MBRA140T3G

MBRA140T3G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SMA(DO-214AC)

  • 描述:

    直流反向耐压(Vr):40V 平均整流电流(Io):1A 正向压降(Vf):550mV@1A

  • 数据手册
  • 价格&库存
MBRA140T3G 数据手册
MBRA140, NRVBA140 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • • Small Compact Surface Mountable Package with J−Bent Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Guardring for Stress Protection NRVBA & SBRA Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 40 VOLTS SMA CASE 403D MARKING DIAGRAM B14 AYWW G Mechanical Characteristics • Case: Epoxy, Molded • Weight: 70 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • • 260°C Max. for 10 Seconds Shipped in 12 mm tape, 5000 units per 13 inch reel Polarity: Cathode Lead Indicated by Either Notch in Plastic Body or Polarity Band B14 = Specific Device Code A = Assembly Location** Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Device Package Shipping† MBRA140T3G SMA (Pb−Free) 5,000 / Tape & Reel NRVBA140T3G* SMA (Pb−Free) 5,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 April, 2017 − Rev. 11 1 Publication Order Number: MBRA140T3/D MBRA140, NRVBA140 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 95°C) Symbol Value Unit VRRM VRWM VR 40 V IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 100°C) IFRM Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Tstg −55 to +150 °C Operating Junction Temperature TJ −55 to +125 °C Voltage Rate of Change (Rated VR, TJ = 25°C) 2.0 30 dv/dt 10,000 ESD Ratings: Machine Model = C Human Body Model = 3B > 400 > 8000 A A V/ms V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) Symbol Value Unit RqJL RqJA 35 86 °C/W 1. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4. ELECTRICAL CHARACTERISTICS Symbol Characteristic Maximum Instantaneous Forward Voltage (Note 2) see Figure 2 for other Values Maximum Instantaneous Reverse Current see Figure 4 for other Values VF (IF = 1.0 A) (IF = 2.0 A) IR (VR = 40 V) (VR = 20 V) Value Unit TJ = 25°C TJ = 100°C 0.55 0.71 0.505 0.74 TJ = 25°C TJ = 100°C 0.5 0.1 10 4.0 V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 I F, INSTANTANEOUS FORWARD CURRENT (AMPS) i F , INSTANTANEOUS FORWARD CURRENT (AMPS) MBRA140, NRVBA140 10 TJ = 85°C 1.0 TJ = 125°C TJ = 25°C TJ = -40°C 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.0 TJ = 85°C TJ = 25°C TJ = 125°C 0.1 0 0.4 0.2 0.6 1.0 0.8 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100E-3 1.2 100E-3 10E-3 TJ = 125°C 1.0E-3 TJ = 85°C I R , MAXIMUM REVERSE CURRENT (AMPS) I R , REVERSE CURRENT (AMPS) 10 100E-6 10E-3 TJ = 85°C 1.0E-3 TJ = 25°C 100E-6 TJ = 25°C 10E-6 1.0E-6 0 10 20 30 40 10E-6 1.0E-6 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current www.onsemi.com 3 40 MBRA140, NRVBA140 1.2 SQUARE WAVE 1.0 Ipk/Io = p Ipk/Io = 5 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 0 R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) FREQ = 20 kHz 1.4 0.8 PFO , AVERAGE POWER DISSIPATION (WATTS) dc 20 40 60 80 100 120 1.0 0.9 SQUARE WAVE 0.8 dc Ipk/Io = p 0.7 Ipk/Io = 5 0.6 Ipk/Io = 10 0.5 0.4 Ipk/Io = 20 0.3 0.2 0.1 0 140 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation 1.6 T, TIME (s) 1.0E+0 100E-3 10E-3 1.0E-3 100E-6 10E-6 1.0E-3 100E-6 10E-3 1.0E+0 100E-3 10E+0 T, TIME (s) Figure 7. Thermal Response 1000 C, CAPACITANCE (pF) IO , AVERAGE FORWARD CURRENT (AMPS) 1.6 100 TJ = 25°C 10 1.0 0 5.0 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance www.onsemi.com 4 35 40 100E+0 1.0E+3 MBRA140, NRVBA140 PACKAGE DIMENSIONS SMA CASE 403D ISSUE H HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L. E b DIM A A1 b c D E HE L D POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) MIN 1.97 0.05 1.27 0.15 2.29 4.06 4.83 0.76 MILLIMETERS NOM MAX 2.10 2.20 0.10 0.20 1.45 1.63 0.28 0.41 2.60 2.92 4.32 4.57 5.21 5.59 1.14 1.52 MIN 0.078 0.002 0.050 0.006 0.090 0.160 0.190 0.030 INCHES NOM 0.083 0.004 0.057 0.011 0.103 0.170 0.205 0.045 MAX 0.087 0.008 0.064 0.016 0.115 0.180 0.220 0.060 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE A L c A1 SOLDERING FOOTPRINT* 4.0 0.157 2.0 0.0787 2.0 0.0787 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ◊ N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 www.onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBRA140T3/D
MBRA140T3G 价格&库存

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MBRA140T3G
  •  国内价格
  • 20+1.05380
  • 100+0.78820
  • 500+0.61110
  • 5000+0.44280
  • 10000+0.42070
  • 50000+0.38970

库存:13705