Switch-mode Schottky
Power Rectifier
250 V, 40 A
MBR40250G,
MBR40250TG,
MBRF40250TG,
MBRB40250TG
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MARKING
DIAGRAMS
4
Features
•
•
•
•
•
TO−220 (2−LEAD)
CASE 221B
250 V Blocking Voltage
Low Forward Voltage Drop, VF = 0.86 V
Soft Recovery Characteristic, TRR < 35 ns
Stable Switching Performance Over Temperature
These Devices are Pb−Free and are RoHS Compliant
3
1
3
Benefits
•
•
•
•
4
TO−220
CASE 221A
T SUFFIX
Reduces or Eliminates Reverse Recovery Oscillations
Minimizes Need for EMI Filtering
Reduces Switching Losses
Improved Efficiency
AYWW
B40250TG
AKA
1
2, 4
Applications
•
•
•
•
1, 4
3
1
Power Supply
Power Management
Automotive
Instrumentation
2
3
TO−220 FULLPACKt
CASE 221D
T SUFFIX
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 1.9 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
AYWW
B40250G
KA
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Epoxy Meets UL 94 V−0 at 0.125 in
1
AYWW
B40250TG
AKA
2
3
1
2
3
4
1
AY WW
D2PAK 3
CASE 418B
B40250TG
AKA
1
3
4
3
B40250 = Device Code
T
= 3 pins
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
KA, AKA = Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
July, 2020 − Rev. 15
1
Publication Order Number:
MBR40250/D
MBR40250G, MBR40250TG, MBRF40250TG, MBRB40250TG
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
250
V
Average Rectified Forward Current
(Rated VR) TC = 82°C MBR40250, MBR40250T, MBRB40250T
(Rated VR) TC = 46°C MBRF40250T
IF(AV)
40
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 82°C MBR40250, MBR40250T, MBRB40250T
(Rated VR, Square Wave, 20 kHz) TC = 46°C MBRF40250T
IFRM
80
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
150
A
Storage Temperature
Tstg
*65 to +175
°C
TJ
*65 to +150
°C
dv/dt
10,000
V/ms
Operating Junction Temperature
Voltage Rate of Change (Rated VR)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Maximum Thermal Resistance
Junction−to−Case
MBR40250(T) and MBRB40250T
MBRF40250
Junction−to−Ambient
MBR40250(T)
MBRF40250
MBRB40250T
RqJC
RqJA
Value
Unit
°C/W
2.0
3.0
60
50
50
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Maximum Instantaneous Forward Voltage (Note 1)
IF = 20 A, TC = 25°C
IF = 20 A, TC = 125°C
IF = 40 A, TC = 25°C
IF = 40 A, TC = 125°C
VF
Maximum Instantaneous Reverse Current (Note 1)
Rated DC Voltage, TC = 25°C
Rated DC Voltage, TC = 125°C
IR
Maximum Reverse Recovery Time
IF = 1.0 A, di/dt = 50 A/ms, TC = 25°C
trr
Value
0.86
0.71
0.97
0.86
0.25
30
35
Unit
V
mA
ns
DYNAMIC CHARACTERISTICS
Capacitance
VR = −5.0 V, TC = 25°C, Frequency = 1.0 MHz
CT
500
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
www.onsemi.com
2
MBR40250G, MBR40250TG, MBRF40250TG, MBRB40250TG
100
100
IF, MAXIMUM FORWARD CURRENT (A)
IF, INSTANTANEOUS FORWARD CURRENT (A)
TYPICAL CHARACTERISTICS
TJ = 150°C
TJ = 125°C
10
TJ = 100°C
TJ = 25°C
1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
TJ = 150°C
10
TJ = 100°C
TJ = 125°C
TJ = 25°C
1
0.3
0.4
0.7
0.8
0.9
1.0
VF, MAXIMUM FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
700
1.0E-02
600
C, CAPACITANCE (pF)
IR, REVERSE CURRENT (A)
TJ = 150°C
TJ = 125°C
1.0E-03
TJ = 100°C
1.0E-04
1.0E-05
1.0E-06
1.1
TJ = 25°C
500
400
300
200
100
TJ = 25°C
1.0E-07
25
50
100
75
125
150
175
200
225
0
250
1
10
VR, REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance
PF(AV), AVERAGE POWER DISSIPATION (W)
DC
100
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
IF(AV), AVERAGE FORWARD CURRENT (A)
0.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.0E-01
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
0.5
RATED VOLTAGE
RqJC = 2°C/W
SQUARE WAVE
MBR40250
MBR40250T
MBRB40250T
0 10 20 30 40 50 60 70 80 90 100110 120 130 140150
50
MBR40250
MBR40250T
MBRB40250T
40
30
SQUARE WAVE
20
DC
10
0
0
TC, CASE TEMPERATURE (°C)
5
10
15
20
25
30
35
IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating (Case) for
MBR40250, MBR40250T and MBRB40250T
Figure 6. Forward Power Dissipation for
MBR40250, MBR40250T and MBRB40250T
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3
40
MBR40250G, MBR40250TG, MBRF40250TG, MBRB40250TG
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
PF(AV), AVERAGE POWER DISSIPATION (W)
IF(AV), AVERAGE FORWARD CURRENT (A)
TYPICAL CHARACTERISTICS
RATED VOLTAGE
RqJC = 3°C/W
DC
SQUARE WAVE
MBRF40250T
0 10 20 30 40 50 60 70 80 90 100110 120 130 140150
50
MBRF40250T
40
30
SQUARE WAVE
20
DC
10
0
0
TC, CASE TEMPERATURE (°C)
5
10
15
20
25
30
35
40
IO, AVERAGE FORWARD CURRENT (A)
Figure 7. Current Derating (Case) for
MBRF40250T
Figure 8. Forward Power Dissipation for
MBRF40250T
ORDERING INFORMATION
Package
Shipping†
TO−220 (2−LEAD)
(Pb−Free)
50 Units / Rail
TO−220
(Pb−Free)
50 Units / Rail
MBRF40250TG
TO−220 FULLPACK
(Pb−Free)
50 Units / Rail
MBRB40250TG
D2PAK 3
(Pb−Free)
50 Units / Rail
MBRB40250TT4G
D2PAK 3
(Pb−Free)
800 Units / Tape & Reel
Device
MBR40250G
MBR40250TG
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
FULLPAK is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
www.onsemi.com
4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220
CASE 221A
ISSUE AK
DATE 13 JAN 2022
SCALE 1:1
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
STYLE 2:
PIN 1.
