MBRA340, NRVBA340,
SBRA340T3G
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
Employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
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SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERES
40 VOLTS
Features
•
•
•
•
•
•
•
Small Compact Surface Mountable Package with J−Bent Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Guardring for Stress Protection
NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SMA
CASE 403D
STYLE 1
1
Cathode
MARKING DIAGRAM
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
•
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Cathode Lead Indicated by Polarity Band
ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3B
Device Meets MSL 1 Requirements
2
Anode
A34
AYWWG
A34
= Device Code
A
= Assembly Location**
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
ORDERING INFORMATION
Device
Package
Shipping†
MBRA340T3G
NRVBA340T3G,
SMA
5,000 /
NRVBA340T3G−VF01, (Pb−Free)
Tape & Reel
SBRA340T3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
January, 2018 − Rev. 9
1
Publication Order Number:
MBRA340T3/D
MBRA340, NRVBA340, SBRA340T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
40
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TL = 100°C)
IO
A
3.0
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
A
100
Storage/Operating Case Temperature
Tstg, TC
−55 to +150
°C
TJ
−55 to +150
°C
Operating Junction Temperature (Note 1)
Voltage Rate of Change
(Rated VR, TJ = 25°C)
dv/dt
V/ms
10,000
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
RθJL
RθJA
15
81
°C/W
Thermal Resistance − Junction−to−Lead (Note 2)
Thermal Resistance − Junction−to−Ambient (Note 2)
2. Mounted on 2″ Square PC Board with 1″ Square Total Pad Size, PC Board FR4.
ELECTRICAL CHARACTERISTICS
Symbol
Characteristic
Value
VF
Maximum Instantaneous Forward Voltage (Note 3)
TJ = 25°C
TJ = 100°C
0.450
0.390
TJ = 25°C
TJ = 100°C
0.3
15
(IF = 3.0 A)
Maximum Instantaneous Reverse Current
IR
Unit
(VR = 40 V)
Volts
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 250 μs, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
1
10
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
10
TJ = 125°C
0.1
0.10
TJ = 100°C
0.20
TJ = 25°C
0.30
0.40
TJ = −55°C
0.50
1
0.1
0.10
0.60
TJ = 125°C
TJ = 100°C
TJ = −55°C
TJ = 25°C
0.20
0.30
0.40
0.50
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VF, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
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2
0.60
IR, MAXIMUM REVERSE CURRENT (AMPS)
MBRA340, NRVBA340, SBRA340T3G
IR, REVERSE CURRENT (AMPS)
100E−3
100E−3
TJ = 125°C
10E−3
1E−3
TJ = 100°C
100E−6
10E−6
TJ = 25°C
1E−6
TJ = 125°C
10E−3
TJ = 100°C
1E−3
TJ = 25°C
100E−6
100E−9
TJ = −55°C
10E−9
1E−9
100E−12
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
TJ = −55°C
10E−6
40
1E−6
0
5
4.5
dc
freq = 20 kHz
4
3.5
3
SQUARE WAVE
Ipk/IO = p
2.5
2
1.5
Ipk/IO = 5
Ipk/IO = 10
1
0.5
0
25
50
75
100
125
150
TL, LEAD TEMPERATURE (°C)
1.8
1.6
SQUARE
WAVE
1.4
dc
1.2
1.0
0.8
Ipk/IO = p
0.6
Ipk/IO = 5
0.4
Ipk/IO = 10
0.2
0
Ipk/IO = 20
0
TJ, DERATED OPERATING TEMPERATURE (°C)
TJ = 25 °C
0
5
1
1.5
2
2.5
3
3.5
4
4.5
5
Figure 6. Forward Power Dissipation
C, CAPACITANCE (pF)
100
0.5
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating
1000
40
Figure 4. Maximum Reverse Current
PFO, AVERAGE POWER DISSIPATION (WATTS)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Typical Reverse Current
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
10
15
20
25
30
VR, REVERSE VOLTAGE (VOLTS)
35
40
125
RqJA = 22 °C/W
115
RqJA = 43 °C/W
105
95
RqJA = 63 °C/W
85
RqJA = 81 °C/W
75
RqJA = 96 °C/W
65
55
0
Figure 7. Capacitance
5
35
10
15
20
25
30
VR, DC REVERSE VOLTAGE (VOLTS)
Figure 8. Typical Operating Temperature
Derating
www.onsemi.com
3
40
R(t), TRANSIENT THERMAL RESISTANCE (°C/W)
MBRA340, NRVBA340, SBRA340T3G
100
D = 0.5
0.2
0.1
10
0.05
0.02
0.01
1
SINGLE PULSE
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
100
1000
t, TIME (S)
R(t), TRANSIENT THERMAL RESISTANCE (°C/W)
Figure 9. Thermal Response, Junction−to−Ambient (min pad)
100
D = 0.5
0.2
10
0.1
0.05
0.02
1
0.1
0.01
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (S)
Figure 10. Thermal Response, Junction to Ambient (1 inch pad)
www.onsemi.com
4
MBRA340, NRVBA340, SBRA340T3G
PACKAGE DIMENSIONS
SMA
CASE 403D
ISSUE H
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
E
b
DIM
A
A1
b
c
D
E
HE
L
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.20
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.008
0.064
0.016
0.115
0.180
0.220
0.060
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A
L
c
A1
SOLDERING FOOTPRINT*
4.000
0.157
2.000
0.079
2.000
0.079
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MBRA340T3/D
