MBRB8H100T4G,
NBRB8H100T4G
Switch-mode
Schottky Power Rectifier
Surface Mount Power Package
This series of Power Rectifiers employs the Schottky Barrier
principle in a large metal−to−silicon power diode. State−of−the−art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, free wheeling diodes, and
polarity protection diodes.
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SCHOTTKY BARRIER
RECTIFIER
8 AMPERES, 100 VOLTS
Features
•
•
•
•
•
•
•
•
Guardring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Short Heat Sink Tab Manufactured − Not Sheared!
AEC−Q101 Qualified and PPAP Capable
NBRB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics:
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
• Weight: 1.7 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL1 Requirements
ESD Ratings:
♦ Machine Model = C (> 400 V)
♦ Human Body Model = 3B (> 8000 V)
D2PAK
CASE 418B
1
4
3
(Pin 1 = No Connect)
MARKING DIAGRAM
AYWW
B8H100G
AKA
B8H100
A
Y
WW
G
AKA
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
= Polarity Indicator
ORDERING INFORMATION
Package
Shipping†
MBRB8H100T4G
D2PAK
(Pb−Free)
800 /
Tape & Reel
NBRB8H100T4G
D2PAK
(Pb−Free)
800 /
Tape & Reel
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 4
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBRB8H100/D
MBRB8H100T4G, NBRB8H100T4G
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(Rated VR) TC = 171°C
IF(AV)
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz) TC = 171°C
IFRM
Max Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz, 25°C)
IFSM
Operating Junction and Storage Temperature Range (Note 1)
TJ, Tstg
8
16
250
−65 to +175
A
A
A
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction−to−Case (Note 2)
Junction−to−Ambient
Symbol
Value
RqJC
RqJA
1.1
44
Symbol
Value
Unit
°C/W
2. When mounted using minimum recommended pad size on FR−4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(IF = 8 A, TJ = 25°C)
(IF = 8 A, TJ = 125°C)
VF
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR
0.71
0.55
4.5
5.3
Unit
V
mA
mA
DYNAMIC CHARACTERISTICS (Per Leg)
CT
Capacitance
(VR = 4.0 V, TC = 25°C, Frequency = 1.0 MHz)
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
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2
pF
600
MBRB8H100T4G, NBRB8H100T4G
TYPICAL CHARACTERISTICS
100
IF, INSTANTANEOUS FORWARD
CURRENT (A)
IF, INSTANTANEOUS FORWARD
CURRENT (A)
100
10
1
25°C
150°C
0.1
125°C
0.1 0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
100
10
IR, REVERSE CURRENT (mA)
IR, REVERSE CURRENT (mA)
25°C
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
100
150°C
1
125°C
0.1
0.01
0.001
0.0001
150°C
1
0.1
1.1
125°C
10
25°C
0
10
20
30
40
50
60
70
80
90
100
150°C
10
1
125°C
0.1
0.01
25°C
0.001
0.0001
0
10
20
VR, REVERSE VOLTAGE (V)
14
1200
1000
800
600
400
200
0
10
20
30
40
50
60
70
80
60
80
70
90 100
90
dc
12
TJ = 25°C
f = 1 MHz
IF(AV), AVERAGE FORWARD
CURRENT (A)
C, CAPACITANCE (pF)
1800
0
50
Figure 4. Maximum Reverse Current
2000
1400
40
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
1600
30
100
10
Square Wave
8
6
4
2
0
150
RqJC = 1.1 °C/W
155
160
160
170
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Capacitance
Figure 6. Current Derating, Case
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3
175
MBRB8H100T4G, NBRB8H100T4G
dc
PF(AV), AVERAGE POWER DISSIPATION (W)
8
RJA = 44°C/W
7
RJA = 80°C/W
6
dc
5
4
3
Square Wave
2
1
0
0
20
40
60
80
100
120
140
160
180
5
TJ = 175°C
Square Wave
4
3
dc
2
1
0
0
1
2
3
4
5
6
8
7
TA, AMBIENT TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Current Derating, Ambient
Figure 8. Typical Forward Power Dissipation
PF(MAX), MAXIMUM POWER DISSIPATION (W)
IF(AV), AVERAGE FORWARD CURRENT (A)
TYPICAL CHARACTERISTICS
5
TJ = 175°C
Square Wave
4
dc
3
2
1
0
0
1
2
3
4
5
6
7
8
IF(AV), AVERAGE FORWARD CURRENT (A)
R(t), TRANSIENT THERMAL RESPONSE (°C/W)
Figure 9. Maximum Forward Power Dissipation
100
50% (DUTY CYCLE)
10
1.0
20%
10%
5.0%
2.0%
1.0%
0.1
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
PULSE TIME (s)
Figure 10. Thermal Response, Junction−to−Ambient
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4
10
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE L
DATE 17 FEB 2015
SCALE 1:1
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
−B−
V
W
4
1
2
A
S
3
−T−
SEATING
PLANE
K
W
J
G
D
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
H
3 PL
0.13 (0.005)
M
T B
M
VARIABLE
CONFIGURATION
ZONE
N
R
P
L
M
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
L
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
U
L
M
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 5:
STYLE 6:
PIN 1. CATHODE
PIN 1. NO CONNECT
2. ANODE
2. CATHODE
3. CATHODE
3. ANODE
4. ANODE
4. CATHODE
MARKING INFORMATION AND FOOTPRINT ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42761B
D2PAK 3
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
D2PAK 3
CASE 418B−04
ISSUE L
DATE 17 FEB 2015
GENERIC
MARKING DIAGRAM*
xx
xxxxxxxxx
AWLYWWG
xxxxxxxxG
AYWW
AYWW
xxxxxxxxG
AKA
IC
Standard
Rectifier
xx
A
WL
Y
WW
G
AKA
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
= Polarity Indicator
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
SOLDERING FOOTPRINT*
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42761B
D2PAK 3
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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