MBRM110LT1

MBRM110L Surface Mount Schottky Power Rectifier POWERMITE® Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite® has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “ORing” of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 10 VOLTS POWERMITE CASE 457 PLASTIC Features • • • • • • • Ultra Low VF 1st in Marketplace with a 10 VR Schottky Rectifier Low Profile − Maximum Height of 1.1 mm Small Footprint − Footprint Area of 8.45 mm2 Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink ESD Protection: Human Body Model >4000 V (Class 3) Machine Model >400 V (Class C) Pb−Free Packages are Available MARKING DIAGRAM M 1L1 G Mechanical Characteristics: • • • • • Powermite® is JEDEC Registered as D0−216AA Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 62 mg (Approximately) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds ANODE CATHODE M 1L1 G = Date Code = Device Code = Pb−Free Package ORDERING INFORMATION Device MBRM110LT1 Package Shipping † POWERMITE 3000/Tape & Reel MBRM110LT1G POWERMITE 3000/Tape & Reel (Pb−Free) MBRM110LT3 POWERMITE 12000/Tape & Reel MBRM110LT3G POWERMITE 12000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 September, 2005 − Rev. 1 1 Publication Order Number: MBRM110L/D MBRM110L MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 10 V IO 1.0 A Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 50 A Storage Temperature Tstg −55 to 125 °C Operating Junction Temperature TJ −55 to 125 °C dv/dt 10,000 V/ms Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 115°C, RqJL = 35°C/W) Voltage Rate of Change (Rated VR, TJ = 25°C) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Thermal Resistance, Junction−to−Lead (Anode) (Note 1) Thermal Resistance, Junction−to−Tab (Cathode) (Note 1) Thermal Resistance, Junction−to−Ambient (Note 1) Symbol Value Unit Rtjl Rtjtab Rtja 35 23 277 °C/W 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 8 and 9. ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 2) TJ = 25°C TJ = 100°C 0.280 0.365 0.415 0.175 0.275 0.325 TJ = 25°C TJ = 100°C 0.2 0.5 30 60 (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) IR Maximum Instantaneous Reverse Current (Note 2) (VR = 5.0 V) (VR = 10 V) V mA IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 2. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2%. 10 TJ = 125°C 100°C 75°C 25°C −55°C 1 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 TJ = 125°C 100°C 75°C 1 25°C 0.1 0.1 0.2 0.3 −55°C 0.4 0.5 0.6 Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 2 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) IR, INSTANTANEOUS REVERSE VOLTAGE (VOLTS) IR, INSTANTANEOUS REVERSE VOLTAGE (VOLTS) MBRM110L 1E−1 TJ = 125°C 1E−2 100°C 75°C 1E−3 1E−4 25°C 1E−5 1E−6 0 1 2 3 4 5 6 7 8 9 10 VR, REVERSE VOLTAGE (VOLTS) 1E+0 TJ = 125°C 1E−1 100°C 75°C 1E−2 1E−3 25°C 1E−4 1E−5 0 1 3 4 5 6 7 8 9 10 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current IF , AVERAGE FORWARD CURRENT (AMPS) 2 Figure 4. Maximum Reverse Current 1.8 dc 1.6 1.4 SQUARE WAVE 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 TL, LEAD TEMPERATURE (°C) 500 C, CAPACITANCE (pF) 450 400 350 300 TJ = 25°C f = 1 MHz 250 200 150 100 0 1 2 3 4 5 6 7 8 VR, REVERSE VOLTAGE (VOLTS) 9 10 PFO, AVERAGE POWER DISSIPATION (WATTS) Figure 5. Current Derating − Junction to Lead 0.45 0.4 dc 0.35 0.3 SQUARE WAVE 0.25 0.2 0.15 0.1 0.05 0 0 Figure 6. Typical Capacitance 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IO, AVERAGE FORWARD CURRENT (AMPS) Figure 7. Forward Power Dissipation http://onsemi.com 3 1.8 R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) MBRM110L 1.0 50% 0.1 20% 10% 5.0% 0.01 2.0% 1.0% 0.001 0.00001 Rtjl(t) = Rtjl*r(t) 0.0001 0.001 0.01 0.1 1.0 10 100 T, TIME (s) R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 8. Thermal Response Junction to Lead 1.0 50% 0.1 20% 10% 5.0% 0.01 2.0% Rtjl(t) = Rtjl*r(t) 1.0% 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 T, TIME (s) Figure 9. Thermal Response Junction to Ambient http://onsemi.com 4 10 100 1,000 MBRM110L PACKAGE DIMENSIONS POWERMITE CASE 457−04 ISSUE D F 0.08 (0.003) C −A− J M T B S C S S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. TERM. 1 DIM A B C D F H J K L R S −B− K TERM. 2 R L J MILLIMETERS INCHES MIN MAX MIN MAX 1.75 2.05 0.069 0.081 1.75 2.18 0.069 0.086 0.85 1.15 0.033 0.045 0.40 0.69 0.016 0.027 0.70 1.00 0.028 0.039 −0.05 +0.10 −0.002 +0.004 0.10 0.25 0.004 0.010 3.60 3.90 0.142 0.154 0.50 0.80 0.020 0.031 1.20 1.50 0.047 0.059 0.50 REF 0.019 REF D H −T− 0.08 (0.003) M T B S C S SOLDERING FOOTPRINT* 0.635 0.025 2.67 0.105 0.762 0.030 2.54 0.100 1.27 0.050 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. POWERMITE is a registered trademark of and used under a license from Microsemi Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: orderlit@onsemi.com http://onsemi.com 5 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MBRM110L/D