MBR350

MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. http://onsemi.com Features • • • • • • • Extremely Low vF Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Low Stored Charge, Majority Carrier Conduction Shipped in plastic bags, 500 per bag Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the part number These devices are manufactured with a Pb−Free external lead finish only* SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 50, 60 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • AXIAL LEAD CASE 267−05 (DO−201AD) STYLE 1 Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16 in from case Polarity: Cathode indicated by Polarity Band MARKING DIAGRAM MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR350 MBR360 Average Rectified Forward Current TA = 65°C (RJA = 28°C/W, P.C. Board Mounting) Non−Repetitive Peak Surge Current (Note 1) (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz, TL = 75°C) Operating and Storage Junction Temperature Range (Reverse Voltage Applied) Peak Operating Junction Temperature (Forward Current Applied) Symbol VRRM VRWM VR Max Unit 50 60 IO 3.0 A IFSM 80 A December, 2004 − Rev. 4 MBR3x0= Device Code x = 5 or 6 ORDERING INFORMATION Package Shipping† MBR350 Axial Lead 500 Units/Bag MBR350RL Axial Lead 1500/Tape & Reel MBR360 Axial Lead 500 Units/Bag MBR360RL Axial Lead 1500/Tape & Reel Device TJ, Tstg TJ(pk) °C −65 to +150 °C 150 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Lead Temperature reference is cathode lead 1/32 in from case. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2004 MBR 3x0 V 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBR350/D MBR350, MBR360 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient (see Note 4, Mounting Method 3) Symbol Max Unit RJA 28 °C/W Symbol Max Unit ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 2) Characteristic Maximum Instantaneous Forward Voltage (Note 3) (iF = 1.0 Amp) (iF = 3.0 Amp) (iF = 9.4 Amp) vF Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 3) TL = 25°C TL = 100°C iR V 0.600 0.740 1.080 mA 0.60 20 2. Lead Temperature reference is cathode lead 1/32 in from case. 3. Pulse Test: Pulse Width = 300
s, Duty Cycle = 2.0%. 20 75°C 25°C I , REVERSE CURRENT (mA) R TJ = 100°C 20 10 10 7.0 3.0 5.0 2.0 1.0 0.50 100°C 75°C 0.20 0.10 0.05 *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 0.02 0.01 2.0 25°C 0.005 0.002 1.0 0 10 20 30 40 50 60 80 VR REVERSE VOLTAGE (VOLTS) 0.7 Figure 2. Typical Reverse Current* , AVERAGE FORWARD CURRENT (AMPS) 0.5 0.3 0.2 0.1 0.07 0.05 5.0 RATED VR R
JA = 28°C/W 4.0 DC 3.0 SQUARE WAVE 2.0 1.0 TJ = 150°C F (AV) 0.03 0.02 I i , INSTANTANEOUS FORWARD CURRENT (AMPS) F 5.0 TJ = 150°C 0 0.2 0.6 0.8 0.4 1.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) 1.2 1.4 0 0 20 40 60 80 100 120 TA, AMBIENT TEMPERATURE (C°) 140 Figure 3. Current Derating Ambient (Mounting Method #3 per Note 4) Figure 1. Typical Forward Voltage http://onsemi.com 2 160 5.0 300 4.0 200 TJ = 150°C 3.0 C, CAPACITANCE (pF) P , AVERAGE POWER DISSIPATION (WATTS) F (AV) MBR350, MBR360 SQUARE WAVE 2.0 dc TJ = 25°C 100 70 50 1.0 40 0 30 0 1.0 2.0 3.0 4.0 IF (AV), AVERAGE FORWARD CURRENT (AMPS) 0 5.0 10 Figure 4. Power Dissipation 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Typical Capacitance NOTE 4 — MOUNTING DATA Data shown for thermal resistance junction−to−ambient (RJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RJA IN STILL AIR Mounting Method Lead Length, L (in) 1/8 1/4 1/2 3/4 RJA 1 50 51 53 55 °C/W 2 58 59 61 63 °C/W 3 °C/W 28 Mounting Method 1 Mounting Method 2 P.C. Board where available copper surface is small. Vector Push−In Terminals T−28 L ÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉ L ÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉ L Mounting Method 3 ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ P.C. Board with 2−1/2″ X 2−1/2″ copper surface. L = 1/2’’ Board Ground Plane http://onsemi.com 3 L 50 MBR350, MBR360 PACKAGE DIMENSIONS AXIAL LEAD CASE 267−05 (DO−201AD) ISSUE G K D A 1 2 B K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B D K INCHES MIN MAX 0.287 0.374 0.189 0.209 0.047 0.051 1.000 −−− MILLIMETERS MIN MAX 7.30 9.50 4.80 5.30 1.20 1.30 25.40 −−− STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 For additional information, please contact your local Sales Representative. MBR350/D