2.
3.
4.
BASE
EMITTER
COLLECTOR
EMITTER
STYLE 3:
PIN 1.
2.
3.
4.
CATHODE
ANODE
GATE
ANODE
STYLE 4:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
STYLE 5:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
STYLE 7:
PIN 1.
2.
3.
4.
CATHODE
ANODE
CATHODE
ANODE
STYLE 8:
PIN 1.
2.
3.
4.
CATHODE
ANODE
EXTERNAL TRIP/DELAY
ANODE
STYLE 9:
PIN 1.
2.
3.
4.
GATE
COLLECTOR
EMITTER
COLLECTOR
STYLE 10:
PIN 1.
2.
3.
4.
GATE
SOURCE
DRAIN
SOURCE
STYLE 11:
PIN 1.
2.
3.
4.
DRAIN
SOURCE
GATE
SOURCE
STYLE 12:
PIN 1.
2.
3.
4.
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
NOT CONNECTED
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42148B
TO−220
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220, 2−LEAD
CASE 221B−04
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
B
Q
SCALE 1:1
F
S
T
DIM
A
B
C
D
F
G
H
J
K
L
Q
R
S
T
U
4
A
1
U
3
H
K
L
R
D
J
G
STYLE 1:
PIN 1.
2.
3.
4.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42149B
TO−220, 2−LEAD
CATHODE
N/A
ANODE
CATHODE
DATE 12 APR 2013
STYLE 2:
PIN 1.
2.
3.
4.
INCHES
MIN
MAX
0.595
0.620
0.380
0.405
0.160
0.190
0.025
0.039
0.142
0.161
0.190
0.210
0.110
0.130
0.014
0.025
0.500
0.562
0.045
0.060
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
MILLIMETERS
MIN
MAX
15.11
15.75
9.65
10.29
4.06
4.82
0.64
1.00
3.61
4.09
4.83
5.33
2.79
3.30
0.36
0.64
12.70
14.27
1.14
1.52
2.54
3.04
2.04
2.79
1.14
1.39
5.97
6.48
0.000
1.27
ANODE
N/A
CATHODE
ANODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
−T−
−B−
F
C
S
Q
SCALE 1:1
SEATING
PLANE
U
1 2 3
−Y−
K
G
N
L
D
STYLE 1:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. CATHODE
STYLE 5:
PIN 1. CATHODE
2. ANODE
3. GATE
J
R
3 PL
0.25 (0.010)
M
B
M
Y
DESCRIPTION:
INCHES
MIN
MAX
0.617
0.635
0.392
0.419
0.177
0.193
0.024
0.039
0.116
0.129
0.100 BSC
0.118
0.135
0.018
0.025
0.503
0.541
0.048
0.058
0.200 BSC
0.122
0.138
0.099
0.117
0.092
0.113
0.239
0.271
MILLIMETERS
MIN
MAX
15.67
16.12
9.96
10.63
4.50
4.90
0.60
1.00
2.95
3.28
2.54 BSC
3.00
3.43
0.45
0.63
12.78
13.73
1.23
1.47
5.08 BSC
3.10
3.50
2.51
2.96
2.34
2.87
6.06
6.88
MARKING
DIAGRAMS
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
STYLE 6:
PIN 1. MT 1
2. MT 2
3. GATE
xxxxxx
G
A
Y
WW
DOCUMENT NUMBER:
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
U
A
H
DATE 27 FEB 2009
98ASB42514B
TO−220 FULLPAK
xxxxxxG
AYWW
AYWW
xxxxxxG
AKA
Bipolar
Rectifier
= Specific Device Code
= Pb−Free Package
= Assembly Location
= Year
= Work Week
A
Y
WW
xxxxxx
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
= Polarity Designator
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE L
DATE 17 FEB 2015
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
−B−
V
W
4
1
2
A
S
3
−T−
SEATING
PLANE
K
W
J
G
D
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
H
3 PL
0.13 (0.005)
M
T B
M
VARIABLE
CONFIGURATION
ZONE
N
R
P
L
M
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
L
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
U
L
M
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 5:
STYLE 6:
PIN 1. CATHODE
PIN 1. NO CONNECT
2. ANODE
2. CATHODE
3. CATHODE
3. ANODE
4. ANODE
4. CATHODE
MARKING INFORMATION AND FOOTPRINT ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42761B
D2PAK 3
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
D2PAK 3
CASE 418B−04
ISSUE L
DATE 17 FEB 2015
GENERIC
MARKING DIAGRAM*
xx
xxxxxxxxx
AWLYWWG
xxxxxxxxG
AYWW
AYWW
xxxxxxxxG
AKA
IC
Standard
Rectifier
xx
A
WL
Y
WW
G
AKA
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
= Polarity Indicator
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
SOLDERING FOOTPRINT*
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42761B
D2PAK 3
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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