MBRF20100CTG

Switch-mode Schottky Power Rectifier MBRF20100CTG The Switch−mode Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers in very low−voltage, high−frequency switching power supplies, free wheeling diodes and polarity protection diodes. Features • • • • • • • • • • Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop Matched Dual Die Construction High Junction Temperature Capability High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection Epoxy Meets UL 94 V−0 @ 0.125 in Electrically Isolated. No Isolation Hardware Required. These are Pb−Free Devices www.onsemi.com SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 100 VOLTS 1 2 3 TO−220 FULLPAKt CASE 221D Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.9 Grams (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal 1 2 3 Leads are Readily Solderable • Lead Temperature for Soldering Purposes: ORDERING AND MARKING INFORMATION 260°C Max. for 10 Seconds © Semiconductor Components Industries, LLC, 2016 October, 2019 − Rev. 11 See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. 1 Publication Order Number: MBRF20100CT/D MBRF20100CTG MAXIMUM RATINGS (Per Leg) Symbol Value Unit VRRM VRWM VR 100 V IF(AV) 10 20 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz), TC = 133°C IFRM 20 A Non−repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR), TC = 133°C Total Device Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) Operating Junction and Storage Temperature Range (Note 1) Voltage Rate of Change (Rated VR) IRRM 0.5 A TJ, Tstg − 65 to +175 °C dv/dt 10000 V/ms RMS Isolation Voltage (t = 0.3 second, R.H. ≤ 30%, TA = 25°C) (Note 2) Viso1 4500 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (Per Leg) Rating Symbol Maximum Thermal Resistance, Junction to Case Lead Temperature for Soldering Purposes: 1/8″ from Case for 5 Seconds Value Unit RqJC 3.5 °C/W TL 260 °C Symbol Max Unit ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Maximum Instantaneous Forward Voltage (Note 3) (iF = 10 Amp, TC = 25°C) (iF = 10 Amp, TC = 125°C) (iF = 20 Amp, TC = 25°C) (iF = 20 Amp, TC = 125°C) vF Maximum Instantaneous Reverse Current (Note 3) (Rated DC Voltage, TC = 25°C) (Rated DC Voltage, TC = 125°C) iR V 0.85 0.75 0.95 0.85 mA 0.15 150 50 TJ = 150°C 150°C 20 I R, REVERSE CURRENT (mA) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. 2. Proper strike and creepage distance must be provided. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 10 100°C 5.0 TJ = 25°C 3.0 1.0 10 TJ = 125°C TJ = 100°C 1.0 0.1 0.01 0.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0.9 1.0 TJ = 25°C 0 Figure 1. Typical Forward Voltage Per Diode 20 40 60 80 100 VR, REVERSE VOLTAGE (VOLTS) 120 Figure 2. Typical Reverse Current Per Diode www.onsemi.com 2 MBRF20100CTG MARKING DIAGRAMS AYWW B20100G AKA TO−220 B20100 A Y WW G AKA = Device Code = Assembly Location = Year = Work Week = Pb−Free Package = Polarity Designator ORDERING INFORMATION Device MBRF20100CTG Package Shipping† TO−220 (Pb−Free) 50 Units / Rail †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE K −T− −B− F C S Q SCALE 1:1 SEATING PLANE U 1 2 3 −Y− K G N L D STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER STYLE 4: PIN 1. CATHODE 2. ANODE 3. CATHODE STYLE 5: PIN 1. CATHODE 2. ANODE 3. GATE J R 3 PL 0.25 (0.010) M B M Y DESCRIPTION: INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 MARKING DIAGRAMS STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE STYLE 6: PIN 1. MT 1 2. MT 2 3. GATE xxxxxx G A Y WW DOCUMENT NUMBER: NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. DIM A B C D F G H J K L N Q R S U A H DATE 27 FEB 2009 98ASB42514B TO−220 FULLPAK xxxxxxG AYWW AYWW xxxxxxG AKA Bipolar Rectifier = Specific Device Code = Pb−Free Package = Assembly Location = Year = Work Week A Y WW xxxxxx G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Polarity Designator Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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