MBRM120ET3

MBRM120E Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite has the same thermal performance as the SMA while being 50% smaller in footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry. Because of its small size, it is ideal for use in portable and battery powered products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are ac/dc and dc–dc converters, reverse battery protection, and “Oring” of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS ANODE CATHODE Features: • • • • • Low Profile – Maximum Height of 1.1 mm Small Footprint – Footprint Area of 8.45 mm2 Low VF Provides Higher Efficiency and Extends Battery Life Supplied in 12 mm Tape and Reel Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink POWERMITE CASE 457 PLASTIC MARKING DIAGRAM Mechanical Characteristics: • • • • • • M BCV Powermite is JEDEC Registered as DO–216AA Case: Molded Epoxy Epoxy Meets UL94V–0 at 1/8″ Weight: 62 mg (approximately) Device Marking: BCV Lead and Mounting Surface Temperature for Soldering Purposes. 260°C Maximum for 10 Seconds BCV M = Device Code = Date Code ORDERING INFORMATION Device MAXIMUM RATINGS Package MBRM120ET1 POWERMITE Please See the Table on the Following Page Shipping 3000/Tape & Reel MBRM120ET3 POWERMITE 12,000/Tape & Reel  Semiconductor Components Industries, LLC, 2001 November, 2001 – Rev. 0 1 Publication Order Number: MBRM120E/D MBRM120E MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 20 V IO 1.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 135°C) IFRM 2.0 A Non–Repetitive Peak Surge Current (Non–Repetitive peak surge current, halfwave, single phase, 60 Hz) IFSM 50 A Storage Temperature Tstg –65 to 150 °C TJ –65 to 150 °C dv/dt 10,000 V/
s Rtjl Rtjtab Rtja 35 23 277 °C/W Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 130°C) Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) THERMAL CHARACTERISTICS Thermal Resistance – Junction–to–Lead (Anode) (Note 1) Thermal Resistance – Junction–to–Tab (Cathode) (Note 1) Thermal Resistance – Junction–to–Ambient (Note 1) 1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 and 10. ELECTRICAL CHARACTERISTICS VF Maximum Instantaneous Forward Voltage (Note 2), See Figure 2 (IF = 0.1 A) (IF = 1.0 A) (IF = 2.0 A) IR Maximum Instantaneous Reverse Current (Note 2), See Figure 4 (VR = 20 V) (VR = 10 V) (VR = 5.0 V) 2. Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%. http://onsemi.com 2 TJ = 25°C TJ = 100°C 0.455 0.530 0.595 0.360 0.455 0.540 TJ = 25°C TJ = 100°C 10 1.0 0.5 1600 500 300 V
A iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) MBRM120E 10 TJ = 150°C TJ = 25°C TJ = 100°C TJ = –40°C 1.0 0.1 0.2 0.4 0.6 0.8 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10 TJ = 150°C TJ = 100°C 1.0 TJ = 25°C 0.1 0.2 0.6 0.8 Figure 2. Maximum Forward Voltage 100E–3 IR, MAXIMUM REVERSE CURRENT (AMPS) Figure 1. Typical Forward Voltage IR, REVERSE CURRENT (AMPS) 0.4 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100E–3 10E–3 1E–3 TJ = 150°C 100E–6 TJ = 100°C 1E–6 TJ = 25°C 5.0 10 1E–3 TJ = 100°C 10E–6 TJ = 25°C 1E–6 100E–9 10E–9 0 TJ = 150°C 100E–6 10E–6 100E–9 10E–3 20 15 10E–9 0 5.0 10 15 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current http://onsemi.com 3 20 FREQ = 20 kHz dc 1.6 PFO, AVERAGE DISSIPATION (WATTS) 1.8 1.4 SQUARE WAVE 1.2 1.0 Ipk/Io =  0.8 Ipk/Io = 5 0.6 Ipk/Io = 10 0.4 Ipk/Io = 20 0.2 0 25 45 65 85 105 125 145 dc 0.6 Ipk/Io =  SQUARE WAVE 0.5 Ipk/Io = 5 0.4 Ipk/Io = 10 0.3 Ipk/Io = 20 0.2 0.1 0 0 165 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation 1000 C, CAPACITANCE (pF) 0.7 TJ, DERATED OPERATING TEMPERATURE (
C) IO, AVERAGE FORWARD CURRENT (AMPS) MBRM120E 1.6 150 TJ = 25°C Rtja = 33.72°C/W 51°C/W 148 100 69°C/W 83.53°C/W 96°C/W 146 10 144 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax – r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax – r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. http://onsemi.com 4 R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MBRM120E 1.0 50% 20% 0.1 10% 5.0% 0.01 2.0% 1.0% Rtjl(t) = Rtjl*r(t) R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 T, TIME (s) Figure 9. Thermal Response Junction to Lead 1.0 50% 20% 0.1 10% 5.0% 0.01 2.0% 1.0% 0.001 0.00001 Rtjl(t) = Rtjl*r(t) 0.0001 0.001 0.01 0.1 1.0 10 T, TIME (s) Figure 10. Thermal Response Junction to Ambient 0.025 0.635 0.105 2.67 0.030 0.762 0.100 2.54 0.050 1.27 inches mm Minimum Recommended Footprint http://onsemi.com 5 100 1,000 MBRM120E PACKAGE DIMENSIONS POWERMITE PLASTIC PACKAGE CASE 457–04 ISSUE D F 0.08 (0.003) C –A– J M T B S TERM. 1 –B– K TERM. 2 R L J D H –T– 0.08 (0.003) M T B S C S http://onsemi.com 6 S C S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. DIM A B C D F H J K L R S MILLIMETERS INCHES MIN MAX MIN MAX 1.75 2.05 0.069 0.081 1.75 2.18 0.069 0.086 0.85 1.15 0.033 0.045 0.40 0.69 0.016 0.027 0.70 1.00 0.028 0.039 -0.05 +0.10 -0.002 +0.004 0.10 0.25 0.004 0.010 3.60 3.90 0.142 0.154 0.50 0.80 0.020 0.031 1.20 1.50 0.047 0.059 0.50 REF 0.019 REF MBRM120E Notes http://onsemi.com 7 MBRM120E POWERMITE is a registered trademark of and used under a license from MicroSemi Corporation. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 8 MBRM120E/D