MBRB20200CTT4G

MBRB20200CTG, SBRB20200CTT4G Switch-mode Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state−of−the−art device is designed for use in high frequency switching power supplies and converters with up to 48 V outputs. They block up to 200 V and offer improved Schottky performance at frequencies from 250 kHz to 5.0 MHz. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 V Features  200 V Blocking Voltage  Low Forward Voltage Drop  Guardring for Stress Protection and High dv/dt Capability (10,000 V/ms)  Dual Diode Construction − Terminals 1 and 3 Must be Connected for D2PAK CASE 418B Parallel Operation at Full Rating  AEC−Q101 Qualified and PPAP Capable  SBRB Prefix for Automotive and Other Applications Requiring 1  3 Unique Site and Control Change Requirements All Packages are Pb−Free* 4 Mechanical Characteristics:  Case: Epoxy, Molded, Epoxy Meets UL 94 V−0  Weight: 1.7 Grams (Approximately)  Finish: All External Surfaces Corrosion Resistant and Terminal    Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Device Meets MSL1 Requirements ESD Rating:  Human Body Model = 3B  Machine Model = C MARKING DIAGRAM AY WW B20200G AKA A Y WW B20200 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 7 1 Publication Order Number: MBRB20200CT/D MBRB20200CTG, SBRB20200CTT4G MAXIMUM RATINGS (Per Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 200 V Average Rectified Forward Current (At Rated VR, TC = 134C) Per Leg Per Device IF(AV) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = +137C) Per Leg IFRM Nonrepetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg −65 to +175 C Operating Junction Temperature TJ −65 to +150 C dv/dt 10,000 V/ms A 10 20 A 20 Voltage Rate of Change (Rated VR) 150 A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS (Per Leg) Characteristic Thermal Resistance, Junction−to−Case Symbol Value Unit RqJC 2.0 C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 1) (IF = 10 A, TC = 25C) (IF = 10 A, TC = 125C) (IF = 20 A, TC = 25C) (IF = 20 A, TC = 125C) VF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TC = 25C) (Rated dc Voltage, TC = 125C) IR 0.9 0.8 1.0 0.9 1.0 50 V mA DYNAMIC CHARACTERISTICS (Per Leg) Capacitance (VR = −5.0 V, TC = 25C, Frequency = 1.0 MHz) CT pF 500 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle  2.0%. ORDERING INFORMATION Package Shipping† MBRB20200CTG D2PAK (Pb−Free) 50 Units / Rail MBRB20200CTT4G D2PAK (Pb−Free) 800 Units / Tape & Reel SBRB20200CTT4G D2PAK (Pb−Free) 800 Units / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MBRB20200CTG, SBRB20200CTT4G 10,000 70 50 TJ = 150C 1,000 TJ = 150C IR , REVERSE CURRENT (  A) IF, INSTANEOUS FORWARD CURRENT (AMP) 100 20 TJ = 125C 10 7 TJ = 100C 5 TJ = 25C 2 TJ = 125C 100 TJ = 100C 10 1 0.1 TJ = 25C 1 0.2 0.4 0.6 0.8 vF, INSTANTANEOUS VOLTAGE (V) 0.01 1 0 10 28 dc 24 IPK IAV 20 = 20 16 12 8 4 0 0 5 10 15 20 25 30 35 IF(AV), AVERAGE FORWARD CURRENT (AMPS) SQUARE WAVE 32 60 80 100 120 140 25 20 15 dc SQUARE WAVE 10 5 0 110 120 130 140 TC, CASE TEMPERATURE (C) Figure 3. Forward Power Dissipation Figure 4. Current Derating, Case 90 100 150 160 500 RqJA = 16C/W RATED VOLTAGE 16 TJ = 25C 400 dc SQUARE WAVE 8 180 200 RATED VOLTAGE RqJC = 2C/W IF(AV), AVERAGE FORWARD CURRENT (A) 20 12 160 Figure 2. Typical Reverse Current (Per Leg) C, CAPACITANCE (pF) PF(AV), AVERAGE POWER DISSIPATION (WATTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) TJ = 125C 36 40 VR, REVERSE CURRENT (V) Figure 1. Typical Forward Voltage (Per Leg) 40 20 4 300 200 100 0 0 0 25 50 75 100 125 TA, AMBIENT TEMPERATURE (C) 150 175 1 2 5 10 20 50 VR, REVERSE VOLTAGE (V) Figure 5. Current Derating, Ambient Figure 6. Typical Capacitance (Per Leg) http://onsemi.com 3 70 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 A S 3 −T− SEATING PLANE K W J G D DIM A B C D E F G H J K L M N P R S V H 3 PL 0.13 (0.005) M T B M VARIABLE CONFIGURATION ZONE N R P L M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 U L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 5: STYLE 6: PIN 1. CATHODE PIN 1. NO CONNECT 2. ANODE 2. CATHODE 3. CATHODE 3. ANODE 4. ANODE 4. CATHODE MARKING INFORMATION AND FOOTPRINT ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 GENERIC MARKING DIAGRAM* xx xxxxxxxxx AWLYWWG xxxxxxxxG AYWW AYWW xxxxxxxxG AKA IC Standard Rectifier xx A WL Y WW G AKA = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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