Switch-mode Schottky
Power Rectifier
Surface Mount Power Package
MBRD5H100, NBRD5H100
This series of Power Rectifiers employs the Schottky Barrier
principle in a large metal−to−silicon power diode. State−of−the−art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for use in low voltage, high
frequency switching power supplies, free wheeling diodes, and
polarity protection diodes.
Features
•
•
•
•
•
•
•
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SCHOTTKY BARRIER
RECTIFIER
5 AMPERES, 100 VOLTS
Guardring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V−0 @ 0.125 in
Short Heat Sink Tab Manufactured − Not Sheared!
NBRD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant*
DPAK
CASE 369C
1
4
3
(Pin 1: No Connect)
Mechanical Characteristics:
• Case: Epoxy, Molded, Epoxy Meets UL 94 V−0
• Weight: 0.4 grams (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
MARKING DIAGRAM
Leads are Readily Solderable
AYWW
B
5100G
• Lead and Mounting Surface Temperature for Soldering Purposes:
•
•
260°C Max. for 10 Seconds
Device Meets MSL1 Requirements
ESD Ratings:
♦ Machine Model = C (> 400 V)
♦ Human Body Model = 3B (> 8000 V)
A
Y
WW
B5100
G
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
MBRD5H100T4G
DPAK
(Pb−Free)
2,500 /
Tape & Reel
NBRD5H100T4G
DPAK
(Pb−Free)
2,500 /
Tape & Reel
NBRD5H100T4G−VF01
DPAK
(Pb−Free)
2,500 /
Tape & Reel
Device
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2016
August, 2020 − Rev. 9
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBRD5H100/D
MBRD5H100, NBRD5H100
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
TC = 171°C
IF(AV)
Peak Repetitive Forward Current
(Square Wave, Duty = 0.5) TC = 171°C
IFRM
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
Operating Junction and Storage Temperature Range (Note 1)
TJ, Tstg
5
10
105
−65 to +175
A
A
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance
Junction−to−Case (Note 2)
Junction−to−Ambient (Note 2)
Symbol
Value
RqJC
RqJA
1.6
95.8
Symbol
Value
Unit
°C/W
2. When mounted using minimum recommended pad size on FR−4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(IF = 5 A, TJ = 25°C)
(IF = 5 A, TJ = 125°C)
VF
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
IR
0.71
0.60
4.5
3.5
Unit
V
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%
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2
MBRD5H100, NBRD5H100
100
100
10
1
150°C
25°C
125°C
0.1
0.1
0.2
10
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
10
1
150°C
25°C
125°C
0.1
0.1
0.2
0.4
0.6
0.7
0.8
0.9
1.0
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.1
1.2
100
1
125°C
0.01
0.001
25°C
0.0001
10
150°C
1
125°C
0.1
0.01
25°C
0.001
0.00001
0.0001
0
10
20
30
40
50
60
70
80
90
0
100
10
20
VR, REVERSE VOLTAGE (V)
30
40
50
60
70
80
90 100
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
10
I F(AV) , AVERAGE FORWARD CURRENT (A)
1200
TJ = 25°C
f = 1 MHz
1000
C, CAPACITANCE (pF)
0.5
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
150°C
0.1
0.3
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Ir, REVERSE CURRENT (mA)
Ir, REVERSE CURRENT (mA)
IF, INSTANTANEOUS FORWARD CURRENT (A)
IF, INSTANTANEOUS FORWARD CURRENT (A)
TYPICAL CHARACTERISTICS
800
600
400
200
0
0
20
40
60
80
100
9
8
RqJC = 1.6 °C/W
dc
7
6
Square
5
4
3
2
1
0
145
150
155
160
165
170
TC, CASE TEMPERATURE (°C)
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Capacitance
Figure 6. Current Derating, Case
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3
175
180
MBRD5H100, NBRD5H100
5
P F(AV) , AVERAGE POWER DISSIPATION (W)
I F(AV) , AVERAGE FORWARD CURRENT (A)
TYPICAL CHARACTERISTICS
RqJA = 95.8 °C/W
4
dc
3
Square Wave
2
1
0
0
100
R(t) (C/W)
10
1.0
20
40
60
80
100
120
140
160
22
20
18
Square Wave
16
14
12
dc
10
8
6
4
2
0
180
0
5
10
15
TA, AMBIENT TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Current Derating, Ambient
Figure 8. Forward Power Dissipation
20
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
0.1
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
PULSE TIME (s)
Figure 9. Thermal Response, Junction−to−Case
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4
10
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
4
1 2
DATE 21 JUL 2015
3
SCALE 1:1
A
E
b3
C
A
B
c2
4
L3
Z
D
1
L4
2
3
NOTE 7
b2
e
c
SIDE VIEW
b
0.005 (0.13)
TOP VIEW
H
DETAIL A
M
BOTTOM VIEW
C
Z
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
ROTATED 905 CW
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 8:
PIN 1. N/C
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 9:
STYLE 10:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
3. RESISTOR ADJUST
3. CATHODE
4. CATHODE
4. ANODE
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
AYWW
XXX
XXXXXG
IC
Discrete
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
6.17
0.243
SCALE 3:1
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
XXXXXX
A
L
Y
WW
G
3.00
0.118
1.60
0.063
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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