30H80CT, MBRB30H80CT-1 SWITCHMODE™ Power Rectifier 80 V, 30 A http://onsemi.com Features and Benefits • • • • SCHOTTKY BARRIER RECTIFIER 30 AMPERES 80 VOLTS Low Power Loss/High Efficiency High Surge Capacity 30 A Total (15 A Per Diode Leg) These are Pb−Free Devices Applications 1 • Power Supply − Output Rectification • Power Management • Instrumentation 2, 4 3 • • • • • • MARKING DIAGRAM 4 Mechanical Characteristics: Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model = 3B Machine Model = C TO−220AB CASE 221A PLASTIC 1 2 AYWW B30H80G AKA 3 4 I2PAK (TO−262) CASE 418D PLASTIC STYLE 3 MAXIMUM RATINGS Please See the Table on the Following Page AYWW B30H80G AKA 12 3 A Y WW B30H80 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2009 February, 2009 − Rev. 2 1 Publication Order Number: MBR30H80CT/D MBR30H80CT, MBRB30H80CT−1 MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 80 V Average Rectified Forward Current (TC = 130°C) Per Diode Per Device IF(AV) Peak Repetitive Forward Current (Square Wave, 20 kHz, TC = 130°C) IFM 30 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 240 A Storage Temperature Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −20 to +150 °C > 400 > 8000 V A 15 30 ESD Ratings: Machine Model = C Human Body Model = 3B Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value RqJC RqJA 2.0 70 Maximum Thermal Resistance − Junction−to−Case − Junction−to−Ambient Unit °C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 2) (iF = 3 A, TJ = 25°C) (iF = 3 A, TJ = 25°C) (iF = 15 A, TJ = 25°C) (iF = 15 A, TJ = 125°C) (iF = 30 A, TJ = 25°C) (iF = 30 A, TJ = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TJ = 125°C) (Rated DC Voltage, TJ = 25°C) iR Min Typ Max − − − − − − 0.49 0.37 0.65 0.55 0.77 0.67 0.58 0.45 0.78 0.65 0.88 0.75 − − 12 0.017 35 0.250 V mA 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. DEVICE ORDERING INFORMATION Package Type Shipping† MBR30H80CTG TO−220 (Pb−Free) 50 Units / Rail MBRB30H80CT−1G I2PAK (Pb−Free) 50 Units / Rail Device Order Number http://onsemi.com 2 Unit MBR30H80CT, MBRB30H80CT−1 100 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 10 150°C TJ = 25°C 1 125°C 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 125°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E−01 150°C 150°C 1.0E−02 IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 1.0E−03 125°C 1.0E−03 125°C 1.0E−04 1.0E−04 1.0E−05 TJ = 25°C 1.0E−05 1.0E−06 1.0E−06 TJ = 25°C 10 20 30 40 50 60 70 80 1.0E−07 0 10 20 30 40 50 60 70 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 80 6 RqJC = 2°C/W dc IF, AVERAGE FORWARD CURRENT (A) IF, AVERAGE FORWARD CURRENT (A) 150°C VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.0E−02 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 80 TJ = 25°C 1.0 0.1 0.0 1.0 1.0E−01 1.0E−07 0 10.0 SQUARE WAVE 90 100 110 120 130 140 150 RJA = 70°C/W 5 dc 4 3 2 SQUARE WAVE 1 0 0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Case per Leg Figure 6. Current Derating, Ambient per Leg http://onsemi.com 3 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 10000 TJ = 150°C VR, REVERSE VOLTAGE (V) PFO, AVERAGE POWER DISSIPATION (W) MBR30H80CT, MBRB30H80CT−1 SQUARE WAVE dc 0 2 TJ = 25°C 1000 100 4 6 8 10 12 14 16 18 20 22 24 26 28 30 IO, AVERAGE FORWARD CURRENT (A) 10 0 10 20 R(t), TRANSIENT THERMAL RESISTANCE Figure 7. Forward Power Dissipation 30 40 50 60 C, CAPACITANCE (pF) 70 80 Figure 8. Capacitance 100 D = 0.5 10 0.2 0.1 1 0.05 P(pk) 0.01 t1 0.1 t2 SINGLE PULSE 0.01 0.000001 0.00001 DUTY CYCLE, D = t1/t2 0.0001 0.001 0.1 0.01 1 10 100 1000 t1, TIME (sec) R(t), TRANSIENT THERMAL RESISTANCE Figure 9. Thermal Response Junction−to−Ambient 10 1 D = 0.5 0.2 0.1 0.05 P(pk) 0.1 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 t1, TIME (sec) Figure 10. Thermal Response Junction−to−Case http://onsemi.com 4 10 100 1000 MBR30H80CT, MBRB30H80CT−1 PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AF −T− B F T SEATING PLANE C S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. http://onsemi.com 5 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MBR30H80CT, MBRB30H80CT−1 PACKAGE DIMENSIONS I2PAK (TO−262) CASE 418D−01 ISSUE D C E V −B− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 A W 1 2 DIM A B C D E F G H J K S V W 3 F −T− SEATING PLANE K S J G D 3 PL 0.13 (0.005) M T B H M STYLE 3: PIN 1. 2. 3. 4. INCHES MIN MAX 0.335 0.380 0.380 0.406 0.160 0.185 0.026 0.035 0.045 0.055 0.122 REF 0.100 BSC 0.094 0.110 0.013 0.025 0.500 0.562 0.390 REF 0.045 0.070 0.522 0.551 MILLIMETERS MIN MAX 8.51 9.65 9.65 10.31 4.06 4.70 0.66 0.89 1.14 1.40 3.10 REF 2.54 BSC 2.39 2.79 0.33 0.64 12.70 14.27 9.90 REF 1.14 1.78 13.25 14.00 ANODE CATHODE ANODE CATHODE SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBR30H80CT/D