MBRB60H100CTT4G

MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G Switch-mode Power Rectifier 100 V, 60 A www.onsemi.com SCHOTTKY BARRIER RECTIFIER 60 AMPERES, 100 VOLTS Features and Benefits • • • • • • • Low Forward Voltage: 0.72 V @ 125°C Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 60 A Total (30 A Per Diode Leg) NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant 1 2, 4 3 MARKING DIAGRAM 4 TO−220 CASE 221A STYLE 6 Applications • Power Supply − Output Rectification • Power Management • Instrumentation 1 2 AYWW B60H100G AKA 3 Mechanical Characteristics: • Case: Epoxy, Molded • Epoxy Meets UL 94 V−0 @ 0.125 in • Weight (Approximately): 1.9 Grams (TO−220) • • • D2PAK−3 CASE 418B STYLE 3 1.7 Grams (D2PAK−3) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model = 3B Machine Model = C A Y WW B60H100 G AKA AYWW B60H100G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Polarity Designator ORDERING INFORMATION Package Shipping† MBR60H100CTG TO−220 (Pb−Free) 50 Units/Rail MBRB60H100CTT4G D2PAK−3 (Pb−Free) 800/ Tape & Reel NRVBB60H100CTT4G D2PAK−3 (Pb−Free) 800/ Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 July, 2017 − Rev. 7 1 Publication Order Number: MBR60H100CT/D MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G MAXIMUM RATINGS (Per Diode Leg) Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current Per Diode (TC = 155°C) Per Device IF(AV) Peak Repetitive Forward Current (Square Wave, 20 kHz, TC = 151°C) IFRM 60 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 350 A Operating Junction Temperature Range (Note 1) TJ *55 to +175 °C Storage Temperature Range Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dV/dt 10,000 V/ms Controlled Avalanche Energy (see test conditions in Figures 9 and 10) WAVAL 400 mJ > 400 > 8000 V A 30 60 ESD Ratings: Machine Model = C Human Body Model = 3B Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value RqJC RqJA 1.0 70 Unit °C/W Maximum Thermal Resistance Junction−to−Case (Min. Pad) Junction−to−Ambient (Min. Pad) ELECTRICAL CHARACTERISTICS (Per Diode Leg) Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 2) (iF = 30 A, TJ = 25°C) (iF = 30 A, TJ = 125°C) (iF = 60 A, TJ = 25°C) (iF = 60 A, TJ = 125°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TJ = 125°C) (Rated DC Voltage, TJ = 25°C) iR Min Typ Max − − − − 0.80 0.68 0.93 0.81 0.84 0.72 0.98 0.84 − − 2.0 0.0013 10 0.01 Unit V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G i , INSTANTANEOUS FORWARD CURRENT (AMPS) F i , INSTANTANEOUS FORWARD CURRENT (AMPS) F TYPICAL CHARACTERISTICS 100 175°C 10 TJ = 150°C 125°C 1.0 25°C 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 100 175°C 10 TJ = 150°C 1.0 25°C 0.1 0.0 0.1 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) IR, MAXIMUM REVERSE CURRENT (AMPS) 1E−03 TJ = 125°C 1E−04 1E−05 TJ = 25°C 1E−07 60 40 80 100 1.0 1.1 TJ = 125°C 1E−03 1E−04 1E−05 TJ = 25°C 1E−06 1E−07 1E−08 0 20 40 60 80 Figure 4. Maximum Reverse Current , AVERAGE FORWARD CURRENT (AMPS) SQUARE WAVE 28 24 20 16 12 8.0 140 145 150 155 160 165 170 1.2 TJ = 150°C Figure 3. Typical Reverse Current dc 135 0.9 VR, REVERSE VOLTAGE (VOLTS) 32 4.0 0 130 0.8 VR, REVERSE VOLTAGE (VOLTS) 48 44 40 36 0.6 0.7 1E−02 F (AV) , AVERAGE FORWARD CURRENT (AMPS) F (AV) I 20 1E−01 175 I IR, REVERSE CURRENT (AMPS) TJ = 150°C 1E−08 0 0.4 0.5 Figure 2. Maximum Forward Voltage 1E−01 1E−06 0.2 0.3 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 1E−02 125°C 180 26 24 22 20 18 16 14 12 10 8.0 6.0 4.0 2.0 0 RATED VOLTAGE APPLIED RqJA = 16° C/W RqJA = 70° C/W (NO HEATSINK) dc SQUARE WAVE dc 0 TC, CASE TEMPERATURE (C°) 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Case Per Leg Figure 6. Current Derating, Ambient Per Leg www.onsemi.com 3 100 175 MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G 60 56 52 48 44 40 36 32 28 24 20 16 12 8 4 0 10000 TJ = 25°C TJ = 175°C SQUARE WAVE C, CAPACITANCE (pF) P , AVERAGE FORWARD POWER DISSIPATION (WATTS) F (AV) TYPICAL CHARACTERISTICS dc 1000 100 10 0 4 8 12 16 20 24 28 32 36 40 44 48 52 56 60 0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) 20 40 60 80 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Forward Power Dissipation Figure 8. Capacitance www.onsemi.com 4 100 MBR60H100CTG, MBRB60H100CTT4G, NRVBB60H100CTT4G +VDD IL 10 mH COIL BVDUT VD MERCURY SWITCH ID ID IL DUT S1 VDD t0 Figure 9. Test Circuit t1 t2 t Figure 10. Current−Voltage Waveforms The unclamped inductive switching circuit shown in Figure 9 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). EQUATION (1): ǒ BV 2 DUT W [ 1 LI LPK AVAL 2 V BV DUT DD EQUATION (2): 2 W [ 1 LI LPK AVAL 2 www.onsemi.com 5 Ǔ MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 CASE 221A ISSUE AK DATE 13 JAN 2022 SCALE 1:1 STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. BASE EMITTER COLLECTOR EMITTER STYLE 3: PIN 1. 2. 3. 4. CATHODE ANODE GATE ANODE STYLE 4: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 STYLE 5: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE STYLE 7: PIN 1. 2. 3. 4. CATHODE ANODE CATHODE ANODE STYLE 8: PIN 1. 2. 3. 4. CATHODE ANODE EXTERNAL TRIP/DELAY ANODE STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR STYLE 10: PIN 1. 2. 3. 4. GATE SOURCE DRAIN SOURCE STYLE 11: PIN 1. 2. 3. 4. DRAIN SOURCE GATE SOURCE STYLE 12: PIN 1. 2. 3. 4. MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED DOCUMENT NUMBER: DESCRIPTION: 98ASB42148B TO−220 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 SCALE 1:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E −B− V W 4 1 2 A S 3 −T− SEATING PLANE K W J G D DIM A B C D E F G H J K L M N P R S V H 3 PL 0.13 (0.005) M T B M VARIABLE CONFIGURATION ZONE N R P L M STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR L M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 U L M INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 5: STYLE 6: PIN 1. CATHODE PIN 1. NO CONNECT 2. ANODE 2. CATHODE 3. CATHODE 3. ANODE 4. ANODE 4. CATHODE MARKING INFORMATION AND FOOTPRINT ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015 GENERIC MARKING DIAGRAM* xx xxxxxxxxx AWLYWWG xxxxxxxxG AYWW AYWW xxxxxxxxG AKA IC Standard Rectifier xx A WL Y WW G AKA = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package = Polarity Indicator *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42761B D2PAK 3 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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