MBR40L60CTG
Switch-mode
Power Rectifier
60 V, 40 A
Features and Benefits
•
•
•
•
•
•
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Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capability
40 A Total (20 A Per Diode Leg)
Guard−Ring for Stress Protection
This Device is Pb−Free and is RoHS Compliant
SCHOTTKY BARRIER
RECTIFIER
40 AMPERES, 60 VOLTS
1
2, 4
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
3
4
Mechanical Characteristics:
•
•
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Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight (Approximately): 1.9 Grams
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
1
2
3
TO−220
CASE 221A
STYLE 6
MARKING DIAGRAM
AYWW
B40L60G
AKA
A
Y
WW
B40L60
G
AKA
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Device
= Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 1
1
Publication Order Number:
MBR40L60CT/D
MBR40L60CTG
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
60
V
IF(AV)
20
40
A
IFSM
240
A
Operating Junction Temperature (Note 1)
TJ
−55 to +150
°C
Storage Temperature
Tstg
−65 to +175
°C
> 400
> 8000
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC = 130°C
(Per Leg)
(Per Device)
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
ESD Ratings:
Machine Model = C
Human Body Model = 3B
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
RqJC
RqJA
1.8
70
Typ
Max
0.56
0.53
0.75
0.69
0.61
0.58
0.81
0.74
210
95
550
175
Unit
°C/W
Maximum Thermal Resistance
Junction−to−Case
Junction−to−Ambient
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Characteristic
Symbol
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 20 A, TC = 25°C)
(IF = 20 A, TC = 125°C)
(IF = 40 A, TC = 25°C)
(IF = 40 A, TC = 125°C)
vF
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TC = 25°C)
(Rated DC Voltage, TC = 125°C)
iR
Unit
V
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
DEVICE ORDERING INFORMATION
Device Order Number
MBR40L60CTG
Package Type
Shipping
TO−220
(Pb−Free)
50 Units / Rail
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2
MBR40L60CTG
100
IF, AVERAGE FORWARD CURRENT
(A)
IF, INSTANTANEOUS FORWARD
CURRENT (A)
100
125°C
10
150°C
85°C
1
TJ = 25°C
0.1
0
125°C
10
1
TJ = 25°C
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
85°C
150°C
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
1.1 1.2 1.3
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.0E+00
1.0E+00
125°C
1.0E−02
85°C
1.0E−03
125°C
1.0E−02
85°C
1.0E−03
TJ = 25°C
1.0E−05
1.0E−05
10
20
30
40
VR, REVERSE VOLTAGE (V)
50
60
1.0E−06
0
Figure 3. Typical Reverse Current
32
28
SQUARE WAVE
20
16
12
8
4
0
80
90
100
110
120
130
140
20
30
40
VR, REVERSE VOLTAGE (V)
50
60
6
RqJC = 1.8°C/W
dc
10
Figure 4. Maximum Reverse Current
IF, AVERAGE FORWARD CURRENT
(A)
IF, AVERAGE FORWARD CURRENT
(A)
36
24
TJ = 25°C
1.0E−04
1.0E−04
1.0E−06
0
1.0E−01
IR, REVERSE CURRENT (A)
IR, REVERSE CURRENT (A)
150°C
150°C
1.0E−01
RqJA = 70°C/W
5
dc
4
3
SQUARE WAVE
2
1
0
0
150
20
40
60
80
100
120
140 160
TC, CASE TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Current Derating, Case per Leg
Figure 6. Current Derating, Ambient per Leg
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3
10000
40
TJ = 150°C
35
TJ = 25°C
C, CAPACITANCE (pF)
PF, AVERAGE POWER DISSIPATION (W)
MBR40L60CTG
30
25
SQUARE WAVE
20
15
dc
10
1000
100
5
0
10
0
5
10
15
20
25
30
35
IO, AVERAGE FORWARD CURRENT (A)
40
0
10
20
Figure 7. Forward Power Dissipation
R(t), TRANSIENT THERMAL RESISTANCE
30
40
50
60
VR, REVERSE VOLTAGE (V)
Figure 8. Capacitance
10
1
D = 0.5
0.2
0.1
0.05
P(pk)
0.1
t1
0.01
t2
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
DUTY CYCLE, D = t1/t2
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
R(t), TRANSIENT THERMAL RESISTANCE
Figure 9. Thermal Response Junction−to−Case for MBR40L60CT
100
D = 0.5
0.2
10
0.1
0.02
0.05
1
0.01
0.1
SINGLE PULSE
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 10. Thermal Response Junction−to−Ambient for MBR40L60CT
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4
100
1000
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provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
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PUBLICATION ORDERING INFORMATION
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North American Technical Support:
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Phone: 011 421 33 790 2910
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