MBRB2535CTLT4G

MBRB2535CTLG, NRVBB2535CTLG Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. These state−of−the−art devices have the following features: http://onsemi.com SCHOTTKY BARRIER RECTIFIER 25 AMPERES, 35 VOLTS Features           Center−Tap Configuration Guardring for Stress Protection Low Forward Voltage 125C Operating Junction Temperature Epoxy Meets UL 94, V−0 @ 0.125 in Short Heatsink Tab Manufactured − Not Sheared Similar in Size to the Industry Standard TO−220 Package AEC−Q101 Qualified and PPAP Capable NRVBB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements All Packages are Pb−Free* Mechanical Characteristics  Case: Epoxy, Molded, Epoxy Meets UL 94, V−0  Weight: 1.7 grams (approximately)  Finish: All External Surfaces Corrosion Resistant and Terminal D2PAK CASE 418B STYLE 3 1 4 3 MARKING DIAGRAM AYWW B2535LG AKA A Y WW B2535L G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity Leads are Readily Solderable  Lead and Mounting Surface Temperature for Soldering Purposes:   260C Max. for 10 Seconds Device Meets MSL1 Requirements ESD Ratings:  Machine Model = C (> 400 V)  Human Body Model = 3B (> 8000 V) ORDERING INFORMATION Package Shipping† MBRB2535CTLG D2PAK (Pb−Free) 50 Units/Rail NRVBB2535CTLG D2PAK (Pb−Free) 50 Units/Rail MBRB2535CTLT4G D2PAK (Pb−Free) 800 / Tape & Reel NRVBB2535CTLT4G D2PAK (Pb−Free) 800 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 7 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBRB2535CTL/D MBRB2535CTLG, NRVBB2535CTLG MAXIMUM RATINGS (Per Leg) Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 35 V Average Rectified Forward Current, (Rated VR, TC = 110C) IF(AV) 12.5 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 90C) IFRM 25 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg −65 to +150 C Operating Junction Temperature TJ −65 to +125 C dv/dt 10,000 V/ms Rating Voltage Rate of Change (Rated VR) 150 A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS (Per Leg) Characteristic Thermal Resistance Junction−to−Case Junction−to−Ambient (Note 1) Symbol Value RqJC RqJA 1.0 84 Symbol Value Unit C/W 1. When mounted using minimum recommended pad size on FR−4 board. ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 2) (iF = 25 A, TJ = 25C) (iF = 12.5 A, TJ = 125C) (iF = 12.5 A, TJ = 25C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 125C) (Rated dc Voltage, TJ = 25C) IR 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle  2.0%. http://onsemi.com 2 0.55 0.41 0.47 500 10 Unit V mA 1000 50 I R, REVERSE LEAKAGE CURRENT (mA) I F, INSTANTANEOUS FORWARD CURRENT (AMP) MBRB2535CTLG, NRVBB2535CTLG TJ = 125C 100 20 TJ = 125C 10 5 TJ = 25C 2 1 0.5 0.2 TJ = 100C 10 1 TJ = 25C 0.1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.9 10 0 40 TJ = 125C 35 SQUARE WAVE 30 25 SINE WAVE (RESISTIVE LOAD) 20 DC 15 10 5 0 0 5 10 15 20 25 30 35 IF(AV), AVERAGE FORWARD CURRENT (AMPS) 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) 30 35 Figure 2. Typical Reverse Current, Per Leg IF(AV), AVERAGE FORWARD CURRENT (AMPS) PF(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS) Figure 1. Typical Forward Voltage, Per Leg 5 40 32 (RATED Vr APPLIED) RqJC = 2C/W 28 24 20 DC 16 SQUARE 12 8 4 0 85 Figure 3. Typical Forward Power Dissipation 95 105 115 TC, CASE TEMPERATURE (C) Figure 4. Current Derating, Case http://onsemi.com 3 125 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 A S 3 −T− SEATING PLANE K W J G D DIM A B C D E F G H J K L M N P R S V H 3 PL 0.13 (0.005) M T B M VARIABLE CONFIGURATION ZONE N R P L M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 U L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 5: STYLE 6: PIN 1. CATHODE PIN 1. NO CONNECT 2. ANODE 2. CATHODE 3. CATHODE 3. ANODE 4. ANODE 4. CATHODE MARKING INFORMATION AND FOOTPRINT ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 GENERIC MARKING DIAGRAM* xx xxxxxxxxx AWLYWWG xxxxxxxxG AYWW AYWW xxxxxxxxG AKA IC Standard Rectifier xx A WL Y WW G AKA = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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