MBRAF1540T3G

MBRAF1540T3G, NRVBAF1540T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • • Low Profile Package for Space Constrained Applications Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction 150°C Operating Junction Temperature Guard−Ring for Stress Protection NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices www.onsemi.com SCHOTTKY BARRIER RECTIFIER 1.5 AMPERE 40 VOLTS SMA−FL CASE 403AA STYLE 6 Mechanical Charactersistics • Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Cathode Polarity Band Device Meets MSL 1 Requirements ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B MARKING DIAGRAM RAE AYWWG RAE A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 40 V Average Rectified Forward Current (At Rated VR, TC = 100°C) IO 1.5 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 100 kHz, TC = 130°C) IFRM 3.0 Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage/Operating Case Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) ORDERING INFORMATION Package Shipping† MBRAF1540T3G SMA−FL (Pb−Free) 5000 / Tape & Reel A NRVBAF1540T3G SMA−FL (Pb−Free) 5000 / Tape & Reel 40 A †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Tstg, TC −55 to +150 °C TJ −55 to +150 °C dv/dt 10,000 V/ms Device Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2016 December, 2016 − Rev. 3 1 Publication Order Number: MBRAF1540/D MBRAF1540T3G, NRVBAF1540T3G THERMAL CHARACTERISTICS Characteristic Symbol Value RqJL 25 RqJA 90 Symbol Value Unit °C/W Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) 1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic vF Maximum Instantaneous Forward Voltage (Note 2) see Figure 2 (iF = 1.5 A) (iF = 3.0 A) IR Maximum Instantaneous Reverse Current (Note 2) see Figure 4 (VR = 40 V) (VR = 20 V) Unit TJ = 25°C TJ = 125°C 0.46 0.54 0.39 0.54 TJ = 25°C TJ = 100°C 0.8 0.1 5.7 1.6 V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 MBRAF1540T3G, NRVBAF1540T3G IF, INSTANTANEOUS FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 10 TJ = 125°C 25°C 1.0 100°C -40°C 0.1 0.3 0.1 0.5 0.9 0.7 TJ = 125°C 1.0 100°C 25°C 0.1 0.3 0.1 0.5 0.9 0.7 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100E-3 10E-3 IR , MAXIMUM REVERSE CURRENT (AMPS) IR , REVERSE CURRENT (AMPS) 10 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100E-3 TJ = 125°C 1.0E-3 100°C 100E-6 10E-3 TJ = 125°C 1.0E-3 100°C 100E-6 10E-6 25°C 1.0E-6 10 0 20 30 25°C 10E-6 1.0E-6 0 40 10 20 30 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 40 3.0 IF(AV), AVERAGE FORWARD CURRENT (A) 1000 TJ = 25°C C, CAPACITANCE (pF) 100 100 10 0 5.0 10 15 20 25 30 35 2.5 2.0 SQUARE WAVE 1.5 1.0 0.5 0.0 100 40 RqJL = 25°C/W DC 110 120 130 VR, REVERSE VOLTAGE (VOLTS) TL, LEAD TEMPERATURE (°C) Figure 5. Capacitance Figure 6. Current Derating www.onsemi.com 3 140 150 R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) MBRAF1540T3G, NRVBAF1540T3G 100 50% Duty Cycle 10 20% 10% 5% 2% 1 1% 0.1 0.01 Single Pulse 0.001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (S) Figure 7. Typical Transient Thermal Response, Junction−to−Ambient www.onsemi.com 4 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMA−FL CASE 403AA−01 ISSUE O DATE 02 MAR 2011 SCALE 2:1 E E1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. D DIM A b c D E E1 L TOP VIEW A c 2X C SIDE VIEW MILLIMETERS MIN MAX 0.90 1.10 1.25 1.65 0.15 0.30 2.40 2.80 4.80 5.40 4.00 4.60 0.70 1.10 SEATING PLANE b 2X L BOTTOM VIEW RECOMMENDED SOLDER FOOTPRINT* 5.56 1.76 1.30 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON55210E SMA−FL Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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