MBRM120ET1G

MBRM120ET1G, NRVBM120ET1G, MBRM120ET3G, NRVBM120ET3G Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky POWERMITE employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the POWERMITE has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles,  1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical.      Low Profile − Maximum Height of 1.1 mm Small Footprint − Footprint Area of 8.45 mm2 Low VF Provides Higher Efficiency and Extends Battery Life ESD Ratings:  Machine Model = C (> 400 V)  Human Body Model = 3B (> 16,000 V) Supplied in 12 mm Tape and Reel Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink AEC−Q101 Qualified and PPAP Capable NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements All Packages are Pb−Free* Mechanical Characteristics      SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 20 VOLTS POWERMITE CASE 457 STYLE 1 MARKING DIAGRAM 1 Features     http://onsemi.com POWERMITE is JEDEC Registered as DO−216AA Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 16.3 mg (approximately) Lead and Mounting Surface Temperature for Soldering Purposes 260C Maximum for 10 Seconds BCV M G M BCVG 2 = Device Code = Date Code = Pb−Free Package ORDERING INFORMATION Package Shipping† MBRM120ET1G POWERMITE (Pb−Free) 3,000 / Tape & Reel NRVBM120ET1G POWERMITE (Pb−Free) 3,000 / Tape & Reel MBRM120ET3G POWERMITE (Pb−Free) 12,000 / Tape & Reel NRVBM120ET3G POWERMITE (Pb−Free) 12,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 3 1 Publication Order Number: MBRM120E/D MBRM120ET1G, NRVBM120ET1G, MBRM120ET3G, NRVBM120ET3G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 130C) Symbol Value Unit VRRM VRWM VR 20 V IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 135C) IFRM Non−Repetitive Peak Surge Current (Non−Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM Storage Temperature Tstg −65 to 150 C Operating Junction Temperature TJ −65 to 150 C Voltage Rate of Change (Rated VR, TJ = 25C) 2.0 50 dv/dt 10,000 A A V/ms Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Lead (Anode) (Note 1) Thermal Resistance − Junction−to−Tab (Cathode) (Note 1) Thermal Resistance − Junction−to−Ambient (Note 1) Symbol Value Unit Rtjl Rtjtab Rtja 35 23 277 C/W 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 and 10. ELECTRICAL CHARACTERISTICS Characteristic Symbol VF Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) IR Maximum Instantaneous Reverse Current (Note 2), See Figure 4 (VR = 20 V) (VR = 10 V) (VR = 5.0 V) 2. Pulse Test: Pulse Width  250 ms, Duty Cycle  2%. http://onsemi.com 2 Value Unit TJ = 25C TJ = 100C 0.455 0.530 0.595 0.360 0.455 0.540 TJ = 25C TJ = 100C 10 1.0 0.5 1600 500 300 V mA iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBRM120ET1G, NRVBM120ET1G, MBRM120ET3G, NRVBM120ET3G 10 TJ = 150C TJ = 25C TJ = 100C TJ = −40C 1.0 0.1 0.2 0.4 0.6 0.8 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 TJ = 150C TJ = 100C 1.0 TJ = 25C 0.1 0.2 TJ = 150C 100E−6 TJ = 100C 1E−6 TJ = 25C 0 5.0 20 15 FREQ = 20 kHz Ipk/Io = 5 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 25 45 10E−9 0 5.0 10 15 20 Figure 4. Maximum Reverse Current Ipk/Io = p 0.6 TJ = 25C 1E−6 Figure 3. Typical Reverse Current SQUARE WAVE 0.8 10E−6 VR, REVERSE VOLTAGE (VOLTS) 1.4 1.0 TJ = 100C VR, REVERSE VOLTAGE (VOLTS) dc 1.2 1E−3 100E−9 10 1.8 1.6 TJ = 150C 100E−6 10E−6 100E−9 10E−3 PFO, AVERAGE DISSIPATION (WATTS) IR, REVERSE CURRENT (AMPS) 10E−3 1E−3 IO, AVERAGE FORWARD CURRENT (AMPS) 0.8 100E−3 100E−3 0 0.6 Figure 2. Maximum Forward Voltage IR, MAXIMUM REVERSE CURRENT (AMPS) Figure 1. Typical Forward Voltage 10E−9 0.4 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 65 85 105 125 145 165 0.7 0.6 Ipk/Io = p 0.5 dc SQUARE WAVE Ipk/Io = 5 0.4 Ipk/Io = 10 0.3 Ipk/Io = 20 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TL, LEAD TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 1.6 MBRM120ET1G, NRVBM120ET1G, MBRM120ET3G, NRVBM120ET3G 150 TJ = 25C TJ, DERATED OPERATING TEMPERATURE (_C) C, CAPACITANCE (pF) 1000 Rtja = 33.72C/W 51C/W 148 100 69C/W 83.53C/W 96C/W 146 10 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 144 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax − r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. http://onsemi.com 4 R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MBRM120ET1G, NRVBM120ET1G, MBRM120ET3G, NRVBM120ET3G 1.0 50% 0.1 20% 10% 5.0% 0.01 2.0% 1.0% R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.001 0.00001 Rtjl(t) = Rtjl*r(t) 0.0001 0.001 0.01 0.1 1.0 10 100 T, TIME (s) Figure 9. Thermal Response Junction to Lead 1.0 50% 0.1 20% 10% 5.0% 0.01 2.0% 1.0% 0.001 0.00001 Rtjl(t) = Rtjl*r(t) 0.0001 0.001 0.1 0.01 1.0 T, TIME (s) Figure 10. Thermal Response Junction to Ambient POWERMITE is a registered trademark of and used under a license from Microsemi Corporation. http://onsemi.com 5 10 100 1,000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS POWERMITE CASE 457 ISSUE G DATE 12 JAN 2022 SCALE 4:1 GENERIC MARKING DIAGRAMS* 1 M XXXG 2 1 STYLE 1 1 M XXXG 2 STYLE 2 M XXXG 2 XXX = Specific Device Code M = Date Code G = Pb−Free Package STYLE 3 DOCUMENT NUMBER: DESCRIPTION: STYLE 1: PIN 1. CATHODE 2. ANODE 98ASB14853C POWERMITE STYLE 2: PIN 1. ANODE OR CATHODE 2. CATHODE OR ANODE (BI−DIRECTIONAL) STYLE 3: PIN 1. ANODE 2. CATHODE *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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