MBRD835LT4

MBRD835L Preferred Device SWITCHMODEt Power Rectifier DPAK Surface Mount Package http://onsemi.com This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. SCHOTTKY BARRIER RECTIFIER 8.0 AMPERES, 35 VOLTS Features • • • • • • Low Forward Voltage 150°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Compact Size Lead Formed for Surface Mount Pb−Free Packages are Available 1 4 3 MARKING DIAGRAM Mechanical Characteristics • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Shipped 75 Units Per Plastic Tube Available in 16 mm Tape and Reel, 2500 Units Per 13 in Reel, by Adding a “T4” Suffix to the Part Number ESD Rating: Machine Model = C (> 400 V) Human Body Model = 3B (> 8000 V) 4 DPAK CASE 369C 1 2 YWW B 835LG 3 Y WW G = Year = Work Week = Pb−Free Device ORDERING INFORMATION Package Shipping† DPAK 75 Units/Rail MBRD835LG DPAK (Pb−Free) 75 Units/Rail MBRD835LT4 DPAK 2500/Tape & Reel DPAK (Pb−Free) 2500/Tape & Reel Device MBRD835L MBRD835LT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 December, 2005 − Rev. 8 1 Publication Order Number: MBRD835L/D MBRD835L MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 35 V Average Rectified Forward Current (At Rated VR, TC = 88°C) IF(AV) 8.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 80°C) IFRM 16 A Non−Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 75 A Repetitive Avalanche Current (Current Decaying Linearly to Zero in 1 s, Frequency Limited by TJmax) IAR 2.0 A Storage / Operating Case Temperature Tstg −65 to +150 °C Operating Junction Temperature (Note 1) TJ −65 to +150 °C dv/dt 10,000 V/s Voltage Rate of Change (Rated VR) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol Value Unit Thermal Resistance − Junction−to−Case RJC 2.8 °C/W Thermal Resistance − Junction−to−Ambient (Note 2) RJA 80 °C/W Maximum Instantaneous Forward Voltage (Note 3) (iF = 8 Amps, TC = + 25°C) (iF = 8 Amps, TC = +125°C) VF 0.51 0.41 V Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TC = + 25°C) (Rated dc Voltage, TC = +100°C) IR 1.4 35 mA ELECTRICAL CHARACTERISTICS 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA. 2. Rating applies when surface mounted on the minimum pad size recommended. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2%. http://onsemi.com 2 MBRD835L IF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (mA) TYPICAL CHARACTERISTICS 10 TJ = 125°C 1 25°C 0.1 0.01 0 0.1 0.2 0.3 0.4 0.5 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.6 10 TJ = 125°C 1 75°C 0.1 25°C 0.01 0 Figure 1. Maximum Forward Voltage 0.1 0.2 0.3 0.4 0.5 VF, INSTANTANEOUS VOLTAGE (VOLTS) 0.6 Figure 2. Typical Forward Voltage 1000 100 10 100°C I R, REVERSE CURRENT (mA) I R, REVERSE CURRENT (mA) 100 TJ = 125°C 1 25°C 0.1 TJ = 125°C 100°C 10 1 75°C 0.1 0.01 0.001 25°C 0 5 10 15 20 25 VF, REVERSE VOLTAGE (VOLTS) 30 0.01 35 0 Figure 3. Maximum Reverse Current 5 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) 30 Figure 4. Typical Reverse Current http://onsemi.com 3 35 MBRD835L TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) TJ = 25°C TYPICAL MAXIMUM 1000 100 1 10 VR, REVERSE VOLTAGE (VOLTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 5. Maximum and Typical Capacitance 16 14.4 TJ = 125°C 12.8 RJA = 6°C/W dc  (RESISTIVE LOAD) 11.2 9.6 SQUARE WAVE (CAPACITIVE IPK +5 LOAD) IAV 8 6.4 4.8 10 3.2 1.6 0 20 80 85 90 95 100 105 110 115 TC, CASE TEMPERATURE (°C) 120 125 130 8 TJ = 125°C 7 dc 6  (RESISTIVE LOAD) 5 P F(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS IF(AV), AVERAGE FORWARD CURRENT (AMPS) 4 TJ = 125°C  (RESISTIVE LOAD) 3.5 3 SQUARE WAVE 2.5 RJA = 80°C/W SURFACE MOUNTED ON MINIMUM RECOMMENDED PAD SIZE (CAPACITIVE IPK +5 LOAD) IAV 2 1.5 10 1 20 0.5 0 0 10 20 (CAPACITIVE IPK +5 LOAD) IAV 3 2 10 1 20 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 TA, AMBIENT TEMPERATURE (°C) Figure 7. Current Derating 5 dc SURFACE MOUNTED ON MINIMUM RECOMMENDED PAD SIZE SQUARE WAVE 4 Figure 6. Current Derating, Infinite Heatsink 4.5 RJA = 40°C/W 30 40 50 60 70 80 90 100 110 120 130 TA, AMBIENT TEMPERATURE (°C) 8 TJ = 125°C 7  (RESISTIVE LOAD) (CAPACITIVE IPK +5 LOAD) IAV 6 SQUARE WAVE dc 5 10 4 20 3 2 1 0 0 Figure 8. Current Derating, Free Air 1.5 3 4.5 6 7.5 9 10.5 12 13.5 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 9. Forward Power Dissipation http://onsemi.com 4 15 MBRD835L PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O −T− C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− MBRD835L SWITCHMODE is a trademark of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 For additional information, please contact your local Sales Representative. MBRD835L/D