MBRA210ET3

MBRA210ET3 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Typical applications are AC/DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 2 AMPERES 10 VOLTS Features • • • • • • • Low IR, Extends Battery Life 1st in the Market Place with a 10 VR Schottky Rectifier Compact Package with J−Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guardring for Over−Voltage Protection Optimized for Low Leakage Current Pb−Free Package is Available SMA CASE 403D PLASTIC MARKING DIAGRAM Mechanical Characteristics • • • • • • • Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 70 mg (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Polarity: Polarity Band Indicates Cathode Lead ESD Ratings: Machine Model = C Human Body Model = 3B B2E1 AYWW G B2E1 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device MBRA210ET3 MBRA210ET3G Package Shipping† SMA 5000/Tape & Reel SMA (Pb−Free) 5000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 August, 2008 − Rev. 6 1 Publication Order Number: MBRA210ET3/D MBRA210ET3 MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 10 V Average Rectified Forward Current (At Rated VR, TC = 125°C) IO 2.0 A IFSM 100 A Tstg, TC −65 to +150 °C TJ −65 to +150 °C dv/dt 10,000 V/ms Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) Symbol Min Pad 1 Inch Pad Unit RqJL RqJA 22 150 15 81 °C/W VF TJ = 25°C TJ = 100°C V 0.405 0.480 0.500 0.275 0.355 0.385 TJ = 25°C TJ = 100°C 15 50 200 500 ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 2) (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) Maximum Instantaneous Reverse Current IR (VR = 5.0 V) (VR = 10 V) 1. Mounted on a 3″ square FR4 PC Board with min. pads or 1″ square copper heat spreader. 2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 mA MBRA210ET3 100 IF, MAXIMUM INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 10 100°C 1 0.1 125°C 0.1 25°C 75°C 0.2 0.3 −40°C 0.4 0.5 0.6 10 1 0.1 0.7 125°C 0.1 100°C 0.2 0.3 25°C 0.4 0.6 0.5 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 0.7 IR, REVERSE CURRENT (AMPS) 1.00E−03 125°C 100°C 1.00E−04 75°C 1.00E−05 1.00E−06 25°C 1.00E−07 0 2 4 6 8 10 VR, REVERSE VOLTAGE (VOLTS) IF, AVERAGE FORWARD CURRENT (AMPS) 3.5 dc 3.0 2.5 SQUARE WAVE 2.0 1.5 1.0 0.5 0 110 120 130 140 150 160 TL, LEAD TEMPERATURE (°C) Figure 4. Current Derating − Junction to Lead PFO, AVERAGE POWER DISSIPATION (WATTS) Figure 3. Typical Reverse Current 1.4 1.2 dc 1.0 0.8 SQUARE WAVE 0.6 0.4 0.2 0 0 http://onsemi.com 3 0.5 1.0 1.5 2.0 2.5 3.0 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Forward Power Dissipation 3.5 MBRA210ET3 C, CAPACITANCE (pF) 10,000 1000 100 0 2 4 6 8 10 VR, REVERSE VOLTAGE (VOLTS) R(t), TRANSIENT THERMAL RESISTANCE (°C/W) Figure 6. Typical Capacitance 100 D = 0.5 0.2 0.1 10 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 100 1000 t, TIME (S) R(t), TRANSIENT THERMAL RESISTANCE (°C/W) Figure 7. Thermal Response, Junction to Ambient (min pad) 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.1 0.01 SINGLE PULSE 0.00001 0.0001 0.001 0.01 0.1 1 10 t, TIME (S) Figure 8. Thermal Response, Junction to Ambient (1 inch pad) http://onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS STYLE 1 SMA CASE 403D ISSUE J STYLE 2 SCALE 1:1 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE DATE 22 OCT 2021 STYLE 2: NO POLARITY GENERIC MARKING DIAGRAM* xxxx AYWWG STYLE 1 xxxx A Y WW G xxxx AYWWG STYLE 2 = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON04079D SMA Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS STYLE 1 SMA CASE 403D ISSUE J STYLE 2 SCALE 1:1 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE DATE 22 OCT 2021 STYLE 2: NO POLARITY GENERIC MARKING DIAGRAM* xxxx AYWWG STYLE 1 xxxx A Y WW G xxxx AYWWG STYLE 2 = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON04079D SMA Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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