MBRS1100T3G,
SBRS81100T3G,
MBRS190T3G,
SBRS8190T3G
Schottky Power Rectifier
www.onsemi.com
Surface Mount Power Package
Schottky Power Rectifiers employ the use of the Schottky Barrier
principle in a large area metal-to-silicon power diode. State-of-the-art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes, in
surface mount applications where compact size and weight are critical
to the system. These state-of-the-art devices have the following
features:
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
90, 100 VOLTS
SMB
CASE 403A
Features
•
•
•
•
•
•
•
•
Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
High Blocking Voltage − 100 Volts
175°C Operating Junction Temperature
Guardring for Stress Protection
AEC−Q101 Qualified and PPAP Capable
These are Pb−Free Devices
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
•
•
260°C Max. for 10 Seconds
Shipped in 12 mm Tape and Reel, 2,500 units per reel
Cathode Polarity Band
MARKING DIAGRAM
AYWW
B1xG
G
B1
x
= Device Code
= C for MBRS1100T3
9 for MBRS190T3
A
= Assembly Location**
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly code
may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2018 − Rev. 13
1
Publication Order Number:
MBRS1100T3/D
MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G
MAXIMUM RATINGS
Rating
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBRS190T3
MBRS1100T3
VRRM
VRWM
VR
Average Rectified Forward Current
TL = 163°C
TL = 148°C
IF(AV)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
Value
Unit
V
90
100
A
1.0
2.0
A
50
Operating Junction Temperature (Note 1)
Voltage Rate of Change
TJ
−65 to +175
°C
dv/dt
10
V/ns
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
RqJL
22
°C/W
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 A, TJ = 25°C)
VF
0.75
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
IR
Thermal Resistance − Junction−to−Lead (TL = 25°C)
ELECTRICAL CHARACTERISTICS
Characteristic
mA
0.5
5.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Marking
Package
Shipping†
MBRS1100T3G
B1C
SMB
(Pb−Free)
2500 / Tape & Reel
SBRS81100T3G*
B1C
SMB
(Pb−Free)
2500 / Tape & Reel
SBRS81100T3G−VF01*
B1C
SMB
(Pb−Free)
2500 / Tape & Reel
MBRS190T3G
B19
SMB
(Pb−Free)
2500 / Tape & Reel
SBRS8190T3G*
B19
SMB
(Pb−Free)
2500 / Tape & Reel
SBRS1100T3G
B19
SMB
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*SBRS8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
www.onsemi.com
2
MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G
1k
400
200
100
40
20
10
4
2
1
0.4
0.2
0.1
0.04
0.02
0.01
20
10
TJ = 150°C
5
2
100°C
1
0.5
25°C
0.2
0.1
0.05
0.02
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
TJ = 150°C
I R , REVERSE CURRENT ( μA)
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
TYPICAL ELECTRICAL CHARACTERISTICS
1
1.1 1.2 1.3
125°C
100°C
25°C
0
10
20
30
40
50
60
70
80
vF, INSTANTANEOUS VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current*
90
100
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
3.2
2.8
TJ = 100°C
2.4
2.0
SQUARE
WAVE
1.6
DC
1.2
0.8
0.4
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2.0
DC
1.5
1.0
SQUARE
WAVE
0.5
0
145
150
155
160
165
170
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
TL, LEAD TEMPERATURE (°C)
Figure 3. Power Dissipation
Figure 4. Current Derating, Lead
C, CAPACITANCE (pF)
PF(AV), AVERAGE POWER DISSIPATION (WATTS)
*The curves shown are typical for the highest voltage device in the voltage
grouping. Typical reverse current for lower voltage selections can be estimated
from these curves if VR is sufficient below rated VR.
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
NOTE: TYPICAL CAPACITANCE
NOTE: AT 0 V = 270 pF
0.1
0.2
0.5
1
2
5
10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
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3
50
100
175
180
MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
MIN
1.95
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.30
2.47
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.077
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.091
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.097
0.008
0.087
0.012
0.156
0.181
0.220
0.063
A
L
L1
A1
c
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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Sales Representative
MBRS1100T3/D
