MBRAF3200T3G

MBRAF3200, NRVBAF3200 Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • • • Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very High Blocking Voltage − 200 V 150°C Operating Junction Temperature Guard−Ring for Stress Protection NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable This is a Pb−Free Device www.onsemi.com SCHOTTKY BARRIER RECTIFIER 3.0 AMPERE 200 VOLTS SMA−FL CASE 403AA STYLE 6 MARKING DIAGRAM Mechanical Charactersistics • Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Cathode Polarity Band Device Meets MSL 1 Requirements ESD Ratings: Machine Model = A ESD Ratings: Human Body Model = 1B RAC AYWWG RAC A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V Average Rectified Forward Current (TL = 100°C) IF(AV) 3.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 100 A TJ −65 to +150 °C Operating Junction Temperature Package Shipping† MBRAF3200T3G SMA−FL 5000 / Tape & Reel (Pb−Free) NRVBAF3200T3G SMA−FL 5000 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2016 December, 2016 − Rev. 3 1 Publication Order Number: MBRAF3200T3/D MBRAF3200, NRVBAF3200 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 1 Thermal Resistance, Junction−to−Ambient (Note 1) Symbol Value Unit RqJL RqJA 25 90 °C/W Symbol Value Unit 1. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 2) (IF = 3.0 A, TJ = 25°C) (IF = 4.0 A, TJ = 25°C) (IF = 3.0 A, TJ = 150°C) VF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 150°C) IR V 0.84 0.86 0.62 1.0 6.0 mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 100 100 TC = 150°C 10 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) TC = 100°C TC = 25°C 1 0.1 TC = 100°C TC = 150°C 10 TC = 25°C 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0.6 0.7 0.8 0.9 1 1.1 Figure 2. Maximum Forward Voltage 1.2 1.0E−01 IR, MAXIMUM REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 0.5 Figure 1. Typical Forward Voltage TC = 150°C 1.0E−02 TC = 100°C TC = 150°C 1.0E−03 1.0E−06 TC = 25°C 1.0E−04 1.0E−07 1.0E−09 0 0.4 VF, INSTANTANEOUS VOLTAGE (V) 1.0E−04 1.0E−08 0.2 0.3 VF, INSTANTANEOUS VOLTAGE (V) 1.0E−03 1.0E−05 1.2 1.0E−05 TC = 25°C 20 40 60 80 100 120 140 160 180 200 1.0E−06 0 VR, REVERSE VOLTAGE (V) 20 40 60 80 100 120 140 160 180 200 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current www.onsemi.com 2 MBRAF3200, NRVBAF3200 5 , AVERAGE FORWARD CURRENT (A) TC = 25°C f = 1 MHz Typical Capacitance at 0 V = 209 V 100 F (AV) C, CAPACITANCE (pF) 1000 I 10 0 20 40 60 80 100 120 140 160 180 200 RqJL = 25°C/W DC 4 SQUARE WAVE 3 2 1 0 0 20 40 60 80 100 120 140 VR, REVERSE VOLTAGE (V) TC, LEAD TEMPERATURE (C°) Figure 5. Typical Capacitance Figure 6. Current Derating 160 180 R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 100 50% Duty Cycle 10 20% 10% 5% 2% 1 1% 0.1 0.01 Single Pulse 0.001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (S) Figure 7. Typical Transient Thermal Response, Junction−to−Ambient www.onsemi.com 3 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMA−FL CASE 403AA−01 ISSUE O DATE 02 MAR 2011 SCALE 2:1 E E1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. D DIM A b c D E E1 L TOP VIEW A c 2X C SIDE VIEW MILLIMETERS MIN MAX 0.90 1.10 1.25 1.65 0.15 0.30 2.40 2.80 4.80 5.40 4.00 4.60 0.70 1.10 SEATING PLANE b 2X L BOTTOM VIEW RECOMMENDED SOLDER FOOTPRINT* 5.56 1.76 1.30 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON55210E SMA−FL Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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